Semiconductors list from MMFR-29C516E-31SB to MMG3013NT1_08



MMFR-29C516E-31SB
16 Bit Flow Through EDAC Error Detection And Correction unit
MMFT107
Power MOSFET 250 MA, 200 Volts
MMFT107
Tmos Power Fet N-channel: 200v, 0.25a
MMFT107T1
Medium Power Field Effect Transistor
MMFT107T1
Power MOSFET 250 MA, 200 Volts
MMFT107T1
Power MOSFET 250 MA, 200 Volts, Package: SOT-223 (TO-261), Pins=4
MMFT107T1D
Power Mosfet 250 mA, 200 Volts
MMFT107T3
Power MOSFET 250 MA, 200 Volts, Package: SOT-223 (TO-261), Pins=4
MMFT108T1
TmosFET Transistor N-channel - Enhancement
MMFT1N10
Medium Power TMOS FET 1 AMP 100 Volts
MMFT1N10E
Medium Power TmosFET 1 Amp 100 Volts
MMFT1N10E
Medium Power Field Effect Transistor N-channel Enhancement Mode Silicon Gate Tmos E-FET Sot-223 For Surface Mount: 100v, 1a
MMFT1N10ET1
MMFT1N10ET3
MMFT2406
Power MOSFET 700 MA, 240 Volts
MMFT2406
Tmos Power Fet N-channel: 240v, 0.7a
MMFT2406T
Medium Power TMOS FET 700 mA 240 Volts
MMFT2406T1
Medium Power Field Effect Transistor
MMFT2406T1
Power MOSFET 700 MA, 240 Volts
MMFT2406T1
Power MOSFET 700 MA, 240 Volts, Package: SOT-223 (TO-261), Pins=4
MMFT2406T1G
Power MOSFET 700 MA, 240 Volts
MMFT2406T3
Power MOSFET 700 MA, 240 Volts, Package: SOT-223 (TO-261), Pins=4
MMFT2406T3G
Power MOSFET 700 MA, 240 Volts
MMFT2955E
Medium Power Field Effect Transistor
MMFT2955E
Medium Power Field Effect Transistor P-channel Enhancement Mode Silicon Gate Tmos E-FET Sot-223 For Surface Mount: -60v, -1.2a
MMFT2955ET1
MMFT2955ET3
Power MOSFET 1 Amp, 60 Volts, Package: SOT-223 (TO-261), Pins=4
MMFT2N02EL
Medium Power Field Effect Transistor N-channel Enhancement Mode Silicon Gate Tmos E-FET Sot-223 For Surface Mount: 20v, 1.6a
MMFT2N02ELT1
Power MOSFET 2 Amps, 20 Volts, Package: SOT-223 (TO-261), Pins=4
MMFT2N25E
Tmos Power Fet 2.0 Amperes 250 Volts
MMFT2N25E
Tmos E-FET(tm) High Energy Power Fet: N-channel Enhancement-mode Silicon Gate: 250v, 2a
MMFT3055E
Medium Power TmosFET 1.7 Amp 60 Volts
MMFT3055E
Medium Power Field Effect Transistor N-channel Enhancement Mode Silicon Gate Tmos E-FET Sot-223 For Surface Mount: 60v, 1.7a
MMFT3055EL
Medium Power Logic Level TmosFET 1.5 Amp 60 Volts
MMFT3055ET1
Replacement Part: NTF3055-100T1, NTF3055-160T1, Package: SOT-223 (TO-261), Pins=4
MMFT3055V
SOT-223 For Surface Mount
MMFT3055V
1.7 Amp Tmos V Sot-223, VDSS 60
MMFT3055VL
SOT-223 For Surface Mount
MMFT3055VL
1.5 Amp Tmos V Sot-223, VDSS 60
MMFT3055VLT1
MMFT3055VLT3
MMFT3055VLT3-LF
Replace With NTF3055L108T1 or NTF3055L175T1, Package: SOT-223 (TO-261), Pins=4
MMFT3055VT1
MMFT3055VT3
Replace With NTF3055-100T1 or NTF3055-160T1, Package: SOT-223 (TO-261), Pins=4
MMFT5P03HD
Tmos P-channel Field Effect Transistor
MMFT5P03HDT1
MMFT5P03HDT3
Power MOSFET 5 Amps, 30 Volts , Package: SOT-223 (TO-261), Pins=4
MMFT6N03HD
Tmos Power 6.0 Amperes 30 Volts
MMFT960
Power MOSFET 300 MA, 60 Volts
MMFT960
Tmos Power Fet N-channel: 600v, 0.3a
MMFT960T1
Medium Power Field Effect Transistor
MMFT960T1
Power MOSFET 300 MA, 60 Volts
MMFT960T1
Power MOSFET 300 MA, 60 Volts, Package: SOT-223 (TO-261), Pins=4
MMFT960T1G
Power MOSFET 300 MA, 60 Volts
MMFTN123
MMFTN138
N-channel Logic Level Enhancement Mode Field Effect Transistor
MMFTN170
N-channel Enhancement Mode Field Effect Transistor
MMFTN20
N-channel Enhancement Vertical D-mos Transistor
MMFTP84
P-channel Enhancement Mode Vertical D-mos Transistor
MMG
Metallized Polyester FILM Capacitors
MMG05N60D
Igbt N-channel (0.5a, 600v)
MMG1001NT1
* 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV Integrated Forward Amplifier Module
MMG1001NT1
Gallium Arsenide CATV Integrated Amplifier Module
MMG1001R2
MMG1001R2 870 Mhz, 18.5 DB Gain, 132-Channel Catv Integrated Amplifier Module
MMG1001T1
Gallium Arsenide CATV Integrated Amplifier Module
MMG12-2.5
Psu 12v 2.5a Enclosed
MMG15-2
Psu 15v 2a Enclosed
MMG15-4
Psu 15v 4a Enclosed
MMG15241HT1
Enhancement Mode PHEMT Technology (E--pHEMT) The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT--89 standard plastic package. It is ideal for Cellular, PCS, LTE, TD--SCDMA, W--CDMA base station, wireless LAN and othe...
MMG2001R2
MMG2001R2 870 Mhz, 19.5 DB Gain, 132-Channel Catv Integrated Amplifier Module
MMG2001T1
Gallium Arsenide CATV Integrated Amplifier Module
MMG20271HT1
Enhancement Mode PHEMT Technology (E--pHEMT) The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE, TD--SCDMA, W--CDMA base station, wireless LAN and othe...
MMG2401NR2
Indium Gallium Phosphorus HBT - WLAN Power Amplifier
MMG3001NT1
MMG3001NT1_08
MMG3002NT1
MMG3002NT1_08
MMG3003NT1
MMG3003NT1_08
MMG3004NT1
Heterojunction Bipolar Transistor Technology (ingap HBT)
MMG3004NT1
Heterojunction Bipolar Transistor Technology (InGaP HBT) Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3004NT1_08
MMG3005NT1
Heterojunction Bipolar Transistor Technology (ingap HBT)
MMG3005NT1
Heterojunction Bipolar Transistor Technology (InGaP HBT) Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3005NT1_08
MMG3006NT1
MMG3006NT1_08
Heterojunction Bipolar Transistor Technology (ingap HBT)
MMG3007NT1
MMG3007NT1_08
MMG3008NT1
MMG3008NT1_08
MMG3009NT1
MMG3009NT1_08
MMG3010NT1
MMG3010NT1_08
MMG3011NT1
Heterojunction Bipolar Transistor (ingap HBT)
MMG3012NT1
MMG3012NT1_08
MMG3013NT1
MMG3013NT1_08
Heterojunction Bipolar Transistor Technology (ingap HBT)
 
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