Semiconductors list from BD241A_00 to BD249A



BD241A_00
BD241A_07
NPN Power Transistors
BD241B
NPN Epitaxial Silicon Transistor
BD241B
IC(A) = 3, VCBO(V) = 90, VCEO(V) = 80, PD(W) = 40, Package = TO-220, HFE(Min/Max) = 10, IC/VCE(A/V) = 3.0/4.0, VCE(SAT)(V) = 1.2, ic / IB(A/mA) = 3.0/600
BD241B
NPN Silicon Power Transistors
BD241B
Complementary Silicon Power Transistors
BD241B
BD241BFI
BD241BFP
BD241BFP_01
Complementary Silicon Power Transistors
BD241C
NPN Epitaxial Silicon Transistor
BD241C
IC(A) = 3, VCBO(V) = 115, VCEO(V) = 100, PD(W) = 40, Package = TO-220, HFE(Min/Max) = 10, IC/VCE(A/V) = 3.0/4.0, VCE(SAT)(V) = 1.2, ic / IB(A/mA) = 3.0/600
BD241C
Power 3A 100V NPN 40W , Package: TO-220, Pins=3
BD241C
NPN Silicon Power Transistors
BD241C
Complementary Silicon Power Transistors
BD241C
ic (mA) = 3 ;; VCBO(V) = 100 ;; VCEO(V) = 115
BD241CFP
BD241D
BD241E
BD241F
NPN Silicon Power Transistors
BD242
PNP Epitaxial Silicon Transistor
BD242
IC(A) = 3, VCBO(V) = 55, VCEO(V) = 45, PD(W) = 40, Package = TO-220, HFE(Min/Max) = 10, IC/VCE(A/V) = 3.0/4.0, VCE(SAT)(V) = 1.2, ic / IB(A/mA) = 3.0/600
BD242
PNP Silicon Power Transistors
BD242
BD2425J50200A00
BD2425J5050A00
Ultra Low Profile 0805 Balun 50¥Ø to 50¥Ø Balanced
BD2425N50100A00
BD2425N50200A00
BD2425N5075A00
BD2425N5075A50
BD2425N50ATI
BD2425NNRFA00
Ultra Low Profile 0404 Balun For Nrf24l01 and Nrf24l01+
BD2425P50100A00
Nano Profile 0404 Balun 50¥Ø to 100¥ø Balanced
BD242A
PNP Epitaxial Silicon Transistor
BD242A
IC(A) = 3, VCBO(V) = 70, VCEO(V) = 60, PD(W) = 40, Package = TO-220, HFE(Min/Max) = 10, IC/VCE(A/V) = 3.0/4.0, VCE(SAT)(V) = 1.2, ic / IB(A/mA) = 3.0/600
BD242A
PNP Silicon Power Transistors
BD242A
Complementary Silicon Power Transistors
BD242A
BD242B
PNP Epitaxial Silicon Transistor
BD242B
IC(A) = 3, VCBO(V) = 90, VCEO(V) = 80, PD(W) = 40, Package = TO-220, HFE(Min/Max) = 10, IC/VCE(A/V) = 3.0/4.0, VCE(SAT)(V) = 1.2, ic / IB(A/mA) = 3.0/600
BD242B
Power 3A 80V PNP , Package: TO-220, Pins=3
BD242B
PNP Silicon Power Transistors
BD242B
Complementary Silicon Power Transistors
BD242B
BD242BFI
BD242BFP
Complementary Silicon Power Transistors
BD242C
PNP Epitaxial Silicon Transistor
BD242C
IC(A) = 3, VCBO(V) = 115, VCEO(V) = 100, PD(W) = 40, Package = TO-220, HFE(Min/Max) = 10, IC/VCE(A/V) = 3.0/4.0, VCE(SAT)(V) = 1.2, ic / IB(A/mA) = 3.0/600
BD242C
Power 3A 100V PNP , Package: TO-220, Pins=3
BD242C
PNP Silicon Power Transistors
BD242C
Complementary Silicon Power Transistors
BD242C
ic (mA) = 3 ;; VCBO(V) = 115 ;; VCEO(V) = 100
BD243
NPN Epitaxial Silicon Transistor
BD243
IC(A) = 6, VCBO(V) = 55, VCEO(V) = 45, PD(W) = 65, Package = TO-220, HFE(Min/Max) = 15, IC/VCE(A/V) = 3.0/4.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 6.0/1A
BD243
NPN Silicon Power Transistors
BD243
Description = NPN Epitaxial Silicon Transistor ;; Package = TO-220
BD243A
NPN Epitaxial Silicon Transistor
BD243A
IC(A) = 6, VCBO(V) = 70, VCEO(V) = 60, PD(W) = 65, Package = TO-220, HFE(Min/Max) = 15, IC/VCE(A/V) = 3.0/4.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 6.0/1A
BD243A
NPN Silicon Power Transistors
BD243B
NPN Epitaxial Silicon Transistor
BD243B
IC(A) = 6, VCBO(V) = 90, VCEO(V) = 80, PD(W) = 65, Package = TO-220, HFE(Min/Max) = 15, IC/VCE(A/V) = 3.0/4.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 6.0/1A
BD243B
Power 6A 80V NPN , Package: TO-220, Pins=3
BD243B
NPN Silicon Power Transistors
BD243B
Complementary Silicon Power Transistors
BD243C
NPN Epitaxial Silicon Transistor
BD243C
IC(A) = 6, VCBO(V) = 115, VCEO(V) = 100, PD(W) = 65, Package = TO-220, HFE(Min/Max) = 15, IC/VCE(A/V) = 3.0/4.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 6.0/1A
BD243C
Power 6A 100V NPN , Package: TO-220, Pins=3
BD243C
NPN Silicon Power Transistors
BD243C
Complementary Silicon Power Transistors
BD243C
ic (mA) = 6 ;; VCBO(V) = 100 ;; VCEO(V) = 100
BD243C_07
Complementary Power Transistors
BD244
PNP Epitaxial Silicon Transistor
BD244
IC(A) = 6, VCBO(V) = 55, VCEO(V) = 45, PD(W) = 65, Package = TO-220, HFE(Min/Max) = 15, IC/VCE(A/V) = 3.0/4.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 6.0/1A
BD244
PNP Silicon Power Transistors
BD244A
PNP Epitaxial Silicon Transistor
BD244A
IC(A) = 6, VCBO(V) = 70, VCEO(V) = 60, PD(W) = 65, Package = TO-220, HFE(Min/Max) = 15, IC/VCE(A/V) = 3.0/4.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 6.0/1A
BD244A
PNP Silicon Power Transistors
BD244B
PNP Epitaxial Silicon Transistor
BD244B
IC(A) = 6, VCBO(V) = 90, VCEO(V) = 80, PD(W) = 65, Package = TO-220, HFE(Min/Max) = 15, IC/VCE(A/V) = 3.0/4.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 6.0/1A
BD244B
Bipolar Power TO220 PNP 6A 80V, Package: TO-220, Pins=3
BD244B
PNP Silicon Power Transistors
BD244B
Complementary Silicon Power Transistors
BD244C
PNP Epitaxial Silicon Transistor
BD244C
IC(A) = 6, VCBO(V) = 115, VCEO(V) = 100, PD(W) = 65, Package = TO-220, HFE(Min/Max) = 15, IC/VCE(A/V) = 3.0/4.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 6.0/1A
BD244C
Power 6A 100V PNP , Package: TO-220, Pins=3
BD244C
PNP Silicon Power Transistors
BD244C
Complementary Silicon Power Transistors
BD244C
ic (mA) = 6 ;; VCBO(V) = 100 ;; VCEO(V) = 100
BD245
BD245A
BD245B
BD245C
NPN Silicon Power Transistors
BD246
BD246A
BD246B
BD246C
PNP Silicon Power Transistors
BD249
IC(A) = 25, VCBO(V) = 55, VCEO(V) = 45, PD(W) = 125, Package = TO-3P, HFE(Min/Max) = 10, IC/VCE(A/V) = 15/4.0, VCE(SAT)(V) = 1.8, ic / IB(A/mA) = 15/1.5A
BD249
NPN Silicon Power Transistors
BD249A
IC(A) = 25, VCBO(V) = 70, VCEO(V) = 60, PD(W) = 125, Package = TO-3P, HFE(Min/Max) = 10, IC/VCE(A/V) = 15/4.0, VCE(SAT)(V) = 1.8, ic / IB(A/mA) = 15/1.5A
BD249A
NPN Silicon Power Transistors
 
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