| |
K4T51083QC-ZCE7
K4T51083QC-ZCLCC
K4T51083QC-ZCLD5
K4T51083QC-ZCLD6
K4T51083QC-ZCLE6
K4T51083QC-ZLCC
K4T51083QC-ZLD5
K4T51083QC-ZLE6
K4T51083QC-ZLE7
K4T51083QE
| 512mb E-die DDR2 Sdram Specification |
K4T51083QM
K4T51083QM-GCD4
K4T51083QM-GCD5
K4T51083QM-GCE5
K4T51083QM-GLD4
K4T51083QM-GLD5
K4T51083QM-GLE5
| Description = K4T51083QM 512Mb M-die DDR2 Sdram ;; Organization = 64Mx8 ;; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ;; Refresh = 8K/64ms ;; Speed = D5,E5,D4 ;; Package = 60FBGA ;; Power = C,l ;; Production Status = Engineering Sample ;; Comments =... |
K4T51163QB
| Description = K4T51163QB 512Mb B-die DDR2 Sdram ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ;; Refresh = 8K/64ms ;; Speed = E6,D5,CC ;; Package = 84FBGA ;; Power = C,l ;; Production Status = Engineering Sample ;; Comments ... |
K4T51163QB
| 512Mb B-die DDR2 SDRAM
The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 533Mb/sec/pin ... |
K4T51163QB-GCCC
| Description = K4T51163QB 512Mb B-die DDR2 Sdram ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ;; Refresh = 8K/64ms ;; Speed = E6,D5,CC ;; Package = 84FBGA ;; Power = C,l ;; Production Status = Engineering Sample ;; Comments ... |
K4T51163QB-GCCC
| 512Mb B-die DDR2 SDRAM
The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 533Mb/sec/pin ... |
K4T51163QB-GCD5
| Description = K4T51163QB 512Mb B-die DDR2 Sdram ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ;; Refresh = 8K/64ms ;; Speed = E6,D5,CC ;; Package = 84FBGA ;; Power = C,l ;; Production Status = Engineering Sample ;; Comments ... |
K4T51163QB-GCD5
| 512Mb B-die DDR2 SDRAM
The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 533Mb/sec/pin ... |
K4T51163QB-GCE6
K4T51163QB-GLCC
K4T51163QB-GLD5
K4T51163QB-GLE6
| Description = K4T51163QB 512Mb B-die DDR2 Sdram ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ;; Refresh = 8K/64ms ;; Speed = E6,D5,CC ;; Package = 84FBGA ;; Power = C,l ;; Production Status = Engineering Sample ;; Comments ... |
K4T51163QB-ZCCC
K4T51163QB-ZCD5
| 512Mb B-die DDR2 SDRAM
The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 533Mb/sec/pin ... |
K4T51163QC
K4T51163QC-ZC(L)CC
K4T51163QC-ZC(L)D5
K4T51163QC-ZC(L)E6
K4T51163QC-ZC(L)E7
| 512Mb C-die DDR2 SDRAM
The 512Mb DDR2 SDRAM is organized as a 8Mbit x 16 I/Os x 4 banks device.
This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is desig... |
K4T51163QC-ZCCC
K4T51163QC-ZCD5
K4T51163QC-ZCD6
K4T51163QC-ZCE6
K4T51163QC-ZCE7
K4T51163QC-ZCLCC
K4T51163QC-ZCLD5
K4T51163QC-ZCLD6
K4T51163QC-ZCLE6
K4T51163QC-ZLCC
K4T51163QC-ZLD5
K4T51163QC-ZLE6
K4T51163QC-ZLE7
K4T51163QE
| 512mb E-die DDR2 Sdram Specification |
K4T51163QM
K4T51163QM-GCD4
K4T51163QM-GCD5
K4T51163QM-GCE5
K4T51163QM-GLD4
K4T51163QM-GLD5
K4T51163QM-GLE5
| Description = K4T51163QM 512Mb M-die DDR2 Sdram ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ;; Refresh = 8K/64ms ;; Speed = D5,E5,D4 ;; Package = 84FBGA ;; Power = C,l ;; Production Status = Engineering Sample ;; Comments ... |
K4T56043QF
| Description = K4T56043QF 256Mb F-die DDR2 Sdram ;; Organization = 64Mx4 ;; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ;; Refresh = 8K/64ms ;; Speed = E6,D5,CC ;; Package = 60FBGA ;; Power = C,l ;; Production Status = Engineering Sample(Nov.'03) ;; C... |
K4T56043QF
| 256Mb F-die DDR2 SDRAM
The 256Mb DDR2 SDRAM chip is organized as either 16Mbit x 4 I/Os x 4 banks or 8Mbit x 8 I/Os x 4banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for ge... |
K4T56043QF-GCCC
| Description = K4T56043QF 256Mb F-die DDR2 Sdram ;; Organization = 64Mx4 ;; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ;; Refresh = 8K/64ms ;; Speed = E6,D5,CC ;; Package = 60FBGA ;; Power = C,l ;; Production Status = Engineering Sample(Nov.'03) ;; C... |
K4T56043QF-GCCC
| 256Mb F-die DDR2 SDRAM
The 256Mb DDR2 SDRAM chip is organized as either 16Mbit x 4 I/Os x 4 banks or 8Mbit x 8 I/Os x 4banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for ge... |
K4T56043QF-GCD5
| Description = K4T56043QF 256Mb F-die DDR2 Sdram ;; Organization = 64Mx4 ;; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ;; Refresh = 8K/64ms ;; Speed = E6,D5,CC ;; Package = 60FBGA ;; Power = C,l ;; Production Status = Engineering Sample(Nov.'03) ;; C... |
K4T56043QF-GCD5
| 256Mb F-die DDR2 SDRAM
The 256Mb DDR2 SDRAM chip is organized as either 16Mbit x 4 I/Os x 4 banks or 8Mbit x 8 I/Os x 4banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for ge... |
K4T56043QF-GCE6
K4T56043QF-GLCC
K4T56043QF-GLD5
K4T56043QF-GLE6
| Description = K4T56043QF 256Mb F-die DDR2 Sdram ;; Organization = 64Mx4 ;; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ;; Refresh = 8K/64ms ;; Speed = E6,D5,CC ;; Package = 60FBGA ;; Power = C,l ;; Production Status = Engineering Sample(Nov.'03) ;; C... |
K4T56043QF-ZCCC
K4T56043QF-ZCD5
| 256Mb F-die DDR2 SDRAM
The 256Mb DDR2 SDRAM chip is organized as either 16Mbit x 4 I/Os x 4 banks or 8Mbit x 8 I/Os x 4banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for ge... |
K4T56083QF
| Description = K4T56083QF 256Mb F-die DDR2 Sdram ;; Organization = 32Mx8 ;; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ;; Refresh = 8K/64ms ;; Speed = E6,D5,CC ;; Package = 60FBGA ;; Power = C,l ;; Production Status = Engineering Sample(Nov.'03) ;; C... |
K4T56083QF
| 256Mb F-die DDR2 SDRAM
The 256Mb DDR2 SDRAM chip is organized as either 16Mbit x 4 I/Os x 4 banks or 8Mbit x 8 I/Os x 4banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for ge... |
K4T56083QF-GCCC
| Description = K4T56083QF 256Mb F-die DDR2 Sdram ;; Organization = 32Mx8 ;; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ;; Refresh = 8K/64ms ;; Speed = E6,D5,CC ;; Package = 60FBGA ;; Power = C,l ;; Production Status = Engineering Sample(Nov.'03) ;; C... |
K4T56083QF-GCCC
| 256Mb F-die DDR2 SDRAM
The 256Mb DDR2 SDRAM chip is organized as either 16Mbit x 4 I/Os x 4 banks or 8Mbit x 8 I/Os x 4banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for ge... |
K4T56083QF-GCD5
| Description = K4T56083QF 256Mb F-die DDR2 Sdram ;; Organization = 32Mx8 ;; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ;; Refresh = 8K/64ms ;; Speed = E6,D5,CC ;; Package = 60FBGA ;; Power = C,l ;; Production Status = Engineering Sample(Nov.'03) ;; C... |
K4T56083QF-GCD5
| 256Mb F-die DDR2 SDRAM
The 256Mb DDR2 SDRAM chip is organized as either 16Mbit x 4 I/Os x 4 banks or 8Mbit x 8 I/Os x 4banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for ge... |
K4T56083QF-GCE6
| Description = K4T56083QF 256Mb F-die DDR2 Sdram ;; Organization = 32Mx8 ;; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ;; Refresh = 8K/64ms ;; Speed = E6,D5,CC ;; Package = 60FBGA ;; Power = C,l ;; Production Status = Engineering Sample(Nov.'03) ;; C... |
K4T56083QF-GCE6
| 256Mb F-die DDR2 SDRAM
The 256Mb DDR2 SDRAM chip is organized as either 16Mbit x 4 I/Os x 4 banks or 8Mbit x 8 I/Os x 4banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for ge... |
K4T56083QF-GLCC
K4T56083QF-GLD5
K4T56083QF-GLE6
| Description = K4T56083QF 256Mb F-die DDR2 Sdram ;; Organization = 32Mx8 ;; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ;; Refresh = 8K/64ms ;; Speed = E6,D5,CC ;; Package = 60FBGA ;; Power = C,l ;; Production Status = Engineering Sample(Nov.'03) ;; C... |
K4T56083QF-ZCD5
| 256Mb F-die DDR2 SDRAM
The 256Mb DDR2 SDRAM chip is organized as either 16Mbit x 4 I/Os x 4 banks or 8Mbit x 8 I/Os x 4banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for ge... |
K4T56083QF-ZCE6
| 256mb F-die DDR2 Sdram |
K4U52324QE
K4U52324QE-BC07
K4U52324QE-BC08
K4U52324QE-BC09
| The K4U52324QE is 536,870,912 bits of hyper synchronous data rate Dynamic RAM organized as 8 x 2,097,152 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performa... |
K4X1G163PC-L
| Mobile DDR Sdram |
K4X1G323PC-L
| 32mx32 Mobile DDR Sdram |
K4X51163PC
K4X51163PC-FEC3
K4X51163PC-FECA
K4X51163PC-FGC3
K4X51163PC-FGCA
K4X51163PC-LEC3
K4X51163PC-LECA
K4X51163PC-LGC3
K4X51163PC-LGCA
K4X51163PE-L
| 32mx16 Mobile DDR Sdram |
K4X51323PC-7E
K4X51323PC-7EC3
K4X51323PC-7ECA
K4X51323PC-7GC3
| 16M x32 Mobile-ddr Sdram |
