Semiconductors list from K4S561632E-UL60 to K4S640432F



K4S561632E-UL60
K4S561632E-UL75
4M x 16bit x 4 Banks Mobile Sdram in 54fbga
K4S561632H
The K4S561632H is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system ...
K4S561632H-T(U)C/L60
K4S561632H-T(U)C/L75
The K4S560432H is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system...
K4S561633C
Description = K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ;; Organization = 16Mx16 ;; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ;; Temperature = L,n,p ;; Current(Icc1/Icc6) = 85mA/800uA ;; Speed = 1L,1H,75 ;; Mobile Function = no ;; Package =...
K4S561633C-N
K4S561633C-P1H
K4S561633C-P1L
K4S561633C-P75
K4S561633C-RBL
4M x 16bit x 4 Banks Mobile Sdram in 54fbga
K4S561633C-RBL/N/P
K4S561633C-RBL/N/P1H
K4S561633C-RBL/N/P1L
K4S561633C-RBL/N/P75
Description = K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ;; Organization = 16Mx16 ;; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ;; Temperature = L,n,p ;; Current(Icc1/Icc6) = 85mA/800uA ;; Speed = 1L,1H,75 ;; Mobile Function = no ;; Package =...
K4S561633C-RL
4M x 16bit x 4 Banks Mobile Sdram in 54fbga
K4S561633C-RLN
K4S561633C-XXXX
Description = K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ;; Organization = 16Mx16 ;; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ;; Temperature = L,n,p ;; Current(Icc1/Icc6) = 85mA/800uA ;; Speed = 1L,1H,75 ;; Mobile Function = no ;; Package =...
K4S561633F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC he K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows pr...
K4S561633F-C
K4S561633F-E
K4S561633F-F1H
K4S561633F-F1L
K4S561633F-F75
K4S561633F-G
K4S561633F-L
K4S561633F-N
K4S561633F-X
4M x 16bit x 4 Banks Mobile Sdram in 54fbga
K4S561633F-X(Z)E/N/G/C/L/F1H
K4S561633F-X(Z)E/N/G/C/L/F1L
K4S561633F-X(Z)E/N/G/C/L/F75
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC he K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows pr...
K4S561633F-XE
4M x 16bit x 4 Banks Mobile Sdram in 54fbga
K4S56163LC
K4S56163LC-RBF/R
K4S56163LC-RBF/R15
K4S56163LC-RBF/R1H
K4S56163LC-RBF/R1L
K4S56163LC-RBF/R75
Description = K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ;; Organization = 16Mx16 ;; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ;; Temperature = L,n,f,r,g,s,p ;; Current(Icc1/Icc6) = 65mA/750uA ;; Speed = 15,1L,75,1H ;; Mobile Function = no or Pasr,tcs...
K4S56163LC-RF
4M x 16bit x 4 Banks Mobile Sdram in 54fbga
K4S56163LC-RFR
K4S56163LC-XXXX
Description = K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ;; Organization = 16Mx16 ;; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ;; Temperature = L,n,f,r,g,s,p ;; Current(Icc1/Icc6) = 65mA/750uA ;; Speed = 15,1L,75,1H ;; Mobile Function = no or Pasr,tcs...
K4S56163LF
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC he K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows pr...
K4S56163LF-F1H
K4S56163LF-F1L
K4S56163LF-F75
K4S56163LF-G
K4S56163LF-L
K4S56163LF-N
4M x 16bit x 4 Banks Mobile Sdram in 54fbga
K4S56163LF-X(Z)E/N/G/C/L/F1H
K4S56163LF-X(Z)E/N/G/C/L/F1L
K4S56163LF-X(Z)E/N/G/C/L/F75
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC he K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows pr...
K4S56163LF-XE
4M x 16bit x 4 Banks Mobile Sdram in 54fbga
K4S56163PF
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.
K4S56163PF-F1L
K4S56163PF-F90
4M x 16bit x 4 Banks Mobile Sdram in 54fbga
K4S56163PF-R(B)G/F1L
K4S56163PF-R(B)G/F75
K4S56163PF-R(B)G/F90
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.
K4S56163PF-RG
K4S56163PF-RG/F1L
K4S56163PF-RG/F75
K4S56163PF-RG/F90
4M x 16bit x 4 Banks Mobile Sdram in 54fbga
K4S563233F
K4S563233F-F(H)E/N/G/C/L/F60
K4S563233F-F(H)E/N/G/C/L/F75
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA The K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows ...
K4S563233FHN
K4S563233FHN75
2M x 32bit x 4 Banks Mobile Sdram in 90fbga
K4S56323LF
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows ...
K4S56323LF-C
2M x 32bit x 4 Banks Mobile Sdram in 90fbga
K4S56323LF-F(H)E/N/S/C/L/R60
K4S56323LF-F(H)E/N/S/C/L/R75
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows ...
K4S56323LF-FE
K4S56323LF-L
K4S56323LF-N
K4S56323LF-R1L
K4S56323LF-S
2M x 32bit x 4 Banks Mobile Sdram in 90fbga
K4S56323PF
K4S56323PF-F(H)G/F75
K4S56323PF-F(H)G/F90
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA he K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology.
K4S56323PF-F1L
K4S56323PF-F75
K4S56323PF-F90
K4S56323PF-FG
2M x 32bit x 4 Banks Mobile Sdram in 90fbga
K4S640432C
K4S640432C-TC/L10
K4S640432C-TC/L1H
K4S640432C-TC/L1L
K4S640432C-TC/L70
K4S640432C-TC/L80
Description = K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ;; Organization = 16Mx4 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 75,80,1H,1L,10 ;; Package = 54TSOP2 ;; Power = C,l ;; Production Status = Eol ;; Comments = PC133,100,...
K4S640432D
K4S640432D-TC/L10
K4S640432D-TC/L1H
K4S640432D-TC/L1L
K4S640432D-TC/L75
K4S640432D-TC/L80
Description = K4S640432D 4MB X 4Bit X 4 Banks Synchronous DRAM ;; Organization = 16Mx4 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 75,80,1H,1L,10 ;; Package = 54TSOP2 ;; Power = C,l ;; Production Status = Eol ;; Comments = -
K4S640432E
K4S640432E-TC/L1H
K4S640432E-TC/L1L
K4S640432E-TC/L75
Description = K4S640432E 4M X 4Bit X 4 Banks Synchronous DRAM ;; Organization = 16Mx4 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 75,1H,1L ;; Package = 54TSOP2 ;; Power = C,l ;; Production Status = Eol ;; Comments = -
K4S640432F
Description = K4S640432F 4M X 4Bit X 4 Banks Synchronous DRAM ;; Organization = 16Mx4 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 75 ;; Package = 54TSOP2 ;; Power = C,l ;; Production Status = Mass Production ;; Comments = -
 
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