| |
NES-50-48
NES-50-5
| 50W Single Output Switching Power Supply |
NES-75
NES-75-12
NES-75-15
NES-75-24
NES-75-48
NES-75-5
| 75W Single Output Switching Power Supply |
NES120
| DIN rail Mountable type 30 ~ 240W |
NES120-1
| Psu Din Rail 120w |
NES120-24
| DIN rail Mountable type 30 ~ 240W |
NES1720P-140
| 140w L-band Twin Power GAAS MesFET |
NES1821B-30
| 30w L-band Power GAAS Fet N-channel GAAS Mes Fet |
NES1821B-30
| 30w L-band Power GAAS MesFET |
NES1821P-50
| 50w L-band Push-pull Power GAAS MesFET |
NES1823P-100
| 100w L-band Push-pull Power GAAS MesFET |
NES1823P-100
| 100w L-band Twin Power GAAS MesFET |
NES1823P-140
NES1823P-30
| 100w L-band Push-pull Power GAAS MesFET |
NES1823P-30
| 30w L-s Band Push-pull Power GAAS MesFET |
NES1823P-45
NES1823P-50
| 100w L-band Push-pull Power GAAS MesFET |
NES1823P-70
| 70w L-s Band Twin Power GAAS MesFET |
NES240-1
| Psu Din Rail 240w |
NES240-24
NES240-28
NES240-48
| DIN rail Mountable type 30 ~ 240W |
NES2427P-140
| 140w S-band Twin Power GAAS MesFET |
NES2427P-30
| 30w S-band Twin Power GAAS MesFET |
NES2427P-45
| 45 W S-band Push-pull Power GAAS Mes Fet |
NES2427P-45
| 45w S-band Twin Power GAAS MesFET |
NES2427P-50
| 50w S-band Twin Power GAAS MesFET |
NES2427P-60
| S-band 60W po GAAS Fet |
NES2427P-60
| Band Partially Matched Twin Power GAAS MesFET |
NES2427P-70
| 70w S-band Twin Power GAAS MesFET |
NES2527B-30
| 30 W S-band Power GAAS Fet N-channel GAAS Mes Fet |
NES2527B-30
| S-band Partially Matched Power GAAS MesFET |
NES30-24
| DIN rail Mountable type 30 ~ 240W |
NES60-1
| Psu Din Rail 60w |
NES60-24
| DIN rail Mountable type 30 ~ 240W |
NESA064T
| Amber LED |
NESB007AT
NESB008AT
NESB017T
NESB021T
NESB064T
NESB426CT
NESB505CT
| TYPE BLUE LED |
NESE021T
| Bluish-green LED |
NESG007AT
| Green LED |
NESG021T
NESG064T
| TYPE Green LED |
NESG2021M05
| Nec's NPN Sige High Frequency Transistor(336) |
NESG2021M05
NESG2021M05-T1-A
| NEC's NPN SiGe High Frequency Transistor
NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and... |
NESG2021M16
| NEC's NPN SiGe High Frequency Transistor
NEC's NESG2021M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and... |
NESG2021M16-A
NESG2021M16-T3
NESG2021M16-T3-A
| NPN SiGe RF Transistor FOR LOW Noise, High-gain Amplification 6-pin Lead-less Minimold (m16, 1208 PKG) |
NESG2030M04
| NPN Sige High Frequency Transistor(329) |
NESG2030M04
NESG2030M04-A
NESG2030M04-T2
NESG2030M04-T2-A
| NPN SiGe RF Transistor FOR LOW Noise, High-gain Amplification 6-pin Lead-less Minimold (m16, 1208 PKG) |
NESG2031M05
| Nec's NPN Sige High Frequency Transistor(337) |
NESG2031M05-T1
NESG2031M05-T1-A
| NPN SiGe RF Transistor FOR LOW Noise, High-gain Amplification 6-pin Lead-less Minimold (m16, 1208 PKG) |
NESG2031M16
| NEC's NPN SiGe High Frequency Transistor
NEC's NESG2031M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and... |
NESG2031M16-A
NESG2031M16-T3
NESG2031M16-T3-A
| NPN SiGe RF Transistor FOR LOW Noise, High-gain Amplification 6-pin Lead-less Minimold (m16, 1208 PKG) |
NESG204619
NESG204619-A
NESG204619-T1-A
| NEC's NPN SiGe Transistor for Low Noise, High-Gain Amplification
IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ
• HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSIST... |
NESG2046M33
NESG2046M33-A
NESG2046M33-T3-A
| FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• HIGH BREAKDOWN VOLTAGE TECHNOLOGY
FOR SIGE TRANSISTORS :
VCEO (absolute ma... |
NESG2101M05
| Nec's NPN Sige High Frequency Transistor(335) |
NESG2101M05-T1
NESG2101M05-T1-A
| NPN SiGe RF Transistor FOR Medium Output Power Amplification (125 mW) 6-pin Lead-less Minimold (m16, 1208 PKG) |
NESG2101M16
| NEC's NPN SiGe High Frequency Transistor
NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, an... |
NESG2101M16-A
NESG2101M16-T3
| NPN SiGe RF Transistor FOR Medium Output Power Amplification (125 mW) 6-pin Lead-less Minimold (m16, 1208 PKG) |
NESG2101M16-T3-A
| NEC's NPN SiGe High Frequency Transistor
NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, an... |
NESG2101M16_1
| NPN SiGe RF Transistor FOR Medium Output Power Amplification (125 mW) 6-pin Lead-less Minimold (m16, 1208 PKG) |
NESG210719
NESG210719
NESG210719-T1
| NPN SILICON GERMANIUM RF TRANSISTOR The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr. • 3-pin ultra super minimold package (19, 1608 PKG) |
NESG2107M33
NESG2107M33-A
NESG2107M33-T3-A
| NEC's NPN Silicon Transistor IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS • 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE |
NESG250134
NESG250134-AZ
NESG250134-T1-AZ
| NEC's NPN SiGe Transistor for Medium Output Power Amplification (800 mW) 3-Pin Power Minimold (34 Package)
THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (800 mW) AMPLIFICATION
PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm... |
NESG260234
NESG260234-T1
| NPN Silicon Germanium RF Transistor |
NESG270034
NESG270034-AZ
NESG270034-T1
NESG270034-T1-AZ
| NPN SiGe RF Transistor FOR Medium Output Power Amplification (2 W) 3-pin Power Minimold (34 PKG) |
