2N6474
| |
2N6475
| IC(A) = 4, VCBO(V) = 110, VCEO(V) = 100, PD(W) = 40, Package = TO-220, HFE(Min/Max) = 15/150, IC/VCE(A/V) = 1.5/4.0, VCE(SAT)(V) = 1.2, ic / IB(A/mA) = 1.5/150 |
2N6475
| 110 V, Epitaxial-base PNP Selicon Versawatt Transistor |
2N6475
| |
2N6476
| PNP Transistor: 120v, 4a |
2N6476
| IC(A) = 4, VCBO(V) = 130, VCEO(V) = 120, PD(W) = 40, Package = TO-220, HFE(Min/Max) = 15/150, IC/VCE(A/V) = 1.5/4.0, VCE(SAT)(V) = 1.2, ic / IB(A/mA) = 1.5/150 |
2N6476
| 130 V, Epitaxial-base PNP Selicon Versawatt Transistor |
2N6476
| |
2N6477
| IC(A) = 2.5, VCBO(V) = 140, VCEO(V) = 130, PD(W) = 50, Package = TO-220, HFE(Min/Max) = 25/150, IC/VCE(A/V) = 1.0/4.0, VCE(SAT)(V) = 1.0, ic / IB(A/mA) = 1.0/100 |
2N6477
| Silicon NPN Power Transistors |
2N6478
| IC(A) = 2.5, VCBO(V) = 160, VCEO(V) = 150, PD(W) = 50, Package = TO-220, HFE(Min/Max) = 25/150, IC/VCE(A/V) = 1.0/4.0, VCE(SAT)(V) = 1.0, ic / IB(A/mA) = 1.0/100 |
2N6478
| Silicon NPN Power Transistors |
2N6483
2N6484
| Description = Low Power Field Effect Transistor ;; Case Style = TO-71 ;; Geometry = FN22.2 ;; BVGSS Min (V) = 50 ;; Cissmax (pF) = 20 ;; Vgss(off) Min (V) = 0.7 ;; Vgss(off) Max (V) = 4.0 ;; Ldssmin (mA) = 0.5 ;; Ldssmax (mA) = 7.5 ;; Yfsmin (µMhos) ... |
2N6486
| NPN Transistor: 40v, 15a |
2N6486
| IC(A) = 15, VCBO(V) = 50, VCEO(V) = 40, PD(W) = 75, Package = TO-220, HFE(Min/Max) = 20/150, IC/VCE(A/V) = 5.0/4.0, VCE(SAT)(V) = 1.3, ic / IB(A/mA) = 5.0/500 |
2N6486
| 40 V, NPN Plastic Power Transistor |
2N6486
| |
2N6487
| NPN Transistor: 60v, 15a |
2N6487
| IC(A) = 15, VCBO(V) = 70, VCEO(V) = 60, PD(W) = 75, Package = TO-220, HFE(Min/Max) = 20/150, IC/VCE(A/V) = 5.0/4.0, VCE(SAT)(V) = 1.3, ic / IB(A/mA) = 5.0/500 |
2N6487
| Power 15A 80V Discrete NPN , Package: TO-220, Pins=3 |
2N6487
| Complementary Silicon Power Transistors |
2N6487
| 60 V, NPN Plastic Power Transistor |
2N6487
| |
2N6488
| NPN Transistor: 80v, 15a |
2N6488
| IC(A) = 15, VCBO(V) = 90, VCEO(V) = 80, PD(W) = 75, Package = TO-220, HFE(Min/Max) = 20/150, IC/VCE(A/V) = 5.0/4.0, VCE(SAT)(V) = 1.3, ic / IB(A/mA) = 5.0/500 |
2N6488
| Power 15A 80V Discrete NPN , Package: TO-220, Pins=3 |
2N6488
| Complementary Silicon Power Transistors |
2N6488
| 80 V, NPN Plastic Power Transistor |
2N6488
| |
2N6489
| PNP Transistor: 40v, 15a |
2N6489
| IC(A) = 15, VCBO(V) = 50, VCEO(V) = 40, PD(W) = 75, Package = TO-220, HFE(Min/Max) = 20/150, IC/VCE(A/V) = 5.0/4.0, VCE(SAT)(V) = 1.3, ic / IB(A/mA) = 5.0/500 |
2N6489
| Complementary Silicon Power Transistor |
2N6489
| 40 V, PNP Plastic Power Transistor |
2N6489
| |
2N6490
| PNP Transistor: 60v, 15a |
2N6490
| IC(A) = 15, VCBO(V) = 70, VCEO(V) = 60, PD(W) = 75, Package = TO-220, HFE(Min/Max) = 20/150, IC/VCE(A/V) = 5.0/4.0, VCE(SAT)(V) = 1.3, ic / IB(A/mA) = 5.0/500 |
2N6490
| Bipolar Power TO220 PNP 15A 60V, Package: TO-220, Pins=3 |
2N6490
| Complementary Silicon Power Transistors |
2N6490
| 60 V, PNP Plastic Power Transistor |
2N6490
| |
2N6491
| PNP Transistor: 80v, 15a |
2N6491
| IC(A) = 15, VCBO(V) = 90, VCEO(V) = 80, PD(W) = 75, Package = TO-220, HFE(Min/Max) = 20/150, IC/VCE(A/V) = 5.0/4.0, VCE(SAT)(V) = 1.3, ic / IB(A/mA) = 5.0/500 |
2N6491
| Power 15A 80V Discrete PNP , Package: TO-220, Pins=3 |
2N6491
| 80 V, PNP Plastic Power Transistor |
2N6491
| |
2N6492
2N6493
| Silicon NPN Power Transistors |
2N6494
| PNP Silicon Power Transistor |
2N6495
| NPN Transistor: 80v, 10a |
2N6495
| Description = Low Power Field Effect Transistor ;; Case Style = TO-71 ;; Geometry = FN22.2 ;; BVGSS Min (V) = 50 ;; Cissmax (pF) = 20 ;; Vgss(off) Min (V) = 0.7 ;; Vgss(off) Max (V) = 4.0 ;; Ldssmin (mA) = 0.5 ;; Ldssmax (mA) = 7.5 ;; Yfsmin (µMhos) ... |
2N6496
| NPN Transistor: 110v, 15a |
2N6496
| Silicon NPN Power Transistors |
2N6496-TO257
| Screening Options Available = ;; Polarity = NPN ;; Package = TO257AA ;; Vceo = 110V ;; IC(cont) = 15A ;; HFE(min) = 12 ;; HFE(max) = 100 ;; @ Vce/ic = 2V / 8A ;; FT = 60MHz ;; PD = 80W |
2N6497
| IC(A) = 5, VCBO(V) = 350, VCEO(V) = 250, PD(W) = 80, Package = TO-220, HFE(Min/Max) = 10/75, IC/VCE(A/V) = 2.5/10, VCE(SAT)(V) = 1.0, ic / IB(A/mA) = 2.5/500 |
2N6497
| Power 5A 250V Discrete NPN , Package: TO-220, Pins=3 |
2N6497
| 250 V, NPN Silicon Power Transistor |
2N6497
| |
2N6498
| IC(A) = 5, VCBO(V) = 400, VCEO(V) = 300, PD(W) = 80, Package = TO-220, HFE(Min/Max) = 10/75, IC/VCE(A/V) = 2.5/10, VCE(SAT)(V) = 1.25, ic / IB(A/mA) = 2.5/500 |
2N6498
| 5 Ampere Power Transistor NPN Silicon |
2N6498
| 300 V, NPN Silicon Power Transistor |
2N6498
| |
2N6499
| IC(A) = 5, VCBO(V) = 450, VCEO(V) = 350, PD(W) = 80, Package = TO-220, HFE(Min/Max) = 10/75, IC/VCE(A/V) = 2.5/10, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 2.5/500 |
2N6499
| 350 V, NPN Silicon Power Transistor |
2N6499
| |
2N650
| Alloy-junction Germanium Transistors |
2N6500
| PNP Transistor: 90v, 4a |
2N6500
| Screening Options Available = ;; Polarity = NPN ;; Package = TO66 (TO213AA) ;; Vceo = 110V ;; IC(cont) = 4A ;; HFE(min) = 15 ;; HFE(max) = 60 ;; @ Vce/ic = 2V / 3A ;; FT = 60MHz ;; PD = 20W |
2N6502
| Silicon DUAL Differntial Amplifier Transistors |
2N6504
| Silicon Controlled Rectifiers , Package: TO-220, Pins=3 |
2N6504G
| Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 Amperes RMS 50 thru 800 Volts |
2N6504Series
| Silicon Controlled Rectifiers , Package: TO-220, Pins=3 |
2N6504thru2N6509
| Thyristors |
2N6504_06
| Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 Amperes RMS 50 thru 800 Volts |
2N6505
| Silicon Controlled Rectifiers , Package: TO-220, Pins=3 |
2N6505G
| Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 Amperes RMS 50 thru 800 Volts |
2N6505T
| Silicon Controlled Rectifiers , Package: TO-220, Pins=3 |
2N6505TG
| Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 Amperes RMS 50 thru 800 Volts |
2N6507
| Silicon Controlled Rectifiers , Package: TO-220, Pins=3 |
2N6507G
| Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 Amperes RMS 50 thru 800 Volts |
2N6507T
| Silicon Controlled Rectifiers , Package: TO-220, Pins=3 |
2N6507TG
| Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 Amperes RMS 50 thru 800 Volts |
2N6508
| Silicon Controlled Rectifiers , Package: TO-220, Pins=3 |
2N6508G
| Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 Amperes RMS 50 thru 800 Volts |
2N6508T
2N6509
| Silicon Controlled Rectifiers , Package: TO-220, Pins=3 |
2N6509G
| Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 Amperes RMS 50 thru 800 Volts |
2N6509T
| Silicon Controlled Rectifier, Package: TO-220, Pins=3 |
2N6509TG
| Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 Amperes RMS 50 thru 800 Volts |
2N650A
| Alloy-junction Germanium Transistors |
2n651
| |
2N6510
| NPN Transistor: 200v, 7a |
2N6510
| Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 200V ;; IC(cont) = 7A ;; HFE(min) = 10 ;; HFE(max) = 50 ;; @ Vce/ic = 3V / 3A ;; FT = 3MHz ;; PD = 120W |
2N6511
| NPN Transistor: 250v, 7a |
2N6511
| Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 250V ;; IC(cont) = 7A ;; HFE(min) = 10 ;; HFE(max) = 50 ;; @ Vce/ic = 3V / 4A ;; FT = 3MHz ;; PD = 120W |
2N6512
| NPN Transistor: 300v, 7a |
2N6512
| Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 300V ;; IC(cont) = 7A ;; HFE(min) = 10 ;; HFE(max) = 50 ;; @ Vce/ic = 3V / 4A ;; FT = 3MHz ;; PD = 120W |
2N6513
| NPN Transistor: 350v, 7a |
2N6513
| Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 350V ;; IC(cont) = 7A ;; HFE(min) = 10 ;; HFE(max) = 50 ;; @ Vce/ic = 3V / 4A ;; FT = 3MHz ;; PD = 120W |
2N6514
| NPN Transistor: 300v, 7a |
