Part number:K4S56323LF-F(H)E/N/S/C/L/R60
Function:Memory, DRAM, SDR SDRAM, 256 Mb
Description:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.
Company name:Samsung Semiconductor, Inc.
Datasheet:Download K4S56323LF-F(H)E/N/S/C/L/R60 datasheet
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