NE5241D
NE5241N
| |
NE527
NE527D
NE527N
| NE527; Voltage Comparator;; Package: SOT108-1 (SO14), SOT27-1 (DIP14) |
NE529
NE529D
NE529N
NE529NB
| NE529; Voltage Comparator;; Package: SOT108-1 (SO14), SOT27-1 (DIP14) |
NE531
NE531FE
NE531N
| NE/SE531; High Slew Rate Operational Amplifier |
NE532
| NE/SA/SE532/LM258/358/A/2904; Low Power Dual Operational Amplifiers;; Package: SOT96-1 (SO8), SOT97-1 (DIP8) |
NE532
| Low Power Dual Operational Amplifiers |
NE532D
NE532N
NE532NB
| NE/SA/SE532/LM258/358/A/2904; Low Power Dual Operational Amplifiers;; Package: SOT96-1 (SO8), SOT97-1 (DIP8) |
NE536
| FET Input Operational Amplifier |
NE538
NE538D
NE538FE
NE538N
| High Slew Rate op Amp |
NE540
NE540L
| Linear Integrated Circuits |
NE5410
NE5410F
| NE/SE5410; 10-Bit High-speed Multiplying D/A Converter |
NE542
NE542N
| DUAL LOW - Noise Preamplifier |
NE544
NE544D
NE544N
| Servo Amplifier |
NE5500179A
NE5500179A-T1
| 4.8 V Operation Silicon RF Power MOSFET For GSM1800 And GSM1900 Transmission Amplifiers |
NE5510179A
NE5510179A-T1
| 3.5 V Operation Silicon RF Power MOSFET For 1.9 GHZ Transmission Amplifiers |
NE5510279A
| 3.5 V Operation Silicon RF Power MOSFET For GSM1800 Transmission Amplifiers |
NE5510279A
NE5510279A-T1
| 3.5 V Operation Silicon RF Power Mosfet FOR Gsm1800 Transmission Amplifiers |
NE5511279A
| NEC's 7.5 V UHF Band RF Power Silicon LD-MOSFET
NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured
using NEC's NEWMOS1 techn... |
NE5511279A-T1
| NECS 7.5 V UHF BAND RF Power Silicon Ld-mos FET |
NE5511279A-T1-A
| NEC's 7.5 V UHF Band RF Power Silicon LD-MOSFET
NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured
using NEC's NEWMOS1 techn... |
NE5511279A-T1A
| NECS 7.5 V UHF BAND RF Power Silicon Ld-mos FET |
NE5511279A-T1A-A
| NEC's 7.5 V UHF Band RF Power Silicon LD-MOSFET
NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured
using NEC's NEWMOS1 techn... |
NE5512
NE5512D
NE5512N
| NE/SA/SE5512; Dual High-performance Operational Amplifier |
NE5514
NE5514D
NE5514N
NE5514NB
| NE/SE5514; Quad High-performance Operational Amplifier |
NE5517
| NE5517/NE5517A/AU5517; Dual Operational Transconductance Amplifier;; Package: SOT109-1 (SO16), SOT38-4 (DIP16) |
NE5517A
| NE5517/NE5517A/AU5517; Dual Operational Transconductance Amplifier;; Package: SOT38-4 (DIP16) |
NE5517AN
| NE5517/NE5517A/AU5517; Dual Operational Transconductance Amplifier;; Package: SOT109-1 (SO16), SOT38-4 (DIP16) |
NE5517ANG
| Dual Operational Transconductance Amplifier |
NE5517D
| NE5517/NE5517A/AU5517; Dual Operational Transconductance Amplifier;; Package: SOT109-1 (SO16), SOT38-4 (DIP16) |
NE5517DG
NE5517DR2
NE5517DR2G
| Dual Operational Transconductance Amplifier |
NE5517N
| NE5517/NE5517A/AU5517; Dual Operational Transconductance Amplifier;; Package: SOT109-1 (SO16), SOT38-4 (DIP16) |
NE5517NG
| Dual Operational Transconductance Amplifier |
NE5520279A
| 3.2 V, 2 W, L&s Band Medium Power Silicon LD-MOSFET(264) |
NE5520279A
| NEC's 3.2 V, 2 W, L&S Band Medium Power Silicon LD-MOSFET
NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power amplifier for mobile and fixed wireless applications. Die are manufactured
using NEC'... |
NE5520279A-T1
NE5520279A-T1-A
| NECs 3.2v, 3W, L/S BAND Medium Power Silicon Ld-mosfet |
NE5520379A
NE5520379A-T1A
| 3.2 V, 3 W, L&s Band Medium Power Silicon LD-MOSFET(261) |
NE5520379A-T1A-A
| NECs 3.2v, 3W, L/S BAND Medium Power Silicon Ld-mosfet |
NE5521
NE5521D
NE5521N
| NE/SA5521; LVDT Signal Conditioner;; Package: SOT102-4 (DIP18), SOT162-1 (SO16) |
NE552R479A
| 3.0 V, 0.25 W, L&s Band Medium Power Silicon LD-MOSFET(262) |
NE552R479A
| NEC's 3.0 V, 0.25 W, L&S Band Medium Power Silicon LD-MOSFET
NEC's NE552R479A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the transmission power amplifier for mobile and fixed wireless applications. Die are manufac... |
NE552R479A-T1A
| 3.0 V, 0.25 W, L&s Band Medium Power Silicon LD-MOSFET(262) |
NE552R479A-T1A-A
| NECs 3.0 V, 0.25 W L&s-band Medium Power Silicon Ld-mosfet |
NE552R679A
NE552R679A-T1
NE552R679A-T1A
| 3.0 V Operation Silicon RF Power Ld-mos FET FOR 460 MHz 0.6 W Transmission Amplifiers |
NE5532
| Dual Operational Amplifier |
NE5532
| NE/SA/SE5532/5532A; Internally-compensated Dual Low Noise Operational Amplifier |
NE5532
| Dual Low-noise op Amps |
NE5532A
| NE/SA/SE5532/5532A; Internally-compensated Dual Low Noise Operational Amplifier |
NE5532A
| Dual Low-noise op Amps |
NE5532AD
| ti NE5532A, Dual Low-noise Operational Amplifier |
NE5532AD8
| NE/SA/SE5532/5532A; Internally-compensated Dual Low Noise Operational Amplifier;; Package: SOT96 (SO8) |
NE5532AD8G
NE5532AD8R2
NE5532AD8R2G
| Internally Compensated Dual Low Noise Operational Amplifier |
NE5532ADR
| ti NE5532A, Dual Low-noise Operational Amplifier |
NE5532AF
| Internally-compensated Dual Low Noise Operational Amplifier |
NE5532AFE
| NE/SA/SE5532/5532A; Internally-compensated Dual Low Noise Operational Amplifier |
NE5532AI
| Dual Low-noise op Amps |
NE5532AIP
| ti NE5532A, Dual Low-noise Operational Amplifier |
NE5532AN
| NE/SA/SE5532/5532A; Internally-compensated Dual Low Noise Operational Amplifier;; Package: SOT97-1 (DIP8) |
NE5532ANG
| Internally Compensated Dual Low Noise Operational Amplifier |
NE5532AP
NE5532APSR
| ti NE5532A, Dual Low-noise Operational Amplifier |
NE5532D
| NE5532 - Dual Operational Amplifier |
NE5532D
| NE/SA/SE5532/5532A; Internally-compensated Dual Low Noise Operational Amplifier |
NE5532D
| ti NE5532, Dual Low-noise High-speed Audio Operational Amplifier |
NE5532D8
| NE/SA/SE5532/5532A; Internally-compensated Dual Low Noise Operational Amplifier;; Package: SOT96 (SO8) |
