Semiconductors list from W3E16M64S-266BI to W3E32M72SR-250SBC



W3E16M64S-266BI
W3E16M64S-266BM
16mx72 Registered DDR Sdram
W3E16M64S-XBX
Organization = 16Mx64 ;; Speed MHZ = 200-266 ;; Volt = 2.5 ;; Package = 219 Pbga ;;
W3E16M72S
Organization = 16Mx72 ;; Speed MHZ = 200-266 ;; Volt = 2.5 ;; Package = 219 Pbga ;;
W3E16M72S-200BC
W3E16M72S-200BI
W3E16M72S-200BM
W3E16M72S-250BC
W3E16M72S-250BI
W3E16M72S-250BM
W3E16M72S-266BC
W3E16M72S-266BI
W3E16M72S-266BM
16mx72 Registered DDR Sdram
W3E16M72S-XBX
Organization = 16Mx72 ;; Speed MHZ = 200-266 ;; Volt = 2.5 ;; Package = 219 Pbga ;;
W3E16M72SR
Organization = 16Mx72 ;; Speed MHZ = 200-250 ;; Volt = 2.5 ;; Package = 219 Pbga ;;
W3E16M72SR-200BC
W3E16M72SR-200BI
W3E16M72SR-200BM
W3E16M72SR-225BC
W3E16M72SR-225BI
W3E16M72SR-225BM
W3E16M72SR-266BC
W3E16M72SR-266BI
W3E16M72SR-266BM
16mx72 Registered DDR Sdram
W3E16M72SR-XBX
Organization = 16Mx72 ;; Speed MHZ = 200-250 ;; Volt = 2.5 ;; Package = 219 Pbga ;;
W3E232M16S
2x32Mx16bit DDR SDRAM ]Bidirectional data strobe (DQS) transmitted/ re ceived with data, i.e., source-syn chro nous data capture (one per byte)  DQS edge-aligned with data for READs; centeraligned with data for WRITEs  Four internal banks for...
W3E232M16S-200STC
W3E232M16S-200STCG
W3E232M16S-200STI
W3E232M16S-200STIG
W3E232M16S-250STC
W3E232M16S-250STCG
W3E232M16S-250STI
W3E232M16S-250STIG
W3E232M16S-266STC
W3E232M16S-266STCG
W3E232M16S-266STI
W3E232M16S-266STIG
W3E232M16S-400STC
W3E232M16S-400STCG
W3E232M16S-400STI
W3E232M16S-400STIG
2x32mx16bit DDR Sdram
W3E232M16S-XSTX
2x32Mx16bit DDR SDRAM ]Bidirectional data strobe (DQS) transmitted/ re ceived with data, i.e., source-syn chro nous data capture (one per byte)  DQS edge-aligned with data for READs; centeraligned with data for WRITEs  Four internal banks for...
W3E32M64S-200BC
W3E32M64S-200BI
W3E32M64S-200BM
W3E32M64S-200SBC
W3E32M64S-200SBI
W3E32M64S-200SBM
W3E32M64S-250BC
W3E32M64S-250BI
W3E32M64S-250BM
W3E32M64S-250SBC
W3E32M64S-250SBI
W3E32M64S-250SBM
W3E32M64S-266BC
W3E32M64S-266BI
W3E32M64S-266BM
W3E32M64S-266SBC
W3E32M64S-266SBI
W3E32M64S-266SBM
W3E32M64S-333BC
W3E32M64S-333BI
W3E32M64S-333BM
W3E32M64S-333SBC
W3E32M64S-333SBI
W3E32M64S-333SBM
W3E32M64S-XBX
W3E32M64S-XSBX
32mx72 Registered DDR Sdram
W3E32M72S
32Mx72 DDR SDRAM The 256MByte (2Gb) DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM.
W3E32M72S-200BC
W3E32M72S-200BI
W3E32M72S-200BM
W3E32M72S-200SBC
W3E32M72S-200SBI
W3E32M72S-200SBM
W3E32M72S-250BC
W3E32M72S-250BI
W3E32M72S-250BM
W3E32M72S-250SBC
W3E32M72S-250SBI
W3E32M72S-250SBM
W3E32M72S-266BC
W3E32M72S-266BI
W3E32M72S-266BM
W3E32M72S-266SBC
W3E32M72S-266SBI
W3E32M72S-266SBM
W3E32M72S-333BC
W3E32M72S-333BI
W3E32M72S-333BM
W3E32M72S-333SBC
W3E32M72S-333SBI
W3E32M72S-333SBM
W3E32M72S-XBX
32mx72 Registered DDR Sdram
W3E32M72S-XSBX
32Mx72 DDR SDRAM The 256MByte (2Gb) DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM.
W3E32M72SR-200SBC
W3E32M72SR-200SBI
W3E32M72SR-200SBM
W3E32M72SR-250SBC
32mx72 Registered DDR Sdram
 
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