| |
K4R571669A
K4R571669A-FbCcM8
K4R571669A-FCK8
| Description = K4R571669A, K4R881869A 512K X 16/18bit X 32s Banks Direct RDRAM™ ;; Organization = (512Kx16)x32s ;; Voltage(V) = 2.5 ;; Refresh = 16K/32ms ;; Speed(MHz)/ TRAC(ns) = 400/40,400/45 ;; Package = 92WBGA ;; Production Status = Eol ;; C... |
K4R571669D
K4R571669D-FbCcT9
K4R571669D-FCK8
K4R571669D-FCM8
K4R571669D-FCM9
K4R571669D-FCN9
| Description = K4R571669D, K4R881869D 512K X 16/18bit X 32s Banks Direct RDRAM™ ;; Organization = (512Kx16)x32s ;; Voltage(V) = 2.5 ;; Refresh = 16K/32ms ;; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ;; Package = 92WBGA ;;... |
K4R571669E
K4R571669E-G
K4R571669E-GCK8
K4R571669E-GCM8
K4R571669E-GCT9
| The RDRAM® device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video and any other application where high bandwidth and low latency are required.
The 256Mb... |
K4R571669M
| Direct Rdram TM |
K4R578816869A
| |
K4R761869A
K4R761869A-F
K4R761869A-FbCcN1
K4R761869A-FCM8
K4R761869A-FCT9
| Description = K4R761869A 1M X 18bit X 32s Banks Direct RDRAM™ ;; Organization = (1Mx18)x32s ;; Voltage(V) = 2.5 ;; Refresh = 32K/32ms ;; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,400/40 ;; Package = 92WBGA ;; Production Status = Mass Production ;; ... |
K4R761869A-GCM8
K4R761869A-GCN1
K4R761869A-GCT9
| 576mbit Rdram (a-die) 1M x 18bit x 32s Banks Direct Rdramtm |
K4R881869
| 288mbit Rdram 512K x 18 bit x 2*16 Dependent Banks Direct Rdramtm |
K4R881869A
K4R881869A-FCK8
K4R881869A-FCM8
K4R881869A-FCM9
K4R881869A-FCN9
K4R881869A-FCT9
| Description = K4R881869A, K4R571669A 512K X 16/18bit X 32s Banks Direct RDRAM™ ;; Organization = 512Kx18x32s ;; Voltage(V) = 2.5 ;; Refresh = 16K/32ms ;; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ;; Package = 92WBGA ;; Producti... |
K4R881869D
K4R881869D-FCK8
K4R881869D-FCM8
K4R881869D-FCM9
K4R881869D-FCN9
K4R881869D-FCT9
| Description = K4R881869D, K4R571669D 512K X 16/18bit X 32s Banks Direct RDRAM™ ;; Organization = (512Kx18)x32s ;; Voltage(V) = 2.5 ;; Refresh = 16K/32ms ;; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ;; Package = 92WBGA ;;... |
K4R881869E
K4R881869E-FCK8
K4R881869E-FCM8
K4R881869E-FCN1
K4R881869E-FCT9
K4R881869E-G
K4R881869E-GCK8
K4R881869E-GCM8
K4R881869E-GCT9
| he RDRAM® device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
The 288Mb... |
K4R881869M
| Description = K4R881869M Direct RDRAM™ ;; Organization = 512Kx18x32s ;; Voltage(V) = 2.5 ;; Refresh = 16K/32ms ;; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ;; Package = 92uBGA ;; Production Status = Eol ;; Comments = Ecc |
K4R881869M-NBCCG6
| 288mbit Rdram 512k X 18 Bit X 2*16 Dependent Banks Direct Rdramtm |
K4R881869M-NCG6
K4R881869M-NCK7
K4R881869M-NCK8
| Description = K4R881869M Direct RDRAM™ ;; Organization = 512Kx18x32s ;; Voltage(V) = 2.5 ;; Refresh = 16K/32ms ;; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ;; Package = 92uBGA ;; Production Status = Eol ;; Comments = Ecc |
K4S160822D
K4S160822DT-10
K4S160822DT-7
K4S160822DT-8
K4S160822DT-G/F10
K4S160822DT-G/F7
K4S160822DT-G/F8
K4S160822DT-G/FH
K4S160822DT-G/FL
K4S160822DT-H
K4S160822DT-L
| Description = K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ;; Organization = 2Mx8 ;; Bank/ Interface = 2B/LVTTL ;; Refresh = 2K/32ms ;; Speed = 1H,1L,10 ;; Package = 44TSOP2 ;; Power = C,l ;; Production Status = Eol ;; Comments = - |
K4S161622D
| Description = K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ;; Organization = 1Mx16 ;; Bank/ Interface = 2B/LVTTL ;; Refresh = 2K/32ms ;; Speed = 55,60,70,80,10 ;; Package = 50TSOP2 ;; Power = C,l ;; Production Status = Mass Production ;; Comme... |
K4S161622D-TC
| |
K4S161622D-TC/L10
K4S161622D-TC/L55
K4S161622D-TC/L60
K4S161622D-TC/L70
K4S161622D-TC/L80
K4S161622D-TE
| Description = K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ;; Organization = 1Mx16 ;; Bank/ Interface = 2B/LVTTL ;; Refresh = 2K/32ms ;; Speed = 55,60,70,80,10 ;; Package = 50TSOP2 ;; Power = C,l ;; Production Status = Mass Production ;; Comme... |
K4S161622D-TI
| |
K4S161622D-TI/E
K4S161622D-TI/E10
K4S161622D-TI/E50
K4S161622D-TI/E55
K4S161622D-TI/E60
K4S161622D-TI/E70
K4S161622D-TI/E80
| Description = K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ;; Organization = 1Mx16 ;; Bank/ Interface = 2B/LVTTL ;; Refresh = 2K/32ms ;; Speed = 55,60,70,80,10 ;; Package = 50TSOP2 ;; Power = C,l ;; Production Status = Mass Production ;; Comme... |
K4S161622D-TL
K4S161622D-TP
| |
K4S161622E
| Description = K4S161622E 512K X 16Bit X 2 Banks Synchronous DRAM ;; Organization = 1Mx16 ;; Bank/ Interface = 2B/LVTTL ;; Refresh = 2K/32ms ;; Speed = 60,70,80,10 ;; Package = 50TSOP2 ;; Power = C,l,i,p,e,n ;; Production Status = Mass Production ;; C... |
K4S161622E-TC
| |
K4S161622E-TC10
K4S161622E-TC55
K4S161622E-TC60
K4S161622E-TC70
K4S161622E-TC80
| Description = K4S161622E 512K X 16Bit X 2 Banks Synchronous DRAM ;; Organization = 1Mx16 ;; Bank/ Interface = 2B/LVTTL ;; Refresh = 2K/32ms ;; Speed = 60,70,80,10 ;; Package = 50TSOP2 ;; Power = C,l,i,p,e,n ;; Production Status = Mass Production ;; C... |
K4S161622E-TE
K4S161622E-TI
| |
K4S161622H
K4S161622H-TC10
K4S161622H-TC55
K4S161622H-TC60
K4S161622H-TC70
K4S161622H-TC80
| Description = K4S161622H 512K X 16Bit X 2 Banks Synchronous DRAM ;; Organization = 1Mx16 ;; Bank/ Interface = 2B/LVTTL ;; Refresh = 2K/32ms ;; Speed = 55,60,70,80,10 ;; Package = 50TSOP2 ;; Power = C ;; Production Status = Under Development ;; Commen... |
K4S1G0632D
K4S1G0632D-UC75
| st.32M x 4Bit x 4 Banks SDRAM The K4S1G0632D is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 67,108,864 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. |
K4S1G0632D-UC75
| st.16M x 8Bit x 4 Banks SDRAM The K4S1G0732D is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. |
K4S1G0632MT
| Description = K4S1G0632MT 64M X 4Bit X 4 Banks Synchronous DRAM ;; Organization = 256Mx4 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 75,1H,1L ;; Package = 54TSOP2 ;; Power = C,l ;; Production Status = Mass Production ;; Comments = - |
K4S1G0732B
| 32M x 8Bit x 4 Banks Synchronous DRAM
The K4S1G0732B is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows preci... |
