| |
MMFR-29C516E-31SB
| 16 Bit Flow Through EDAC Error Detection And Correction unit |
MMFT107
| Power MOSFET 250 MA, 200 Volts |
MMFT107
| Tmos Power Fet N-channel: 200v, 0.25a |
MMFT107T1
| Medium Power Field Effect Transistor |
MMFT107T1
| Power MOSFET 250 MA, 200 Volts |
MMFT107T1
| Power MOSFET 250 MA, 200 Volts, Package: SOT-223 (TO-261), Pins=4 |
MMFT107T1D
| Power Mosfet 250 mA, 200 Volts |
MMFT107T3
| Power MOSFET 250 MA, 200 Volts, Package: SOT-223 (TO-261), Pins=4 |
MMFT108T1
| TmosFET Transistor N-channel - Enhancement |
MMFT1N10
| Medium Power TMOS FET 1 AMP 100 Volts |
MMFT1N10E
| Medium Power TmosFET 1 Amp 100 Volts |
MMFT1N10E
| Medium Power Field Effect Transistor N-channel Enhancement Mode Silicon Gate Tmos E-FET Sot-223 For Surface Mount: 100v, 1a |
MMFT1N10ET1
MMFT1N10ET3
| |
MMFT2406
| Power MOSFET 700 MA, 240 Volts |
MMFT2406
| Tmos Power Fet N-channel: 240v, 0.7a |
MMFT2406T
| Medium Power TMOS FET 700 mA 240 Volts |
MMFT2406T1
| Medium Power Field Effect Transistor |
MMFT2406T1
| Power MOSFET 700 MA, 240 Volts |
MMFT2406T1
| Power MOSFET 700 MA, 240 Volts, Package: SOT-223 (TO-261), Pins=4 |
MMFT2406T1G
| Power MOSFET 700 MA, 240 Volts |
MMFT2406T3
| Power MOSFET 700 MA, 240 Volts, Package: SOT-223 (TO-261), Pins=4 |
MMFT2406T3G
| Power MOSFET 700 MA, 240 Volts |
MMFT2955E
| Medium Power Field Effect Transistor |
MMFT2955E
| Medium Power Field Effect Transistor P-channel Enhancement Mode Silicon Gate Tmos E-FET Sot-223 For Surface Mount: -60v, -1.2a |
MMFT2955ET1
MMFT2955ET3
| Power MOSFET 1 Amp, 60 Volts, Package: SOT-223 (TO-261), Pins=4 |
MMFT2N02EL
| Medium Power Field Effect Transistor N-channel Enhancement Mode Silicon Gate Tmos E-FET Sot-223 For Surface Mount: 20v, 1.6a |
MMFT2N02ELT1
| Power MOSFET 2 Amps, 20 Volts, Package: SOT-223 (TO-261), Pins=4 |
MMFT2N25E
| Tmos Power Fet 2.0 Amperes 250 Volts |
MMFT2N25E
| Tmos E-FET(tm) High Energy Power Fet: N-channel Enhancement-mode Silicon Gate: 250v, 2a |
MMFT3055E
| Medium Power TmosFET 1.7 Amp 60 Volts |
MMFT3055E
| Medium Power Field Effect Transistor N-channel Enhancement Mode Silicon Gate Tmos E-FET Sot-223 For Surface Mount: 60v, 1.7a |
MMFT3055EL
| Medium Power Logic Level TmosFET 1.5 Amp 60 Volts |
MMFT3055ET1
| Replacement Part: NTF3055-100T1, NTF3055-160T1, Package: SOT-223 (TO-261), Pins=4 |
MMFT3055V
| SOT-223 For Surface Mount |
MMFT3055V
| 1.7 Amp Tmos V Sot-223, VDSS 60 |
MMFT3055VL
| SOT-223 For Surface Mount |
MMFT3055VL
| 1.5 Amp Tmos V Sot-223, VDSS 60 |
MMFT3055VLT1
MMFT3055VLT3
MMFT3055VLT3-LF
| Replace With NTF3055L108T1 or NTF3055L175T1, Package: SOT-223 (TO-261), Pins=4 |
MMFT3055VT1
MMFT3055VT3
| Replace With NTF3055-100T1 or NTF3055-160T1, Package: SOT-223 (TO-261), Pins=4 |
MMFT5P03HD
| Tmos P-channel Field Effect Transistor |
MMFT5P03HDT1
MMFT5P03HDT3
| Power MOSFET 5 Amps, 30 Volts , Package: SOT-223 (TO-261), Pins=4 |
MMFT6N03HD
| Tmos Power 6.0 Amperes 30 Volts |
MMFT960
| Power MOSFET 300 MA, 60 Volts |
MMFT960
| Tmos Power Fet N-channel: 600v, 0.3a |
MMFT960T1
| Medium Power Field Effect Transistor |
MMFT960T1
| Power MOSFET 300 MA, 60 Volts |
MMFT960T1
| Power MOSFET 300 MA, 60 Volts, Package: SOT-223 (TO-261), Pins=4 |
MMFT960T1G
| Power MOSFET 300 MA, 60 Volts |
MMFTN123
MMFTN138
| N-channel Logic Level Enhancement Mode Field Effect Transistor |
MMFTN170
| N-channel Enhancement Mode Field Effect Transistor |
MMFTN20
| N-channel Enhancement Vertical D-mos Transistor |
MMFTP84
| P-channel Enhancement Mode Vertical D-mos Transistor |
MMG
| Metallized Polyester FILM Capacitors |
MMG05N60D
| Igbt N-channel (0.5a, 600v) |
MMG1001NT1
| * 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV Integrated Forward Amplifier Module |
MMG1001NT1
| Gallium Arsenide CATV Integrated Amplifier Module |
MMG1001R2
| MMG1001R2 870 Mhz, 18.5 DB Gain, 132-Channel Catv Integrated Amplifier Module |
MMG1001T1
| Gallium Arsenide CATV Integrated Amplifier Module |
MMG12-2.5
| Psu 12v 2.5a Enclosed |
MMG15-2
| Psu 15v 2a Enclosed |
MMG15-4
| Psu 15v 4a Enclosed |
MMG15241HT1
| Enhancement Mode PHEMT
Technology (E--pHEMT)
The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed
in a SOT--89 standard plastic package. It is ideal for Cellular, PCS, LTE,
TD--SCDMA, W--CDMA base station, wireless LAN and othe... |
MMG2001R2
| MMG2001R2 870 Mhz, 19.5 DB Gain, 132-Channel Catv Integrated Amplifier Module |
MMG2001T1
| Gallium Arsenide CATV Integrated Amplifier Module |
MMG20271HT1
| Enhancement Mode PHEMT
Technology (E--pHEMT)
The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed
in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE,
TD--SCDMA, W--CDMA base station, wireless LAN and othe... |
MMG2401NR2
| Indium Gallium Phosphorus HBT - WLAN Power Amplifier |
MMG3001NT1
MMG3001NT1_08
MMG3002NT1
MMG3002NT1_08
MMG3003NT1
MMG3003NT1_08
MMG3004NT1
| Heterojunction Bipolar Transistor Technology (ingap HBT) |
MMG3004NT1
| Heterojunction Bipolar Transistor Technology (InGaP HBT) Heterojunction Bipolar Transistor Technology (InGaP HBT) |
MMG3004NT1_08
MMG3005NT1
| Heterojunction Bipolar Transistor Technology (ingap HBT) |
MMG3005NT1
| Heterojunction Bipolar Transistor Technology (InGaP HBT) Heterojunction Bipolar Transistor Technology (InGaP HBT) |
MMG3005NT1_08
MMG3006NT1
MMG3006NT1_08
| Heterojunction Bipolar Transistor Technology (ingap HBT) |
MMG3007NT1
MMG3007NT1_08
MMG3008NT1
MMG3008NT1_08
MMG3009NT1
MMG3009NT1_08
MMG3010NT1
MMG3010NT1_08
MMG3011NT1
| Heterojunction Bipolar Transistor (ingap HBT) |
MMG3012NT1
MMG3012NT1_08
MMG3013NT1
MMG3013NT1_08
| Heterojunction Bipolar Transistor Technology (ingap HBT) |