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K182J20C0GK5.H5
K182J20C0GK5.L2
K182J20C0GL5.H5
K182K15C0GF5.H5
K182K15C0GF5.L2
K182K15X7RF5.H5
K182K15X7RF5.L2
K182K15X7RK5.H5
K182K15X7RK5.L2
K182K15X7RL5.H5
K182K20C0GK5.H5
K182K20C0GK5.L2
K182K20C0GL5.H5
K182M15X7RF5.H5
K182M15X7RF5.L2
K182M15X7RK5.H5
K182M15X7RK5.L2
K182M15X7RL5.H5
K183K15X7RF5.H5
K183K15X7RF5.L2
K183K15X7RK5.H5
K183K15X7RK5.L2
K183K20X7RL5.H5
K183M15X7RF5.H5
K183M15X7RF5.L2
K183M15X7RK5.H5
K183M15X7RK5.L2
K183M20X7RL5.H5
| Dipped Radial Multilayer Ceramic Capacitors for 200 - 500 Vdc |
K1B3216B7D
K1B3216B7D
K1B3216BDD
K1B3216BDD-
| 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM
The world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG's UtRAM products are designed to mee... |
K1B5616BAM
K1B5616BAM-I
K1B5616BAM-I
K1B5616BBM
K1B5616BBM-I
K1B5616BBM-I
| 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM
The world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG's UtRAM products are designed t... |
K1B6416B6C
K1B6416B6C-I
| 4M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM
The world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG's UtRAM products are designed to mee... |
K1N60SA
| Triac (silicon Bidirectional Thyristor) |
K1S161611A
K1S161611A-I
| 1mx16 bit Uni-transistor Random Access Memory |
K1S161615M
K1S161615M-EI70
K1S161615M-I
| Description = K1S161615M 1M X 16 Bit Uni-transistor CMOS RAM ;; Organization = 1Mx16 ;; Vcc(V) = 3.0 ;; Operating Temperature = i ;; Operating Current(mA) = 30 ;; Standby Current(uA) = 70 ;; Package = 48TBGA ;; Production Status = Engineering Sample ... |
K1S16161CA
K1S16161CA-I
| 1Mx16 bit Page Mode Uni-Transistor Random Access Memory
The K1S16161CA is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scal... |
K1S1616B1A
K1S1616B1A-BI70
K1S1616B1A-BI85
K1S1616B1A-FI70
K1S1616B1A-FI85
K1S1616B1A-I
| 1mx16 bit Uni-transistor Random Access Memory |
K1S1616B1M
K1S1616B1M-EI70
K1S1616B1M-EI85
K1S1616B1M-I
| Description = K1S1616B1M 1M X 16 Bit Uni-transistor CMOS RAM ;; Organization = 1Mx16 ;; Vcc(V) = 1.8 ;; Operating Temperature = i ;; Operating Current(mA) = 25 ;; Standby Current(uA) = 60 ;; Package = 48TBGA ;; Production Status = Engineering Sample ... |
K1S1616BCA
K1S1616BCA-I
| 1Mx16 bit Page Mode Uni-Transistor Random Access Memory
The K1S1616BCA is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scal... |
K1S2816BCM
K1S2816BCM-I
| 8M x 16 bit Page Mode Uni-Transistor CMOS RAM
The K1S2816BCM is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell.
The device supports 4 page read operation and Industrial temperature range.
The device supports dual... |
K1S321611C
K1S321611C-FI70
K1S321611C-I
| Description = K1S321611C 2Mx16 Bit Uni-transistor Random Access Memory ;; Organization = 2Mx16 ;; Vcc(V) = 2.7~3.1 ;; Operating Temperature = i ;; Operating Current(mA) = 35 ;; Standby Current(uA) = 100 ;; Package = 48FBGA 6x8 ;; Production Status = ... |
K1S321615A
K1S321615A-E
K1S321615A-EE85
| Description = K1S321615A 2M X 16 Bit Uni-transistor CMOS RAM ;; Organization = 2Mx16 ;; Vcc(V) = 2.7~3.1 ;; Operating Temperature = e ;; Operating Current(mA) = 35 ;; Standby Current(uA) = 100 ;; Package = 48TBGA 7x9 ;; Production Status = Mass Produ... |
K1S321615C
K1S321615C-FI60
K1S321615C-FI70
K1S321615C-I
| Description = K1S321615C 2M X 16 Bit Uni-transistor CMOS RAM ;; Organization = 2Mx16 ;; Vcc(V) = 2.7~3.1 ;; Operating Temperature = i ;; Operating Current(mA) = 35 ;; Standby Current(uA) = 100 ;; Package = 48FBGA ;; Production Status = Eol ;; Comment... |
K1S321615M
K1S321615M-E
K1S321615M-EE10
| Description = K1S321615M 2M X 16 Bit Uni-transistor CMOS RAM ;; Organization = 2Mx16 ;; Vcc(V) = 3.0 ;; Operating Temperature = e ;; Operating Current(mA) = 25 ;; Standby Current(uA) = 150 ;; Package = 48 Tbga ;; Production Status = Eol ;; Comments =... |
K1S32161CC
K1S32161CC-FI70
K1S32161CC-I
| Description = K1S32161CC 2Mx16 Bit Page Mode Uni-transistor Random Access Memory ;; Organization = 2Mx16 ;; Vcc(V) = 2.7~3.1 ;; Operating Temperature = i ;; Operating Current(mA) = 40 ;; Standby Current(uA) = 100 ;; Package = 48FBGA 6x8 ;; Production... |
K1S3216B1C
| Description = K1S3216B1C 2Mx16 Bit Uni-transistor Random Access Memory ;; Organization = 2Mx16 ;; Vcc(V) = 1.7~2.1 ;; Operating Temperature = i ;; Operating Current(mA) = 30 ;; Standby Current(uA) = 100 ;; Package = 48FBGA 6x8 ;; Production Status = ... |
K1S3216B1C
| 2M x 16 bit Uni-Transistor CMOS RAM
he K1S3216B1C is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell.
The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system d... |
K1S3216B1C-FI70
K1S3216B1C-FI85
K1S3216B1C-I
| Description = K1S3216B1C 2Mx16 Bit Uni-transistor Random Access Memory ;; Organization = 2Mx16 ;; Vcc(V) = 1.7~2.1 ;; Operating Temperature = i ;; Operating Current(mA) = 30 ;; Standby Current(uA) = 100 ;; Package = 48FBGA 6x8 ;; Production Status = ... |
K1S3216B1C-I
| 2M x 16 bit Uni-Transistor CMOS RAM
he K1S3216B1C is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell.
The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system d... |
K1S3216BCC
K1S3216BCC-FI70
K1S3216BCC-FI85
| 2M x 16 bit Page Mode Uni-Transistor CMOS RAM
The K1S3216BCC is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell.
The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package... |
K1S3216BCD
K1S3216BCD-I
| 2M x 16 bit Page Mode Uni-Transistor CMOS RAM
The K1S3216BCD is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell.
The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package... |
K1S64161CC
K1S64161CC-I
| 4M x 16 bit Page Mode Uni-Transistor CMOS RAM
The K1S64161CC is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell.
The device supports 4 page read operation and Industrial temperature range.
The device supports dual... |
K1S6416BCC
K1S6416BCC-
| 4M x 16 bit Page Mode Uni-Transistor CMOS RAM
The K1S6416BCC is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell.
The device supports 4 page read operation and Industrial temperature range.
The device supports dual... |
K1S6416BCC-I
| 4mx16 bit Page Mode Uni-transistor Random Access Memory |
K1V10
K1V11
K1V12
K1V14
K1V16
K1V18
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