| |
MHL1JCTTDR12
MHL1JCTTDR15
MHL1JCTTDR18
MHL1JCTTDR22
MHL1JTTTD27N
MHL1JTTTD39N
| Multilayer Ceramic Inductors |
MHL21336
| MHL21336 2110-2170 Mhz, 3 W, 31 DB RF Linear Ldmos Amplifier |
MHL21336N
| 3G Band
RF Linear LDMOS Amplifier
Designed for ultra - linear amplifier applications in 50 ohm systems operating in
the 3G frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group dela... |
MHL21336NN
| Designed for ultra - linear amplifier applications in 50 ohm systems operating
in the 3G frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristi... |
MHL21336NN
| 3G Band RF Linear Ldmos Amplifier |
MHL8015
| |
MHL8015
| UHF Linear Amplifier |
MHL8018
| MHL8018 400 MW, 18.5 DB 40-1000 MHZ UHF Linear Amplifer - Archived |
MHL8115
| MHL8115 RF Power Amplifier - Archived |
MHL8118
| MHL8118 50-1000 Mhz, 1 W, 28 V, 17.5 DB RF Power Amplifier - Archived |
MHL9125
| MHL9125 1.3 W, 20 DB, 800-960 MHZ Linear Amplifier - Archived |
MHL9128
| MHL9128 800-960 Mhz, 1.3 W, 15 V, 20 DB, UHF Linear Amplifier - Archived |
MHL9236
MHL9236M
| MHL9236, MHL9236M 800-960 Mhz, 2.5 W, 30.5 DB RF Linear Ldmos Amplifiers |
MHL9236N
| Cellular Band
RF Linear LDMOS Amplifier
Designed for ultra - linear amplifier applications in 50 ohm systems operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellen... |
MHL9236NN
| Designed for ultra - linear amplifier applications in 50 ohm systems operating
in the cellular frequency band. A silicon FET Class A design provides
outstanding linearity and gain. In addition, the excellent group delay and phase
linearity charact... |
MHL9318
| MHL9318 860-900 Mhz, 3 W, 17.5 DB RF Linear Ldmos Amplifier |
MHL9318D
| THE RF LINE Cellular BAND RF Linear Ldmos Amplifier |
MHL9838
MHL9838D
| MHL9838 800-925 Mhz, 8 W, 31 DB RF Linear Ldmos Amplifier |
MHL9838N
| Cellular Band
RF Linear LDMOS Amplifier
Designed for ultra - linear amplifier applications in 50 ohm systems operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellen... |
MHM90401
| |
MHO
| Package Description = 14 Pin Dip ;; Frequency = 0.732 KHZ to 80.000 MHZ ;; Output Logic = Hcmos/ttl ;; Supply Voltage = 5.0 Volt |
MHO+
MHO+11FAAD
MHO+11FAAD-R
MHO+11FAAG
MHO+11FAAG-R
MHO+11FAD
MHO+11FAD-R
MHO+11FAG
MHO+11FAG-R
MHO+11FBD
MHO+11FBD-R
MHO+11FBG
MHO+11FBG-R
MHO+11FCD
MHO+11FCD-R
MHO+11FCG
MHO+11FCG-R
MHO+11FDD
MHO+11FDD-R
MHO+11FDG
MHO+11FDG-R
MHO+11FFD
MHO+11FFD-R
MHO+11FFG
MHO+11FFG-R
MHO+11FGD
MHO+11FGD-R
MHO+11FGG
MHO+11FGG-R
MHO+11TAAD
MHO+11TAAD-R
MHO+11TAAG
MHO+11TAAG-R
MHO+11TAD
MHO+11TAD-R
MHO+11TAG
MHO+11TAG-R
MHO+11TBD
MHO+11TBD-R
MHO+11TBG
MHO+11TBG-R
MHO+11TCD
MHO+11TCD-R
MHO+11TCG
MHO+11TCG-R
MHO+11TDD
MHO+11TDD-R
MHO+11TDG
MHO+11TDG-R
MHO+11TFD
MHO+11TFD-R
MHO+11TFG
MHO+11TFG-R
MHO+11TGD
MHO+11TGD-R
MHO+11TGG
MHO+11TGG-R
MHO+12TAAD
MHO+12TAAD-R
MHO+12TAAG
MHO+12TAAG-R
MHO+12TAD
MHO+12TAD-R
MHO+12TAG
MHO+12TAG-R
MHO+12TBD
MHO+12TBD-R
MHO+12TBG
MHO+12TBG-R
MHO+12TCD
MHO+12TCD-R
MHO+12TCG
| 14 pin DIP, 5.0 Volt, Hcmos/ttl, Clock Oscillator |
