NE624N
NE625
NE625
NE625D
NE625DK
NE625N
NE627
NE627
NE627D
NE627DK
NE627N
NE630
NE630D
| |
NE630D
| Single Pole Double Throw (SPDT) Switch |
NE630N
| |
NE630N
| Single Pole Double Throw (SPDT) Switch |
NE64300
NE64310
NE64320
| NPN Medium Power Microwave Transistor |
NE645
| Dolby Noise Reduction Circuit |
NE64535
| NPN Silicon LOW Noise RF Transistor |
NE645N
NE646
NE646N
| Dolby Noise Reduction Circuit |
NE64700
| NPN Silicon Microwave Transistor |
NE6500379
| 3W L, S-band Power GaAs Mesfet |
NE6500379A
| L, S-band Power GAAS MOS Fet |
NE6500379A
NE6500379A-EV
| 3w, L/s-band Medium Power GAAS MesFET |
NE6500379A-T1
| L, S-band Power GAAS MOS Fet |
NE6500379A-T1
| 3w, L/s-band Medium Power GAAS MesFET |
NE6500496
| L/s Band 4W po GAAS Fet |
NE6500496
| L/s Band Medium Power GAAS MesFET |
NE6500496_00
| L&S BAND Medium Power GaAs Mesfet |
NE650103M
| 10 W, L & S-band Power GAAS MESFET(203) |
NE650103M
NE650103M-A
| 10 W, L & S-Band Power GaAs MESFET
NEC's NE650103M is a 10 W GaAs MESFET designed for
PCS, W-CDMA, WLL transmitter applications. It is capable of
delivering 10 Watts of output power with high linear gain, high
efficiency and excellent linearity. ... |
NE6501077
| L/s Band 10W PogaasFET |
NE6501077
| L/s Band Medium Power GAAS MesFET |
NE6501077_00
| L/S BAND Medium Power GaAs Mesfet |
NE650R279A
NE650R279A-T1
| 0.2 W l, S-band Power GAAS Mes Fet |
NE650R479A
NE650R479A-T1
| 0.4 W l, S-band Power GAAS Mes Fet |
NE6510179
| NECs 3W, L&s-band Medium Power GaAs Hj-fet |
NE6510179A
| L-band Power GAAS Hj-FET |
NE6510179A
| 1w, L/s-band Medium Power GAAS Hj-FET |
NE6510179A-A
| NECs 3W, L&s-band Medium Power GaAs Hj-fet |
NE6510179A-T1
| L-band Power GAAS Hj-FET |
NE6510179A-T1
| 1w, L/s-band Medium Power GAAS Hj-FET |
NE6510179A-T1-A
| NECs 3W, L&s-band Medium Power GaAs Hj-fet |
NE6510379A
NE6510379A-T1
| 3 W L-band Power GAAS Hj-FET |
NE651R479A
| po GAAS Hj-FET |
NE651R479A
| 0.4w L & S-band Power GAAS Hj-FET |
NE651R479A-A
| Medium Power GaAs Hj-fet |
NE651R479A-T1
| po GAAS Hj-FET |
NE651R479A-T1
| 0.4w L & S-band Power GAAS Hj-FET |
NE651R479A-T1-A
| Medium Power GaAs Hj-fet |
NE661M04
| NPN Epitaxial Silicon Transistor |
NE661M04
| NPN Silicon High Frequency Transistor |
NE661M04-T2
| NPN Epitaxial Silicon Transistor |
NE661M04-T2
| NPN Silicon High Frequency Transistor |
NE661M04-T2-A
| NPN Silicon HIGH Frequency Transistor |
NE662M04
NE662M04-T2
| NPN Silicon RF Transistor(379) |
NE662M04-T2-A
| NPN Silicon HIGH Frequency Transistor |
NE662M16
| NPN Silicon High Frequency Transistor(333) |
NE662M16
| NPN Silicon High Frequency Transistor
NEC's NE662M16 is fabricated using NEC's UHS0 25 GHz fT
wafer process. With a typical transition frequency of 25 GHz
the NE662M16 is usable in applications from 100 MHz to over
10 GHz. The NE662M16 provides e... |
NE662M16-T3
NE662M16-T3-A
| NPN Silicon HIGH Frequency Transistor |
NE663M04
NE663M04-T2
| NPN Silicon High Frequency Transistor |
NE663M04-T2-A
| NPN Silicon HIGH Frequency Transistor |
NE664M04
| Medium Power NPN Silicon High Frequency Transistor(327) |
NE664M04
| NEC's Medium Power NPN Silicon High Frequency Transistor
NEC's NE664M04 is fabricated using NEC's state-of-the-art
UHS0 25 GHz fT wafer process. With a transition frequency of
20 GHz, the NE664M04 is usable in applications from 100 MHz
to over 3 ... |
NE664M04-T2
| Medium Power NPN Silicon HIGH Frequency Transistor |
NE664M04-T2-A
| NEC's Medium Power NPN Silicon High Frequency Transistor
NEC's NE664M04 is fabricated using NEC's state-of-the-art
UHS0 25 GHz fT wafer process. With a transition frequency of
20 GHz, the NE664M04 is usable in applications from 100 MHz
to over 3 ... |
NE66719
| Nec's NPN Silicon High Frequency Transistor(310) |
NE66719-T1
| Nec 's NPN Silicon High Frequency Transistor(310) |
NE67300
NE67383
| LOW Noise Ku-K BAND GaAs Mesfet FOR HI REL Applications ONLY |
NE67400
| L to ku Band Low Noise Amplifier N-channel GAAS MesFET |
NE67400
| NECs L TO Ku BAND LOW Noise Amplifier N-channel GaAS Mesfet |
NE67483B
| L to ku Band Low Noise Amplifier N-channel GAAS MesFET |
NE67483B
| NECs L TO Ku BAND LOW Noise Amplifier N-channel GaAS Mesfet |
NE677M04
| Medium Power NPN Silicon High Frequency Transistor(318) |
NE677M04
| NEC's NE677M04 is fabricated using NEC's HFT3 wafer
process. With a transition frequency of 15 GHz, the NE677M04
is usable in applications from 100 MHz to 3 GHz. The NE677M04
provides P1dB of 15 dBm, even with low voltage and low
current, making ... |
NE677M04-T2
| Medium Power NPN Silicon High Frequency Transistor(318) |
NE677M04-T2-A
| NEC's NE677M04 is fabricated using NEC's HFT3 wafer
process. With a transition frequency of 15 GHz, the NE677M04
is usable in applications from 100 MHz to 3 GHz. The NE677M04
provides P1dB of 15 dBm, even with low voltage and low
current, making ... |
NE678M04
| Medium Power NPN Silicon High Frequency Transistor(319) |
NE678M04
| NEC's NE678M04 is fabricated using NEC's HFT3 wafer
process. With a transition frequency of 12 GHz, the NE678M04
is usable in applications from 100 MHz to 3 GHz. The NE678M04
provides P1dB of 18 dBm, even with low voltage and low
current, making ... |
NE678M04-T2
| Medium Power NPN Silicon High Frequency Transistor(319) |
NE678M04-T2-A
| NEC's NE678M04 is fabricated using NEC's HFT3 wafer
process. With a transition frequency of 12 GHz, the NE678M04
is usable in applications from 100 MHz to 3 GHz. The NE678M04
provides P1dB of 18 dBm, even with low voltage and low
current, making ... |
NE680
| NPN Silicon High Frequency Transistor |
NE680
| NECs NPN Silicon HIGH Frequency Transistor |
NE68000
| NPN Silicon High Frequency Transistor |
NE68000
| NECs NPN Silicon HIGH Frequency Transistor |
NE68018
| NPN Silicon High Frequency Transistor |
NE68018-T1
| NECs NPN Silicon HIGH Frequency Transistor |
