Semiconductors list from FGA15N120ANTD to FGL60N170D



FGA15N120ANTD
FGA15N120ANTD_1
1200v NPT Trench IGBT
FGA15N120ANTU
Discrete, NPT Igbt
FGA15N120FTD
1200V, 15A Field Stop Trench IGBT Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggeness. This device is desi...
FGA180N30D
FGA180N33AT
FGA180N33ATD
330v, 180A PDP Trench IGBT
FGA20N120FTD
1200V N-Channel Trench IGBT Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed ...
FGA25N120AN
Discrete, NPT Igbt
FGA25N120AND
FGA25N120ANDTU
Copak Discrete Igbt
FGA25N120ANTD
FGA25N120ANTDTU
FGA25N120ANTDTU_NL
1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well su...
FGA25N120ANTU
Discrete, NPT Igbt
FGA25N120FTD
FGA25N12ANTD
1200v NPT Trench IGBT
FGA40N60UFD
FGA40N60UFD - Ultrafast Igbt
FGA50N100BNTD
1000v, 50A Npt-trench IGBT Co-pak
FGA50N60LS
Discrete, Short Circuit Rated Igbt With Diode (Low Saturation Voltage)
FGA70N30T
FGA70N30TD
300v, 70A PDP IGBT
FGA90N30
FGA90N30D
FGA90N33AT
FGA90N33ATD
330v, 90A PDP Trench IGBT
FGAF40N60UF
FGAF40N60UFD
FGAF40N60UFDTU
FGAF40N60UFTU
Ultrafast Igbt
FGB20N6S2
600V, SMPS ii Series N-channel Igbt, TO-263/D2PAK Package
FGB20N6S2D
600V, SMPS ii Series N-channel Igbt With Stealth Diode, TO-263/D2PAK Package
FGB20N6S2DT
FGB20N6S2D - 600V, SMPS ii Series N-channel Igbt With Stealth Diode, TO-263/D2PAK Package
FGB20N6S2T
FGB20N6S2 - 600V, SMPS ii Series N-channel Igbt, TO-263/D2PAK Package
FGB3040CS
EcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBT The FGB3040CS is an lgnition IGBT that offers outstanding SCIS capability along with a ratiometric emitter current sensing capability. This sensing is based on a emitter active area ratio...
FGB30N6S2
600V, SMPS ii Series N-channel Igbt
FGB30N6S2D
600V, SMPS ii Series N-channel Igbt With Anti-parallel Stealth Diode
FGB40N6S2
600V, SMPS ii Series N-channel Igbt
FGC1500A-130DS
High Power Inverter Use Press Pack Type
FGC1500B-130DS
Style = General Purpose ;; Type = GCT ;; Voltage = 6500V ;; Current = 1500A ;; Circuit Configuration = Symmetrical
FGC3500AX-120DS
Style = General Purpose ;; Type = GCT ;; Voltage = 6000V ;; Current = 3500A ;; Circuit Configuration = Asymmetrical
FGC4000BX-90DS
Gate Commutated Turn-off Thyristors High Power Inverter Use Press Pack Type
FGC4000BX-90DS
Style = General Purpose ;; Type = Gto/gct ;; Voltage = 4500V ;; Current = 4000A ;; Circuit Configuration = Asymmetrical
FGC400A-130DS
Style = General Purpose ;; Type = GCT ;; Voltage = 6500V ;; Current = 400A ;; Circuit Configuration = Symmetrical
FGC6000AX-120DS
Style = General Purpose ;; Type = GCT ;; Voltage = 6000V ;; Current = 6000A ;; Circuit Configuration = Asymmetrical
FGC800A-130DS
High Power Inverter Use Press Pack Type
FGC800B-130DS
Style = General Purpose ;; Type = GCT ;; Voltage = 6500V ;; Current = 800A ;; Circuit Configuration = Symmetrical
FGD2N40
400V N-channel Logic Level IGBT
FGD2N40L
400V N-Channel Logic Level IGBT This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for small engine ignition applications. The gate is ESD protected with a zener diode.
FGD3N60LSD
FGD3N60LSDTF
FGD3N60LSDTM
FGD3N60LSD_06
IGBT
FGDS-2A-50V
* EMI Filter * To comply with MIL-STD-461D/E/F power leads * To comply with MIL-STD-461C power leads * To comply with DO-160C/D/E/F power lines
FGFP30N30DTU
FGFP30N45TTU
450v, 30A PDP Trench IGBT
FGFP45N45TTU
450v, 45A PDP Trench IGBT
FGFP90N30TU
300v, 90A PDP IGBT
FGH20N60SFD
FGH20N60UFD
600v, 20A Field Stop IGBT
FGH20N6S2
600V, SMPS ii Series N-channel Igbt, TO-247 Package
FGH20N6S2D
600V, SMPS ii Series N-channel Igbt With Stealth Diode, TO-247 Package
FGH30N60LSD
FGH30N60LSDTU
PDD IGBT The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
FGH30N6S2
600V, SMPS ii Series N-channel Igbt
FGH30N6S2D
600V, SMPS ii Series N-channel Igbt With Anti-parallel Stealth Diode
FGH30N6S2_01
600v, SMPS II Series N-channel IGBT
FGH40N120AN
1200v NPT IGBT
FGH40N60SFD
FGH40N60UF
FGH40N60UFD
600v, 40A Field Stop IGBT
FGH40N6S2
600V, SMPS ii Series N-channel Igbt
FGH40N6S2D
600V, SMPS ii Series N-channel Igbt With Anti-parallel Stealth Diode
FGH50N3
FGH50N3 - 300V, PT, N-channel Igbt, TO-247 Package
FGH50N6S2
600V, SMPS ii Series N-channel Igbt
FGH50N6S2D
600V, SMPS ii Series N-channel Igbt With Anti-parallel Stealth Diode
FGH60N60SF
FGH60N60SFD
FGH60N60SFDTU
FGH60N60SFTU
FGH60N60UFD
FGH60N60UFDTU
600v, 60A Field Stop IGBT
FGH60N6S2
600V, SMPS ii Series N-channel Igbt
FGH60N6S2D
FGH60N6S2 - 600V, SMPS ii Series N-channel Igbt
FGH80N60FD
FGH80N60FD2
FGH80N60FD2TU
FGH80N60FDTU
600v, 80A Field Stop IGBT
FGI40N60SF
FGI40N60SFTU
600v, 40A Field Stop IGBT
FGK60N6S2D
600V, SMPS ii Series N-channel Igbt With Anti-parallel Stealth Diode
FGL40N120AN
FGL40N120AND
FGL40N120AND_06
FGL40N120AN_06
FGL40N150
Electrical Characteristics of the IGBT
FGL40N150D
Copak Discrete Igbt
FGL60N100BNTD
Npt-trench Igbt<<<>>>trench Insulated Gate Bipolar Transistors (IGBTs) With Npt<<<>>>technology Show Outstanding Performance in Conduction<<<>>>and Switching Characteristics as Well as Enhanced<<<>>>avalanche Ruggedness. These Devices Are Well Suited...
FGL60N100D
FGL60N100D - Copak Discrete Igbt
FGL60N170D
Copak Discrete Igbt
 
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