GS810CMEUE
GS810CREUA
GS810CREUD
GS810CREUE
GS810CSEUA
GS810CSEUD
GS810CSEUE
GS810CTEUA
GS810CTEUD
GS810CTEUE
GS810CxxEUx
| |
GS81132Q/T
| 32k X 32 Burst Synchronous SRAM: 32kx32 |
GS815018
GS815018
| 18Mb Register-to-Register Late Write SRAMs
GS815018/36A are 18,874,368-bit (18Mb) high performance SRAMs. This family of wide, low voltage HSTL I/O SRAMs is designed to operate at the speeds needed to implement economical high performance cache syst... |
GS815018AB
GS815018AB-250
GS815018AB-250I
GS815018AB-300
GS815018AB-300I
GS815018AB-333
GS815018AB-333I
GS815018AB-357
GS815018AB-357I
GS815018AGB-250
GS815018AGB-250I
GS815018AGB-300
GS815018AGB-300I
GS815018AGB-333
GS815018AGB-333I
GS815018AGB-357
GS815018AGB-357I
GS815036AB-250
GS815036AB-250I
GS815036AB-300
GS815036AB-300I
GS815036AB-333
GS815036AB-333I
GS815036AB-357
GS815036AB-357I
GS815036AGB-250
GS815036AGB-250I
GS815036AGB-300
GS815036AGB-300I
GS815036AGB-333
GS815036AGB-333I
GS815036AGB-357
GS815036AGB-357I
| 1M x 18, 512K x 36 18Mb Register-register Late Write SRAM |
GS8150V18
GS8150V18
| 18Mb Register-to-Register Late Write SRAMs
Because GS8150V18/36A are synchronous devices, address
data inputs and read/write control inputs are captured on the
rising edge of the input clock. Write cycles are internally selftimed
and initiated by... |
GS8150V18AB
GS8150V18AB-250
GS8150V18AB-250I
GS8150V18AB-300
GS8150V18AB-300I
GS8150V18AB-333
GS8150V18AB-333I
GS8150V18AB-357
GS8150V18AB-357I
GS8150V18AGB-250
GS8150V18AGB-250I
GS8150V18AGB-300
GS8150V18AGB-300I
GS8150V18AGB-333
GS8150V18AGB-333I
GS8150V18AGB-357
GS8150V18AGB-357I
| 1M x 18, 512K x 36 18Mb Register-register Late Write SRAM |
GS8150V36A
| 18Mb Register-to-Register Late Write SRAMs
Because GS8150V18/36A are synchronous devices, address
data inputs and read/write control inputs are captured on the
rising edge of the input clock. Write cycles are internally selftimed
and initiated by... |
GS8150V36AB-250
GS8150V36AB-250I
GS8150V36AB-300
GS8150V36AB-300I
GS8150V36AB-333
GS8150V36AB-333I
GS8150V36AB-357
GS8150V36AB-357I
GS8150V36AGB-250
GS8150V36AGB-250I
GS8150V36AGB-300
GS8150V36AGB-300I
GS8150V36AGB-333
GS8150V36AGB-333I
GS8150V36AGB-357
GS8150V36AGB-357I
| 1M x 18, 512K x 36 18Mb Register-register Late Write SRAM |
GS8150Z18T
GS8150Z36T
GS8151Z18T
GS8151Z36T
| 16mb Pipelined And Flow Through Synchronous NBT SRAM |
GS816018
GS816018A
GS816018AT-150
GS816018AT-150I
GS816018AT-200
GS816018AT-200I
GS816018AT-250
GS816018AT-250I
GS816018AT-300I
| |
GS816018B
| 18Mb Burst SRAMs
FT pin for user-configurable flow through or pipeline operation
. Single Cycle Deselect (GS816018/32/36B)
. Dual Cycle Deselect (GS8160E18/32/36B)
. ZQ mode pin for user-selectable high/low output drive
. 2.5 V or 3.3 V +10%... |
GS816018BGT-150
GS816018BGT-150I
GS816018BGT-150IV
| 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst Srams |
