FDB2504M/W
FDB2504MT
FDB2504MW
FDB2504P
FDB2504P/T
FDB2504P/W
FDB2504PT
FDB2504PW
FDB2504W
FDB2506
FDB2506/T
FDB2506/W
FDB2506M/T
FDB2506M/W
FDB2506MT
FDB2506MW
FDB2506P
FDB2506P/T
FDB2506P/W
FDB2506PT
FDB2506PW
FDB2506W
FDB2508
FDB2508/T
FDB2508/W
FDB2508M/T
FDB2508M/W
FDB2508MT
FDB2508MW
FDB2508P
FDB2508P/T
FDB2508P/W
FDB2508PT
FDB2508PW
FDB2508W
FDB2510
FDB2510/T
FDB2510/W
FDB2510M/T
FDB2510M/W
FDB2510MT
FDB2510MW
FDB2510P
FDB2510P/T
FDB2510P/W
FDB2510PT
FDB2510PW
FDB2510W
| |
FDB2532
| FDB2532 - Discrete Commercial N-channel UltraFET Trench MOSFET, 150V, 79A, 0.016 Ohms @ VGS = 10 V, TO263/D2PAK Package |
FDB2552
| FDB2552 - Discrete Commercial N-channel UltraFET Trench MOSFET, 150V, 37A, 0.036 Ohms @ VGS = 10V, TO-263/D2PAK Package |
FDB2570
| 150V N-channel Powertrench MOSFET |
FDB2572
| FDB2572 - Discrete Commercial N-channel UltraFET Trench MOSFET, 150V, 29A, 0.056 Ohms @ VGS = 10V, TO-263/D2PAK Package |
FDB2614
| This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. |
FDB2670
| 200V N-channel Powertrench MOSFET |
FDB2710
| This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
# 50A, 250V, RDS(on) = 36.3mΩ... |
FDB28N30
FDB28N30TM
| N-channel Mosfet |
FDB300
FDB300-FDB310
FDB301
FDB302
FDB304
FDB306
FDB308
FDB310
| |
FDB33N25
FDB33N25TM
FDB33N25_06
| 250V N-channel Mosfet |
FDB3500
FDB3500-FDB3510
FDB3500/T
FDB3500/W
FDB3500M/T
FDB3500M/W
FDB3500MT
FDB3500P
FDB3500P-FDB3510P
FDB3500P/T
FDB3500P/W
FDB3500PT
FDB3500PW
FDB3500W
FDB3501
FDB3501/T
FDB3501/W
FDB3501M/T
FDB3501M/W
FDB3501MT
FDB3501MW
FDB3501P
FDB3501P/T
FDB3501P/W
FDB3501PT
FDB3501PW
FDB3501W
FDB3502
FDB3502/T
FDB3502/W
FDB3502M/T
FDB3502M/W
| |
