Semiconductors list from R1Q6A7236ABG60RB0 to R2005240



R1Q6A7236ABG60RB0
R1Q6A7236ABG60RS0
R1Q6A7236ABG60RT0
R1Q6A7236RBG-40RB0
R1Q6A7236RBG-40RS0
R1Q6A7236RBG-40RT0
R1Q6A7236RBG-50RB0
R1Q6A7236RBG-50RS0
R1Q6A7236RBG-50RT0
R1Q6A7236RBG-60RB0
R1Q6A7236RBG-60RS0
R1Q6A7236RBG-60RT0
36-mbit Qdr¢âii SRAM 2-word Burst
R1RP0404D
R1RP0404DGE-2LR
R1RP0404DGE-2PR
R1RP0408D
R1RP0408DGE-2LR
R1RP0408DGE-2PI
R1RP0408DGE-2PR
R1RP0408DI
Wide Temperature Range Version 4M High Speed SRAM (512-kword ¡¿ 8-bit)
R1RP0416D
R1RP0416DGE-2LR
R1RP0416DGE-2PR
R1RP0416DSB-2LR
R1RP0416DSB-2PR
4M High Speed SRAM (256-kword X 16-bit)
R1RW0404D
R1RW0404DGE-2LR
R1RW0404DGE-2PR
R1RW0408D
R1RW0408DGE-2LR
R1RW0408DGE-2PI
R1RW0408DGE-2PR
R1RW0408DI
Wide Temperature Range Version 4M High Speed SRAM (512-kword ¡¿ 8-bit)
R1RW0416D
R1RW0416DGE-2LR
R1RW0416DGE-2PI
R1RW0416DGE-2PR
R1RW0416DI
R1RW0416DSB-2LR
R1RW0416DSB-2PI
R1RW0416DSB-2PR
4M High Speed SRAM (256-kword x 16-bit)
R1WV3216R
R1WV3216RBG-7S
R1WV3216RBG-7SI
R1WV3216RBG-7SR
R1WV3216RBG-7SW
R1WV3216RBG-8S
R1WV3216RBG-8SI
R1WV3216RBG-8SR
R1WV3216RBG-8SW
R1WV3216RSD-7S
R1WV3216RSD-7SI
R1WV3216RSD-7SR
R1WV3216RSD-7SW
R1WV3216RSD-8S
R1WV3216RSD-8SI
R1WV3216RSD-8SR
R1WV3216RSD-8SW
R1WV3216R_08
32Mb Advanced Lpsram (2M Wordx16bit)
R1WV6416R
R1WV6416RBG-5SI
R1WV6416RBG-5SR
R1WV6416RBG-7SI
R1WV6416RBG-7SR
R1WV6416RSA-5SI
R1WV6416RSA-5SR
R1WV6416RSA-7SI
R1WV6416RSA-7SR
R1WV6416RSD-5SI
R1WV6416RSD-5SR
R1WV6416RSD-7SI
R1WV6416RSD-7SR
64Mb Advanced Lpsram (4M word x 16bit / 8M word x 8bit)
R1XXXF
500 Milliamp High Vage Fast Recovery Silicon Rectifier 1200 to 2000v
R20
Silicon Power Rectifier
R2000
2000V; 30A High Voltage Rectifier
R2000
2000 V, 200 ma High Voltage Silicon Rectifier
R2000
2000 V, 200 MA, High Voltage Silicon Rectifier
R2000
Package Type : DO-41, if : 500mA, VRM : 2000V
R2000
High Voltage Silicon Rectifier. Max Recurrent Peak Reverse Voltage 2000V, Max RMS Voltage 1400V, Max DC Blocking Voltage 2000V. Max Average Forward Rectified Current 200mA at Ta=50degC.
R2000
Leaded (Thru-Hole) High Voltage Rectifier
R2000
R2000
High Voltage Silicon Rectifier
R2000
High Voltage Silicon Rectifier. Maximum Recurrent Peak Reverse Voltage 2000 V. Maximum Average Forward Rectified Current 200 MA.
R2000-B
R2000-T
0.2A,2000V,STD,DO-41,HIGH Voltage
R2000F
2000V; 30A High Voltage Rectifier
R2000F
2000 V, 200 ma High Voltage Fast Recovery Rectifier
R2000F
2000 V, 200 MA, High Voltage Silicon Rectifier
R2000F
Package Type : DO-41, if : 500mA, VRM : 2000V
R2000F
500 Milliamp High Vage Fast Recovery Silicon Rectifier 1200 to 2000v
R2000F
High Voltage Fast Recovery Rectifier. Max Recurrent Peak Reverse Voltage 2000V, Max RMS Voltage 1400V, Max DC Blocking Voltage 2000V. Max Average Forward Rectified Current 200mA at Ta=50degC.
R2000F
Short Protection Rectifier - Throughhole
R2000F
R2000F
High Voltage Fast Recovery Rectifier. Maximum Recurrent Peak Reverse Voltage 2000 V. Maximum Average Forward Rectified Current 200 MA.
R2000F-B
R2000F-T
0.2A,2000V,500ns,DO-41,HIGH Voltage
R2000FPT
R2000PT
Silicon Rectifier
R2005200P12
GaAs Reverse, 5 - 200mhz, 20.0db typ. Gain @ 200mhz, 360ma max. @ 12vdc
R2005240
GaAs Reverse, 5 - 200mhz, 24.2db typ. Gain @ 200mhz, 360ma max. @ 12vdc
 
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