| |
2N3928
2N3929
| NPN Transistor: 40v, 3a |
2N3931
| Screening Options Available = ;; Polarity = PNP ;; Package = TO39 (TO205AD) ;; Vceo = 180V ;; IC(cont) = 0.1A ;; HFE(min) = 100 ;; HFE(max) = - ;; @ Vce/ic = 10V / 1mA ;; FT = 40MHz ;; PD = 0.7W |
2N3945
| Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 50V ;; IC(cont) = 1A ;; HFE(min) = 40 ;; HFE(max) = 150 ;; @ Vce/ic = 10V / 150mA ;; FT = 60MHz ;; PD = 5W |
2N3946
| NPN Small Signal General Purpose Amplifier & Switch |
2N3947
| Screening Options Available = ;; Polarity = NPN ;; Package = TO18 (TO206AA) ;; Vceo = 40V ;; IC(cont) = 0.2A ;; HFE(min) = 100 ;; HFE(max) = - ;; @ Vce/ic = 10V / 1mA ;; FT = 300MHz ;; PD = 0.36W |
2N394A
2N395
| Alloy-junction Germanium Transistors |
2N3954
| N-channel Dual Silicon Junction Field-effect Transistor |
2N3954
| Description = Low Power Field Effect Transistor ;; Case Style = TO71 ;; Geometry = FN22.2 ;; Page Number = E42+E43 |
2N3954A
| Description = Low Power Field Effect Transistor ;; Case Style = TO-71 ;; Geometry = FN22.2 ;; BVGSS Min (V) = 50 ;; Cissmax (pF) = 4 ;; Vgss(off) Min (V) = 1.0 ;; Vgss(off) Max (V) = 4.5 ;; Ldssmin (mA) = 0.5 ;; Ldssmax (mA) = 5.00 ;; Yfsmin (µMhos) ... |
2N3955
| N-channel Dual Silicon Junction Field-effect Transistor |
2N3955
2N3955A
| Description = Low Power Field Effect Transistor ;; Case Style = TO71 ;; Geometry = FN22.2 ;; Page Number = E42+E43 |
2N3956
| N-channel Dual Silicon Junction Field-effect Transistor |
2N3956
| Description = Low Power Field Effect Transistor ;; Case Style = TO71 ;; Geometry = FN22.2 ;; Page Number = E42+E43 |
2N3957
| N-channel Dual Silicon Junction Field-effect Transistor |
2N3957
| Description = Low Power Field Effect Transistor ;; Case Style = TO71 ;; Geometry = FN22.2 ;; Page Number = E42+E43 |
2N3958
| N-channel Dual Silicon Junction Field-effect Transistor |
2N3958
| Description = Low Power Field Effect Transistor ;; Case Style = TO71 ;; Geometry = FN22.2 ;; Page Number = E42+E43 |
2N3958
| Tight Match |
2N396
| Alloy-junction Germanium Transistors |
2N3960
2N3960J
2N3960JV
2N3960JX
| Package = TO-18 ;; Level = Jantxv ;; Vceo (V) = 12 ;; Vcbo (V) = 20 ;; Vebo (V) = 4.5 ;; Ic (A) = 0.05 ;; Power (W) ta = 0.4 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 300 ;; VCE(sat) (V) = 0.20 |
2N3960UB
2N3960UBJ
2N3960UBJX
| Package = Cersot ;; Level = Jantxv ;; Vceo (V) = 12 ;; Vcbo (V) = 20 ;; Vebo (V) = 4.5 ;; Ic (A) = 0.05 ;; Power (W) ta = 0.4 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 300 ;; VCE(sat) (V) = 0.20 |
2N3960UB_02
2N3960_02
| Silicon NPN Transistor |
2N3962
| Screening Options Available = ;; Polarity = PNP ;; Package = TO18 (TO206AA) ;; Vceo = 60V ;; IC(cont) = 0.2A ;; HFE(min) = 100 ;; HFE(max) = 450 ;; @ Vce/ic = 5V / 1mA ;; FT = 40MHz ;; PD = 0.36W |
2N3962
| |
2N3962CSM
| Screening Options Available = ;; Polarity = PNP ;; Package = LCC1 ;; Vceo = 60V ;; IC(cont) = 0.2A ;; HFE(min) = 100 ;; HFE(max) = 450 ;; @ Vce/ic = 5V / 1mA ;; FT = 40MHz ;; PD = 0.36W |
2N3963
| Screening Options Available = ;; Polarity = PNP ;; Package = TO18 (TO206AA) ;; Vceo = 80V ;; IC(cont) = 0.2A ;; HFE(min) = 100 ;; HFE(max) = 450 ;; @ Vce/ic = 5V / 1mA ;; FT = 40MHz ;; PD = 0.36W |
2N3963CSM
| Screening Options Available = ;; Polarity = PNP ;; Package = LCC1 ;; Vceo = 80V ;; IC(cont) = 0.2A ;; HFE(min) = 100 ;; HFE(max) = 450 ;; @ Vce/ic = 5V / 1mA ;; FT = 40MHz ;; PD = 0.36W |
2N3964
| Screening Options Available = ;; Polarity = PNP ;; Package = TO18 (TO206AA) ;; Vceo = 45V ;; IC(cont) = 0.2A ;; HFE(min) = 250 ;; HFE(max) = 600 ;; @ Vce/ic = 5V / 1mA ;; FT = 40MHz ;; PD = 0.36W |
2N3964CSM
| Screening Options Available = ;; Polarity = PNP ;; Package = LCC1 ;; Vceo = 45V ;; IC(cont) = 0.2A ;; HFE(min) = 250 ;; HFE(max) = 600 ;; @ Vce/ic = 5V / 1mA ;; FT = 40MHz ;; PD = 0.36W |
2N3964DCSM
| Screening Options Available = ;; Polarity = PNP ;; Package = LCC2 (MO-041BB) ;; Vceo = 45V ;; IC(cont) = 0.2A ;; HFE(min) = 250 ;; HFE(max) = 600 ;; @ Vce/ic = 5V / 1mA ;; FT = 40MHz ;; PD = 0.36W |
2N3965
| Screening Options Available = ;; Polarity = PNP ;; Package = TO18 (TO206AA) ;; Vceo = 45V ;; IC(cont) = 0.2A ;; HFE(min) = 250 ;; HFE(max) = 600 ;; @ Vce/ic = 5V / 1mA ;; FT = 40MHz ;; PD = 0.36W |
2N3965CSM
| Screening Options Available = ;; Polarity = PNP ;; Package = LCC1 ;; Vceo = 45V ;; IC(cont) = 0.2A ;; HFE(min) = 250 ;; HFE(max) = 600 ;; @ Vce/ic = 5V / 1mA ;; FT = 40MHz ;; PD = 0.36W |
2N3966
2N3967
| Description = Low Power Field Effect Transistor ;; Case Style = TO72 ;; Geometry = FN2.5 ;; Page Number = E30+E31 |
2N3967A
| Description = Low Power Field Effect Transistor ;; Case Style = TO-72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 30 ;; Cissmax (pF) = 5.0 ;; Crssmax (pF) = 1.3 ;; Vgs(off) Min (V) = 2.0 ;; Vgs(off) Max (V) = 5.0 ;; Lgssmax (nA) = 0.10 ;; Ylsmin (... |
2N3968
2N3968A
| Description = Low Power Field Effect Transistor ;; Case Style = TO-72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 30 ;; Cissmax (pF) = 5.0 ;; Crssmax (pF) = 1.3 ;; Vgs(off) Min (V) = 0.5 ;; Vgs(off) Max (V) = 3.0 ;; Lgssmax (nA) = 0.10 ;; Ylsmin (... |
2N3969
2N3969A
| Description = Low Power Field Effect Transistor ;; Case Style = TO-72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 30 ;; Cissmax (pF) = 5.0 ;; Crssmax (pF) = 1.3 ;; Vgs(off) Min (V) = 0.3 ;; Vgs(off) Max (V) = 1.7 ;; Lgssmax (nA) = 0.10 ;; Ylsmin (... |
2N396A
2N397
| Alloy-junction Germanium Transistors |
2N3970
2N3971
2N3972
| Description = Low Power Field Effect Transistor ;; Case Style = TO18 ;; Geometry = FN7.1 ;; Page Number = E36+E37 |
2n398
| |
2N3980
| Silicon Annular PN Unijunction Transister |
2n398a
2n398b
| |
2N3993
| P-channel Silicon Junction Field-effect Transistor |
2N3993
| Description = Low Power Field Effect Transistor ;; Case Style = TO72 ;; Geometry = FP7.3 ;; Page Number = E54+E55 |
2N3993A
| P-channel Silicon Junction Field-effect Transistor |
2N3993A
| Description = Low Power Field Effect Transistor ;; Case Style (TO-) = 72 ;; Geometry = FP7.3 ;; BVGSS Min (V) = 25 ;; Ciss Max (pF) = 12 ;; Vgs(off) Min (V) = 4.0 ;; Vgs(off) Max (V) = 9.50 ;; LGSS or Idgo Max (nA) = 1.2 ;; Idss Min (mA) = 10.00 ;; I... |
2N3994
| P-channel Silicon Junction Field-effect Transistor |
2N3994
| Description = Low Power Field Effect Transistor ;; Case Style = TO72 ;; Geometry = FP7.3 ;; Page Number = E54+E55 |
2N3994A
| P-channel Silicon Junction Field-effect Transistor |
2N3994A
| Description = Low Power Field Effect Transistor ;; Case Style (TO-) = 72 ;; Geometry = FP7.3 ;; BVGSS Min (V) = 25 ;; Ciss Max (pF) = 12 ;; Vgs(off) Min (V) = 1.0 ;; Vgs(off) Max (V) = 5.50 ;; LGSS or Idgo Max (nA) = 1.2 ;; Idss Min (mA) = 2.00 ;; Id... |
2N3996
| NPN Transistor, Package : TO-111_ISO |
2N3996
| Package = ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 100 ;; Vebo (V) = 8.0 ;; Ic (A) = 5.00 ;; Power (W) ta = 2 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 120 ;; VCE(sat) (V) = 0.25 |
2N3996
2N3996
| |
2N3996J
| Package = ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 100 ;; Vebo (V) = 8.0 ;; Ic (A) = 5.00 ;; Power (W) ta = 2 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 120 ;; VCE(sat) (V) = 0.25 |
2N3996JANTXTXV
| Mil-s- 19500/ = 374 ;; Vcbo Volts = 100 ;; Vceo Volts = 80 ;; Ic (CONT.) Amps = 5.0 ;; Power (@TC =25 C) Watts = 30 ;; = ;; Case Type = TO-111/I ;; Chip Type = 184 |
2N3996JV
2N3996JX
| Package = ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 100 ;; Vebo (V) = 8.0 ;; Ic (A) = 5.00 ;; Power (W) ta = 2 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 120 ;; VCE(sat) (V) = 0.25 |
2N3996SMD
| Screening Options Available = ;; Polarity = NPN ;; Package = SMD1 (TO276AB) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 40 ;; HFE(max) = 120 ;; @ Vce/ic = 2V / 1A ;; FT = 40MHz ;; PD = 30W |
2N3996SMD05
| Screening Options Available = ;; Polarity = NPN ;; Package = SMD0.5 (TO276AA) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 40 ;; HFE(max) = 120 ;; @ Vce/ic = 2V / 1A ;; FT = 40MHz ;; PD = 20W |
2N3997
| NPN Transistor, Package : TO-111_ISO |
2N3997
| Package = ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 100 ;; Vebo (V) = 8.0 ;; Ic (A) = 5.00 ;; Power (W) ta = 2 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 240 ;; VCE(sat) (V) = 0.25 |
2N3997
2N3997
| |
2N3997J
| Package = ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 100 ;; Vebo (V) = 8.0 ;; Ic (A) = 5.00 ;; Power (W) ta = 2 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 240 ;; VCE(sat) (V) = 0.25 |
2N3997JANTXTXV
| Mil-s- 19500/ = 374 ;; Vcbo Volts = 100 ;; Vceo Volts = 80 ;; Ic (CONT.) Amps = 5.0 ;; Power (@TC =25 C) Watts = 30 ;; = ;; Case Type = TO-111/I ;; Chip Type = 184 |
2N3997JV
2N3997JX
| Package = ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 100 ;; Vebo (V) = 8.0 ;; Ic (A) = 5.00 ;; Power (W) ta = 2 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 240 ;; VCE(sat) (V) = 0.25 |
2N3997SMD
| Screening Options Available = ;; Polarity = NPN ;; Package = SMD1 (TO276AB) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 80 ;; HFE(max) = 240 ;; @ Vce/ic = 2V / 1A ;; FT = 40MHz ;; PD = 30W |
2N3997SMD05
| Screening Options Available = ;; Polarity = NPN ;; Package = SMD0.5 (TO276AA) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 80 ;; HFE(max) = 240 ;; @ Vce/ic = 2V / 1A ;; FT = 40MHz ;; PD = 20W |
2N3998
| NPN Transistor, Package : TO-111 |
2N3998
| Package = ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 100 ;; Vebo (V) = 8.0 ;; Ic (A) = 5.00 ;; Power (W) ta = 2 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 120 ;; VCE(sat) (V) = 0.25 |
2N3998
2N3998
| |
2N3998J
| Package = ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 100 ;; Vebo (V) = 8.0 ;; Ic (A) = 5.00 ;; Power (W) ta = 2 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 120 ;; VCE(sat) (V) = 0.25 |
2N3998JANTXTXV
| Mil-s- 19500/ = 374 ;; Vcbo Volts = 100 ;; Vceo Volts = 80 ;; Ic (CONT.) Amps = 5.0 ;; Power (@TC =25 C) Watts = 30 ;; = ;; Case Type = TO-111 ;; Chip Type = 184 |
2N3998JV
2N3998JX
| Package = ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 100 ;; Vebo (V) = 8.0 ;; Ic (A) = 5.00 ;; Power (W) ta = 2 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 120 ;; VCE(sat) (V) = 0.25 |
2N3998SMD
| Screening Options Available = ;; Polarity = NPN ;; Package = SMD1 (TO276AB) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 40 ;; HFE(max) = 120 ;; @ Vce/ic = 2V / 1A ;; FT = 40MHz ;; PD = 30W |
2N3998SMD05
| Screening Options Available = ;; Polarity = NPN ;; Package = SMD0.5 (TO276AA) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 40 ;; HFE(max) = 120 ;; @ Vce/ic = 2V / 1A ;; FT = 40MHz ;; PD = 20W |
2N3998_02
| Silicon NPN Transistor |
2N3999
| NPN Transistor, Package : TO-111 |
2N3999
| Package = ;; Level = Jantxv ;; Vceo (V) = 80 ;; Vcbo (V) = 100 ;; Vebo (V) = 8.0 ;; Ic (A) = 5.00 ;; Power (W) ta = 2 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 240 ;; VCE(sat) (V) = 0.25 |
2N3999
2N3999
| |
