Part number: G105
VDRM(V): +/- 90
Breakover Voltage (60 Hz Sine Wave) (V): 95
On-State RMS Current Conduction Angle of 360° (A): 1.0
Peak Surge (Non-Repetitive) On-State Current One-cycle @60Hz (A): 20
Repetitive Peak Off-State Current @60Hz, V =VDRM (µA): 10
Dynamic Holding Current R =0.1 KW , 60Hz (mA): 100
Breakover Current 60Hz Sine Wave (µA): 200
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Part number: G1115
Photodiode Type: PN
Photodiode Spectral Response: Visible
Spectral Response Range (nm): 300 to 680
Peak Sensitivity Wavelength (nm): 640
Active Area Diameter or Length (mm): 1.30
Active Area Height (mm): 1.30
Sensitivity (A/W): 0.3000
Rise Time (ns): 1000
Operating Temperature (C): -30.00 to 80.00
Dark Current (nA): 0.0010
Noise Equivalent Power (W/Hz½): 1.50E-15
Photodiode Material: GaAsP
Photodiode Package: TO-18
Notes: GaAsP photodiode, diffusion type, borosilicate glass window
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Part number: G1116
Photodiode Type: PN
Photodiode Spectral Response: Visible
Spectral Response Range (nm): 300 to 680
Peak Sensitivity Wavelength (nm): 640
Active Area Diameter or Length (mm): 2.70
Active Area Height (mm): 2.70
Sensitivity (A/W): 0.3000
Rise Time (ns): 4000
Operating Temperature (C): -30.00 to 80.00
Dark Current (nA): 0.0025
Noise Equivalent Power (W/Hz½): 2.50E-15
Photodiode Material: GaAsP
Photodiode Package: TO-5
Notes: GaAsP photodiode, diffusion type, borosilicate glass window
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Part number: G1117
Photodiode Type: PN
Photodiode Spectral Response: Visible
Spectral Response Range (nm): 300 to 680
Peak Sensitivity Wavelength (nm): 640
Active Area Diameter or Length (mm): 5.60
Active Area Height (mm): 5.60
Sensitivity (A/W): 0.3000
Rise Time (ns): 15000
Operating Temperature (C): -30.00 to 80.00
Dark Current (nA): 0.0050
Noise Equivalent Power (W/Hz½): 3.50E-15
Photodiode Material: GaAsP
Photodiode Package: TO-8
Notes: GaAsP photodiode, diffusion type, borosilicate glass window
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Part number: G1118
Photodiode Type: PN
Photodiode Spectral Response: Visible
Spectral Response Range (nm): 300 to 680
Peak Sensitivity Wavelength (nm): 640
Active Area Diameter or Length (mm): 1.30
Active Area Height (mm): 1.30
Sensitivity (A/W): 0.3000
Rise Time (ns): 1000
Operating Temperature (C): -30.00 to 80.00
Dark Current (nA): 0.0010
Noise Equivalent Power (W/Hz½): 1.50E-15
Photodiode Material: GaAsP
Photodiode Package: Ceramic
Notes: GaAsP photodiode, diffusion type, resin coated window
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Part number: G1120
Photodiode Type: PN
Photodiode Spectral Response: Visible
Spectral Response Range (nm): 300 to 680
Peak Sensitivity Wavelength (nm): 640
Active Area Diameter or Length (mm): 5.60
Active Area Height (mm): 5.60
Sensitivity (A/W): 0.3000
Rise Time (ns): 15000
Operating Temperature (C): -30.00 to 80.00
Dark Current (nA): 0.0050
Noise Equivalent Power (W/Hz½): 3.50E-15
Photodiode Material: GaAsP
Photodiode Package: Ceramic
Notes: GaAsP photodiode, diffusion type, resin coated window
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Part number: G1126-02
Photodiode Type: PN
Photodiode Spectral Response: UV Visible
Spectral Response Range (nm): 190 to 680
Peak Sensitivity Wavelength (nm): 610
Active Area Diameter or Length (mm): 2.30
Active Area Height (mm): 2.30
Sensitivity (A/W): 0.1800
Rise Time (ns): 3500
Operating Temperature (C): -10.00 to 60.00
Dark Current (nA): 0.0050
Noise Equivalent Power (W/Hz½): 5.80E-15
Photodiode Material: GaAsP
Photodiode Package: TO-5
Notes: GaAsP photodiode, Schottky type, quartz glass window
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Part number: G1127-02
Photodiode Type: PN
Photodiode Spectral Response: UV Visible
Spectral Response Range (nm): 190 to 680
Peak Sensitivity Wavelength (nm): 610
Active Area Diameter or Length (mm): 4.60
Active Area Height (mm): 4.60
Sensitivity (A/W): 0.1800
Rise Time (ns): 12000
Operating Temperature (C): -10.00 to 60.00
Dark Current (nA): 0.0100
Noise Equivalent Power (W/Hz½): 8.00E-15
Photodiode Material: GaAsP
Photodiode Package: TO-8
Notes: GaAsP photodiode, Schottky type, quartz glass window
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Part number: G120
VDRM(V): +/- 90
Breakover Voltage (60 Hz Sine Wave) (V): 110
On-State RMS Current Conduction Angle of 360° (A): 1.0
Peak Surge (Non-Repetitive) On-State Current One-cycle @60Hz (A): 20
Repetitive Peak Off-State Current @60Hz, V =VDRM (µA): 10
Dynamic Holding Current R =0.1 KW , 60Hz (mA): 100
Breakover Current 60Hz Sine Wave (µA): 200
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Part number: G1250-1 - G1250-4
IF(AV) (A): DO-41
Package:
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Part number: G130
VDRM(V): +/- 90
Breakover Voltage (60 Hz Sine Wave) (V): 120
On-State RMS Current Conduction Angle of 360° (A): 1.0
Peak Surge (Non-Repetitive) On-State Current One-cycle @60Hz (A): 20
Repetitive Peak Off-State Current @60Hz, V =VDRM (µA): 10
Dynamic Holding Current R =0.1 KW , 60Hz (mA): 100
Breakover Current 60Hz Sine Wave (µA): 200
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Part number: G1735
Photodiode Type: PN
Photodiode Spectral Response: Visible
Spectral Response Range (nm): 400 to 760
Peak Sensitivity Wavelength (nm): 710
Active Area Diameter or Length (mm): 1.30
Active Area Height (mm): 1.30
Sensitivity (A/W): 0.4000
Rise Time (ns): 500
Operating Temperature (C): -30.00 to 80.00
Dark Current (nA): 0.0020
Noise Equivalent Power (W/Hz½): 2.00E-15
Photodiode Material: GaAsP
Photodiode Package: TO-18
Notes: GaAsP photodiode, diffusion type, borosilicate glass window
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Part number: G1736
Photodiode Type: PN
Photodiode Spectral Response: Visible
Spectral Response Range (nm): 400 to 760
Peak Sensitivity Wavelength (nm): 710
Active Area Diameter or Length (mm): 2.70
Active Area Height (mm): 2.70
Sensitivity (A/W): 0.4000
Rise Time (ns): 1800
Operating Temperature (C): -30.00 to 80.00
Dark Current (nA): 0.0050
Noise Equivalent Power (W/Hz½): 3.20E-15
Photodiode Material: GaAsP
Photodiode Package: TO-5
Notes: GaAsP photodiode, diffusion type, borosilicate glass window
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Part number: G1737
Photodiode Type: PN
Photodiode Spectral Response: Visible
Spectral Response Range (nm): 400 to 760
Peak Sensitivity Wavelength (nm): 710
Active Area Diameter or Length (mm): 5.60
Active Area Height (mm): 5.60
Sensitivity (A/W): 0.4000
Rise Time (ns): 10000
Operating Temperature (C): -30.00 to 80.00
Dark Current (nA): 0.0100
Noise Equivalent Power (W/Hz½): 4.50E-15
Photodiode Material: GaAsP
Photodiode Package: TO-8
Notes: GaAsP photodiode, diffusion type, borosilicate glass window
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Part number: G1738
Photodiode Type: PN
Photodiode Spectral Response: Visible
Spectral Response Range (nm): 400 to 760
Peak Sensitivity Wavelength (nm): 710
Active Area Diameter or Length (mm): 1.30
Active Area Height (mm): 1.30
Sensitivity (A/W): 0.4000
Rise Time (ns): 500
Operating Temperature (C): -30.00 to 80.00
Dark Current (nA): 0.0020
Noise Equivalent Power (W/Hz½): 2.00E-15
Photodiode Material: GaAsP
Photodiode Package: Ceramic
Notes: GaAsP photodiode, diffusion type, resin coated window
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Part number: G1746
Photodiode Type: PN
Photodiode Spectral Response: UV Visible
Spectral Response Range (nm): 190 to 760
Peak Sensitivity Wavelength (nm): 710
Active Area Diameter or Length (mm): 2.30
Active Area Height (mm): 2.30
Sensitivity (A/W): 0.2200
Rise Time (ns): 3000
Operating Temperature (C): -10.00 to 60.00
Dark Current (nA): 0.0100
Noise Equivalent Power (W/Hz½): 6.50E-15
Photodiode Material: GaAsP
Photodiode Package: TO-5
Notes: GaAsP photodiode, Schottky type, quartz glass window
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Part number: G1747
Photodiode Type: PN
Photodiode Spectral Response: UV Visible
Spectral Response Range (nm): 190 to 760
Peak Sensitivity Wavelength (nm): 710
Active Area Diameter or Length (mm): 4.60
Active Area Height (mm): 4.60
Sensitivity (A/W): 0.2200
Rise Time (ns): 12000
Operating Temperature (C): -10.00 to 60.00
Dark Current (nA): 0.0200
Noise Equivalent Power (W/Hz½): 1.20E-15
Photodiode Material: GaAsP
Photodiode Package: TO-8
Notes: GaAsP photodiode, Schottky type, quartz glass window
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Part number: G1961
Photodiode Type: PN
Photodiode Spectral Response: UV Visible
Spectral Response Range (nm): 190 to 550
Peak Sensitivity Wavelength (nm): 440
Active Area Diameter or Length (mm): 1.10
Active Area Height (mm): 1.10
Sensitivity (A/W): 0.1200
Rise Time (ns): 5000
Operating Temperature (C): -10.00 to 60.00
Dark Current (nA): 0.0025
Noise Equivalent Power (W/Hz½): 5.40E-15
Photodiode Material: GaP
Photodiode Package: TO-18
Notes: GaP photodiode, quartz glass window
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Part number: G1962
Photodiode Type: PN
Photodiode Spectral Response: UV Visible
Spectral Response Range (nm): 190 to 550
Peak Sensitivity Wavelength (nm): 440
Active Area Diameter or Length (mm): 2.30
Active Area Height (mm): 2.30
Sensitivity (A/W): 0.1200
Rise Time (ns): 10000
Operating Temperature (C): -10.00 to 60.00
Dark Current (nA): 0.0050
Noise Equivalent Power (W/Hz½): 7.60E-15
Photodiode Material: GaP
Photodiode Package: TO-5
Notes: GaP photodiode, quartz glass window
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Part number: G1963
Photodiode Type: PN
Photodiode Spectral Response: UV Visible
Spectral Response Range (nm): 190 to 550
Peak Sensitivity Wavelength (nm): 440
Active Area Diameter or Length (mm): 4.60
Active Area Height (mm): 4.60
Sensitivity (A/W): 0.1200
Rise Time (ns): 30000
Operating Temperature (C): -10.00 to 60.00
Dark Current (nA): 0.0100
Noise Equivalent Power (W/Hz½): 1.10E-14
Photodiode Material: GaP
Photodiode Package: TO-8
Notes: GaP photodiode, quartz glass window
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Part number: G1A thru G1M
IF(AV) (A): 1
Package: DO-204AP
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