Semiconductors Parts begin by G5 Page1

Main site (French only)

Circuits Index

Integrated Circuits

Discretes Circuits

Others

Packages types

Pinout circuits

Miscellaneous

Contact

index

digchip

Semiconductors Parts begin by G5, Total parts = 22

Pages 1

Displaying page 1 / 1

Part number: G522-0615-00
Description: The IBM gigabit 1x9 optical transceiver is a state-of-the-art component designed expressly for building high-speed bi-directional communication links that require data rates of up to 1.25 Gb/s. It is the latest addition to IBM's broad portfolio of optical transport products designed to support host-to-host and high-speed interconnects within a system.

Part number: G5645
Photodiode Type: PN
Photodiode Spectral Response: Visible
Spectral Response Range (nm): 300 to 580
Peak Sensitivity Wavelength (nm): 470
Active Area Diameter or Length (mm): 0.8000
Active Area Height (mm): 0.8000
Sensitivity (A/W): 0.2800
Rise Time (ns): 3000
Operating Temperature (C): -30.00 to 80.00
Dark Current (nA): 0.0500
Noise Equivalent Power (W/Hz½): 2.30E-15
Photodiode Material: GaAsP
Photodiode Package: TO-18
Notes: GaAsP photodiode, diffusion type, borosilicate glass window

Part number: G5842
Photodiode Type: PN
Photodiode Spectral Response: Visible
Spectral Response Range (nm): 260 to 400
Peak Sensitivity Wavelength (nm): 370
Active Area Diameter or Length (mm): 0.8000
Active Area Height (mm): 0.8000
Sensitivity (A/W): 0.0600
Rise Time (ns): 3000
Operating Temperature (C): -30.00 to 80.00
Dark Current (nA): 0.0500
Noise Equivalent Power (W/Hz½): 7.60E-15
Photodiode Material: GaAsP
Photodiode Package: Plastic
Notes: GaAsP photodiode, diffusion type

Part number: G5851-103
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 900 to 1870
Peak Sensitivity Wavelength (nm): 1750
Active Area Diameter or Length (mm): 0.3000
Sensitivity (A/W): 1.10
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 3.00
Noise Equivalent Power (W/Hz½): 3.00E-14
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cutoff wavelength, low dark current, 1-stage TE-cooled

Part number: G5851-11
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 900 to 1870
Peak Sensitivity Wavelength (nm): 1750
Active Area Diameter or Length (mm): 1.00
Sensitivity (A/W): 1.10
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 10.00
Noise Equivalent Power (W/Hz½): 6.00E-14
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cutoff wavelength, low dark current, 1-stage TE-cooled

Part number: G5851-13
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 900 to 1870
Peak Sensitivity Wavelength (nm): 1750
Active Area Diameter or Length (mm): 3.00
Sensitivity (A/W): 1.10
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 200
Noise Equivalent Power (W/Hz½): 2.00E-13
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cutoff wavelength, low dark current, 1-stage TE-cooled

Part number: G5851-203
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 900 to 1850
Peak Sensitivity Wavelength (nm): 1750
Active Area Diameter or Length (mm): 0.3000
Sensitivity (A/W): 1.10
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 1.50
Noise Equivalent Power (W/Hz½): 2.00E-14
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cutoff wavelength, low dark current, 2-stage TE-cooled

Part number: G5851-21
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 900 to 1850
Peak Sensitivity Wavelength (nm): 1750
Active Area Diameter or Length (mm): 1.00
Sensitivity (A/W): 1.10
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 5.00
Noise Equivalent Power (W/Hz½): 4.00E-14
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cutoff wavelength, low dark current, 2-stage TE-cooled

Part number: G5851-23
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 900 to 1850
Peak Sensitivity Wavelength (nm): 1750
Active Area Diameter or Length (mm): 3.00
Sensitivity (A/W): 1.10
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 100
Noise Equivalent Power (W/Hz½): 1.50E-13
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cutoff wavelength, low dark current, 2-stage TE-cooled

Part number: G5852-103
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 900 to 2070
Peak Sensitivity Wavelength (nm): 1950
Active Area Diameter or Length (mm): 0.3000
Sensitivity (A/W): 1.20
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 5.50
Noise Equivalent Power (W/Hz½): 5.00E-14
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cut-off wavelength, low dark current, 1-stage TE cooled

Part number: G5852-11
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 900 to 2070
Peak Sensitivity Wavelength (nm): 1950
Active Area Diameter or Length (mm): 1.00
Sensitivity (A/W): 1.20
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 50.00
Noise Equivalent Power (W/Hz½): 1.00E-13
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cut-off wavelength, low dark current, 1-stage TE cooled

Part number: G5852-13
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 900 to 2070
Peak Sensitivity Wavelength (nm): 1950
Active Area Diameter or Length (mm): 3.00
Sensitivity (A/W): 1.20
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 500
Noise Equivalent Power (W/Hz½): 4.00E-13
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cut-off wavelength, low dark current, 1-stage TE cooled

Part number: G5852-203
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 900 to 2050
Peak Sensitivity Wavelength (nm): 1950
Active Area Diameter or Length (mm): 0.3000
Sensitivity (A/W): 1.20
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 3.00
Noise Equivalent Power (W/Hz½): 3.00E-14
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cut-off wavelength, low dark current, 2-stage TE cooled

Part number: G5852-21
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 900 to 2050
Peak Sensitivity Wavelength (nm): 1950
Active Area Diameter or Length (mm): 1.00
Sensitivity (A/W): 1.20
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 25.00
Noise Equivalent Power (W/Hz½): 8.00E-14
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cut-off wavelength, low dark current, 2-stage TE cooled

Part number: G5852-23
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 900 to 2050
Peak Sensitivity Wavelength (nm): 1950
Active Area Diameter or Length (mm): 3.00
Sensitivity (A/W): 1.20
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 250
Noise Equivalent Power (W/Hz½): 3.00E-13
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cut-off wavelength, low dark current, 2-stage TE cooled

Part number: G5853-103
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 1200 to 2570
Peak Sensitivity Wavelength (nm): 2300
Active Area Diameter or Length (mm): 0.3000
Sensitivity (A/W): 1.10
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 200
Noise Equivalent Power (W/Hz½): 3.00E-13
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cut-off wavelength, low dark current, 1-stage TE cooled

Part number: G5853-11
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 1200 to 2570
Peak Sensitivity Wavelength (nm): 2300
Active Area Diameter or Length (mm): 1.00
Sensitivity (A/W): 1.10
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 1500
Noise Equivalent Power (W/Hz½): 7.00E-13
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cut-off wavelength, low dark current, 1-stage TE cooled

Part number: G5853-13
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 1200 to 2570
Peak Sensitivity Wavelength (nm): 2300
Active Area Diameter or Length (mm): 3.00
Sensitivity (A/W): 1.10
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 15000
Noise Equivalent Power (W/Hz½): 2.00E-12
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cut-off wavelength, low dark current, 1-stage TE cooled

Part number: G5853-203
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 1200 to 2550
Peak Sensitivity Wavelength (nm): 2300
Active Area Diameter or Length (mm): 0.3000
Sensitivity (A/W): 1.10
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 100
Noise Equivalent Power (W/Hz½): 2.00E-13
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cut-off wavelength, low dark current, 2-stage TE cooled

Part number: G5853-21
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 1200 to 2550
Peak Sensitivity Wavelength (nm): 2300
Active Area Diameter or Length (mm): 1.00
Sensitivity (A/W): 1.10
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 800
Noise Equivalent Power (W/Hz½): 5.00E-13
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cut-off wavelength, low dark current, 2-stage TE cooled

Part number: G5853-23
Photodiode Type: PIN
Photodiode Spectral Response: IR
Spectral Response Range (nm): 1200 to 2550
Peak Sensitivity Wavelength (nm): 2300
Active Area Diameter or Length (mm): 3.00
Sensitivity (A/W): 1.10
Operating Temperature (C): -40.00 to 70.00
Dark Current (nA): 7500
Noise Equivalent Power (W/Hz½): 1.80E-12
Photodiode Material: InGaAs
Photodiode Package: TO-8
Notes: Long cut-off wavelength, low dark current, 2-stage TE cooled

Part number: G5SBA20 AND G5SBA60
IF(AV) (A): 6
Package: GBU