BLB-5428I-YG
BLB-6464I-YG
BLB-6519I-YG
BLB-6718I-YG
BLB-7067F-W
BLB-8021I-YG
BLB-9021Q-SUG
BLB-9334A-YG
| |
BLB101MGC-12V-P
BLB101MGC-28V-P
BLB101MGC-6V-P
| Material: Ingaalp , Wavelength: 568nm |
BLB101SURC-E-6V
| 10mm Bayonet Based LED LAMP |
BLB101SURC-E-6V-P
| 10 MM Bayonet Based Led Lamp. Hyper Red (peak Wavelength 540 Nm). |
BLB101SURC-E12V
BLB101SURC-E28V
| 10mm Bayonet Based LED LAMP |
BLB101SURC/E-6V
BLB101SURC/E12V
BLB101SURC/E28V
| Material: Ingaalp , Wavelength: 630nm |
BLB101SYC-12V-P
BLB101SYC-28V-P
BLB101SYC-6V-P
| Material: Ingaalp , Wavelength: 588nm |
BLB102MGC-12V-P
BLB102MGC-28V-P
BLB102MGC-6V-P
| Material: Ingaalp , Wavelength: 568nm |
BLB102SURC-E-6V
BLB102SURC-E12V
BLB102SURC-E28V
| 10mm Bayonet Based LED LAMP |
BLB102SURC/E-6V
BLB102SURC/E12V
BLB102SURC/E28V
| Material: Ingaalp , Wavelength: 630nm |
BLB102SYC-12V-P
BLB102SYC-28V-P
BLB102SYC-6V-P
| Material: Ingaalp , Wavelength: 588nm |
BLC149
| Blc149 |
BLC210
BLC210HP
| Inverter Transformers |
BLC573
| HF / VHF Power Ldmos Transistor |
BLC6G10-160
| UHF Power Ldmos Transistor |
BLC6G10-200
| UHF power LDMOS transistor 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. |
BLC6G10LS-160
BLC6G10LS-200
| UHF Power Ldmos Transistor |
BLC6G20-110
| UHF power LDMOS transistor
110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport... |
BLC6G20-140
| UHF power LDMOS transistor
140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport... |
BLC6G20-75
| UHF power LDMOS transistor
75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport ... |
BLC6G20LS-110
| UHF power LDMOS transistor
110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport... |
BLC6G20LS-140
| UHF power LDMOS transistor
140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport... |
BLC6G20LS-75
| UHF power LDMOS transistor
75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport ... |
BLC6G22-100
| UHF power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport... |
BLC6G22-130
| UHF power LDMOS transistor
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transpor... |
BLC6G22-75
| Power LDMOS Transistor
75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and han... |
BLC6G22LS-100
| UHF power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport... |
BLC6G22LS-130
| UHF power LDMOS transistor
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transpor... |
BLC6G22LS-75
| Power LDMOS Transistor
75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and han... |
BLD6G22L-50
| W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor
The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station ... |
BLE112
| BLE112, Bluetooth low energy module is a single mode device targeted for low power sensors and accessories. BLE112 offers all Bluetooth low energy features: radio, stack, profiles and application space for customer applications, so external processor... |
BLF.500
BLF001.
BLF002.
BLF003.
BLF004.
BLF005.
BLF006.
BLF007.
BLF008.
BLF009.
BLF010.
BLF012.
BLF015.
BLF020.
BLF025.
BLF030.
| Axial Lead and Cartridge Fuses |
BLF041MGC-12V-P
BLF041MGC-28V-P
BLF041MGC-6V-P
| Material: Ingaalp , Wavelength: 568nm |
BLF041SURC-E-6V
BLF041SURC-E12V
BLF041SURC-E28V
| 4mm Flange Based LED LAMP |
BLF041SURC/E-6V
BLF041SURC/E12V
BLF041SURC/E28V
| Material: Ingaalp , Wavelength: 630nm |
BLF041SYC-12V-P
BLF041SYC-28V-P
BLF041SYC-6V-P
| Material: Ingaalp , Wavelength: 588nm |
BLF051MGC-12V-P
BLF051MGC-28V-P
BLF051MGC-6V-P
| Material: Ingaalp , Wavelength: 568nm |
BLF051SURC-E-6V
BLF051SURC-E12V
BLF051SURC-E28V
| 5mm Flange Based LED LAMP |
BLF051SURC/E-6V
BLF051SURC/E12V
BLF051SURC/E28V
| Material: Ingaalp , Wavelength: 630nm |
BLF051SYC-12V-P
BLF051SYC-28V-P
BLF051SYC-6V-P
| Material: Ingaalp , Wavelength: 588nm |
BLF052MGC-12V-P
BLF052MGC-28V-P
BLF052MGC-6V-P
| Material: Ingaalp , Wavelength: 568nm |
BLF052SURC-E-6V
BLF052SURC-E12V
| 5mm Flange Based LED LAMP |
