Part number: HG-1012JA
Description: High-Stability
Output Frequency Range: 1.5000 to 28.63636MHz
Operating Voltage: 5V
Temperature Range: -20° to +70°C / -40° to +85°C
Frequency Stability: ±20ppm / ±25ppm (-20° to +70°C) & ±25ppm / ±30ppm (-40° to +85°C)
Package Length: 14.0mm
Package Width: 8.65mm
Package Height: 4.7mm
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Part number: HG-2012JA
Description: High-Stability
Output Frequency Range: 1.5000 to 28.63636MHz
Operating Voltage: 5V
Temperature Range: -20° to +70°C / -40° to +85°C
Frequency Stability: ±15ppm / ±20ppm (-20° to +70°C) & ±25ppm (-40° to +85°C)
Package Length: 14.0mm
Package Width: 8.65mm
Package Height: 4.7mm
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Part number: HG-8002DC
Description: High Stability Programmable
Output Frequency Range: 1.0000 to 125.000MHz
Operating Voltage: 3.3V & 5.0V
Temperature Range: -20° to +70°C / -40° to +85°C
Frequency Stability: ±20ppm / ±25ppm (-20° to +70°C) & ±30ppm (-40° to +85°C)
Package Length: 13.7mm
Package Width: 6.6mm
Package Height: 5.3mm
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Part number: HG-8002JA
Description: High Stability Programmable
Output Frequency Range: 1.0000 to 125.000MHz
Operating Voltage: 3.3V & 5.0V
Temperature Range: -20° to +70°C / -40° to +85°C
Frequency Stability: ±20ppm / ±25ppm (-20° to +70°C) & ±30ppm (-40° to +85°C)
Package Length: 14.0mm
Package Width: 8.65mm
Package Height: 4.7mm
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Part number: HG06
Description: 0.6µm BiCMOS process
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Part number: HGT1N30N60A4D
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.8
VCE(sat)Test Condition: -
tf TYP (ns): 70
Package: SOT-227
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGT1N40N60A4D
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.7
VCE(sat)Test Condition: -
tf TYP (ns): 35
Package: SOT-227
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGT1S10N120BNS
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.45
VCE(sat)Test Condition: -
tf TYP (ns): 200
Package: TO-263/D2PAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGT1S11N120CNS
Configuration: Discrete
Built in Diode: -
Short Circut Rated: -
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.1
VCE(sat)Test Condition: -
tf TYP (ns): 400
Package: TO-263/D2PAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGT1S12N60A4DS
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 2
VCE(sat)Test Condition: -
tf TYP (ns): 18
Package: TO-263/D2PAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGT1S12N60A4S
Configuration: Discrete
Built in Diode: -
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 2
VCE(sat)Test Condition: -
tf TYP (ns): 95
Package: TO-263/D2PAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGT1S12N60B3S
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.6
VCE(sat)Test Condition: -
tf TYP (ns): 62
Package: TO-263/D2PAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGT1S12N60C3DS
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.65
VCE(sat)Test Condition: -
tf TYP (ns): 275
Package: TO-263/D2PAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGT1S2N120CNS
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.05
VCE(sat)Test Condition: -
tf TYP (ns): 420
Package: TO-263/D2PAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGT1S3N60A4DS
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 2
VCE(sat)Test Condition: -
tf TYP (ns): 47
Package: TO-263/D2PAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGT1S3N60A4S
Configuration: Discrete
Built in Diode: -
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 2
VCE(sat)Test Condition: -
tf TYP (ns): 47
Package: TO-263/D2PAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGT1S3N60C3DS
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.65
VCE(sat)Test Condition: -
tf TYP (ns): 275
Package: TO-263/D2PAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGT1S5N120BNDS
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.45
VCE(sat)Test Condition: -
tf TYP (ns): 160
Package: TO-263/D2PAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGT1S5N120BNS
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.45
VCE(sat)Test Condition: -
tf TYP (ns): 160
Package: TO-263/D2PAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGT1S5N120CNDS
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.1
VCE(sat)Test Condition: -
tf TYP (ns): 350
Package: TO-263/D2PAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGT1S5N120CNS
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.1
VCE(sat)Test Condition: -
tf TYP (ns): 400
Package: TO-263/D2PAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGT1S7N60A4DS
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.9
VCE(sat)Test Condition: -
tf TYP (ns): 45
Package: TO-263/D2PAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGT1S7N60A4S
Configuration: Discrete
Built in Diode: -
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.9
VCE(sat)Test Condition: -
tf TYP (ns): 45
Package: TO-263/D2PAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGTD1N120CNS
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.05
VCE(sat)Test Condition: -
tf TYP (ns): 450
Package: TO-252/DPAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGTD2N120BNS
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.45
VCE(sat)Test Condition: -
tf TYP (ns): 130
Package: TO-252/DPAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGTD2N120CNS
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.05
VCE(sat)Test Condition: -
tf TYP (ns): 420
Package: TO-252/DPAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGTD3N60A4S
Configuration: Discrete
Built in Diode: -
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 2
VCE(sat)Test Condition: -
tf TYP (ns): 47
Package: TO-252/DPAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTD3N60B3S
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.8
VCE(sat)Test Condition: -
tf TYP (ns): 70
Package: TO-252/DPAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGTD3N60C3
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.65
VCE(sat)Test Condition: -
tf TYP (ns): 275
Package: TO-251/IPAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTD3N60C3S
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.65
VCE(sat)Test Condition: -
tf TYP (ns): 275
Package: TO-252/DPAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTD7N60A4S
Configuration: Discrete
Built in Diode: -
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.9
VCE(sat)Test Condition: -
tf TYP (ns): 45
Package: TO-252/DPAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTD7N60B3S
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.8
VCE(sat)Test Condition: -
tf TYP (ns): 60
Package: TO-252/DPAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTD7N60C3S
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.6
VCE(sat)Test Condition: -
tf TYP (ns): 275
Package: TO-252/DPAK
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGTG10N120BN
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.45
VCE(sat)Test Condition: -
tf TYP (ns): 200
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTG10N120BND
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.45
VCE(sat)Test Condition: -
tf TYP (ns): 140
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTG11N120CN
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.1
VCE(sat)Test Condition: -
tf TYP (ns): 400
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTG11N120CND
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.1
VCE(sat)Test Condition: -
tf TYP (ns): 400
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGTG12N60A4
Configuration: Discrete
Built in Diode: -
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 2
VCE(sat)Test Condition: -
tf TYP (ns): 95
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGTG12N60A4D
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 2
VCE(sat)Test Condition: -
tf TYP (ns): 18
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTG12N60B3
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.6
VCE(sat)Test Condition: -
tf TYP (ns): 62
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTG12N60B3D
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.6
VCE(sat)Test Condition: -
tf TYP (ns): 62
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTG12N60C3D
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.65
VCE(sat)Test Condition: -
tf TYP (ns): 275
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
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Part number: HGTG18N120BN
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.45
VCE(sat)Test Condition: -
tf TYP (ns): 140
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTG18N120BND
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.45
VCE(sat)Test Condition: -
tf TYP (ns): 140
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTG20N120CN
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.1
VCE(sat)Test Condition: -
tf TYP (ns): 270
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTG20N120CND
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.1
VCE(sat)Test Condition: -
tf TYP (ns): 270
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTG20N60A4
Configuration: Discrete
Built in Diode: -
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.8
VCE(sat)Test Condition: -
tf TYP (ns): 73
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTG20N60A4D
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.8
VCE(sat)Test Condition: -
tf TYP (ns): 73
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTG20N60B3
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.8
VCE(sat)Test Condition: -
tf TYP (ns): 70
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTG20N60B3D
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.8
VCE(sat)Test Condition: -
tf TYP (ns): 70
Package: TO-257
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTG20N60C3
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.4
VCE(sat)Test Condition: -
tf TYP (ns): 98
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTG20N60C3D
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.4
VCE(sat)Test Condition: -
tf TYP (ns): 98
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTG27N120BN
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.45
VCE(sat)Test Condition: -
tf TYP (ns): 120
Package: TO-247
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP20N60A4
Configuration: Discrete
Built in Diode: -
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.8
VCE(sat)Test Condition: -
tf TYP (ns): 73
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP20N60B3
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.8
VCE(sat)Test Condition: -
tf TYP (ns): 70
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP20N60C3
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.4
VCE(sat)Test Condition: -
tf TYP (ns): 98
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP2N120BN
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.45
VCE(sat)Test Condition: -
tf TYP (ns): 130
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP2N120BND
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.45
VCE(sat)Test Condition: -
tf TYP (ns): 130
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP2N120CN
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.05
VCE(sat)Test Condition: -
tf TYP (ns): 420
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP2N120CND
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.05
VCE(sat)Test Condition: -
tf TYP (ns): 420
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP3N60A4
Configuration: Discrete
Built in Diode: -
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 2
VCE(sat)Test Condition: -
tf TYP (ns): 47
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP3N60A4D
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 2
VCE(sat)Test Condition: -
tf TYP (ns): 47
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP3N60B3
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.8
VCE(sat)Test Condition: -
tf TYP (ns): 70
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP3N60B3D
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.8
VCE(sat)Test Condition: -
tf TYP (ns): 70
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP3N60C3
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.65
VCE(sat)Test Condition: -
tf TYP (ns): 275
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP3N60C3D
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.65
VCE(sat)Test Condition: -
tf TYP (ns): 275
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP5N120BN
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.45
VCE(sat)Test Condition: -
tf TYP (ns): 160
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP5N120BND
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.45
VCE(sat)Test Condition: -
tf TYP (ns): 160
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP5N120CN
Configuration: Discrete
Built in Diode: -
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.1
VCE(sat)Test Condition: -
tf TYP (ns): 400
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP5N120CND
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: Yes
BVCES MIN (V): 1200
VCE(sat) TYP (V): 2.1
VCE(sat)Test Condition: -
tf TYP (ns): 250
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP7N60A4
Configuration: Discrete
Built in Diode: -
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.9
VCE(sat)Test Condition: -
tf TYP (ns): 45
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
Part number: HGTP7N60A4D
Configuration: Discrete
Built in Diode: Yes
Short Circut Rated: -
BVCES MIN (V): 600
VCE(sat) TYP (V): 1.9
VCE(sat)Test Condition: -
tf TYP (ns): 45
Package: TO-220
toff TYP (ns): -
SCIS Energy @25C MIN (mJ): -
Clamping Voltage TYP (V): -
|
