Part number:K4S1G0732B-TC75
Function:Memory, DRAM, DDR SDRAM, 1 Gb
Description:32M x 8Bit x 4 Banks Synchronous DRAM The K4S1G0732B is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Company name:Samsung Semiconductor, Inc.
Datasheet:Download K4S1G0732B-TC75 datasheet
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