Semiconductors Parts begin by MR, Total parts = 252
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Part number: MRF16006
Package: 1600.0
Min. Op. Freq. (MHz): 1640.0
Max. Op. Freq. (MHz): 6.0
Pout (W): 7.4
Gain (dB): 40.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF16030
Package: 1600.0
Min. Op. Freq. (MHz): 1640.0
Max. Op. Freq. (MHz): 30.0
Pout (W): 7.5
Gain (dB): 40.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF166C
Package: 5.0
Min. Op. Freq. (MHz): 500.0
Max. Op. Freq. (MHz): 20.0
Pout (W): 13.5
Gain (dB): 50.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF166W
Package: 5.0
Min. Op. Freq. (MHz): 500.0
Max. Op. Freq. (MHz): 40.0
Pout (W): 14.0
Gain (dB): 50.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF171A
Package: 100.0
Min. Op. Freq. (MHz): 200.0
Max. Op. Freq. (MHz): 45.0
Pout (W): 17.0
Gain (dB): 60.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF173
Package: 5.0
Min. Op. Freq. (MHz): 175.0
Max. Op. Freq. (MHz): 80.0
Pout (W): 11.0
Gain (dB): 60.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF173CQ
Package: 5.0
Min. Op. Freq. (MHz): 175.0
Max. Op. Freq. (MHz): 80.0
Pout (W): 13.0
Gain (dB): 60.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF174
Package: 5.0
Min. Op. Freq. (MHz): 200.0
Max. Op. Freq. (MHz): 125.0
Pout (W): 9.0
Gain (dB): 50.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF175GU
Package: 5.0
Min. Op. Freq. (MHz): 400.0
Max. Op. Freq. (MHz): 150.0
Pout (W): 12.0
Gain (dB): 55.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF175GV
Package: 5.0
Min. Op. Freq. (MHz): 225.0
Max. Op. Freq. (MHz): 200.0
Pout (W): 14.0
Gain (dB): 65.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF175LU
Package: 5.0
Min. Op. Freq. (MHz): 400.0
Max. Op. Freq. (MHz): 100.0
Pout (W): 10.0
Gain (dB): 55.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF176GU
Package: 5.0
Min. Op. Freq. (MHz): 400.0
Max. Op. Freq. (MHz): 150.0
Pout (W): 14.0
Gain (dB): 50.0
Efficiency (%): 50.0
Vcc (V):


Part number: MRF176GV
Package: 5.0
Min. Op. Freq. (MHz): 225.0
Max. Op. Freq. (MHz): 200.0
Pout (W): 17.0
Gain (dB): 55.0
Efficiency (%): 50.0
Vcc (V):


Part number: MRF177
Package: 5.0
Min. Op. Freq. (MHz): 400.0
Max. Op. Freq. (MHz): 100.0
Pout (W): 12.0
Gain (dB): 60.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF18030A
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1805-1880
Pout (Watts): 30 CW
Test Signal: 1-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 14/1805,1880
Eff. (Typ) (%): 50
thetaJC (°C/W): 2.1
Die Technology: LDMOS
System Application: GSM1800, GSM1900, GSM EDGE,PCS TDMA
Package/Style: 465E/1


Part number: MRF18030AS
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1805-1880
Pout (Watts): 30 CW
Test Signal: 1-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 14/1805,1880
Eff. (Typ) (%): 50
thetaJC (°C/W): 2.1
Die Technology: LDMOS
System Application: GSM1800, GSM1900, GSM EDGE,PCS TDMA
Package/Style: 465F/1


Part number: MRF18030B
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 30 CW
Test Signal: 1-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 14/1930,1990
Eff. (Typ) (%): 50
thetaJC (°C/W): 2.1
Die Technology: LDMOS
System Application: GSM1800, GSM1900, GSM EDGE,PCS TDMA
Package/Style: 465E/1


Part number: MRF18030BS
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 30 CW
Test Signal: 1-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 14/1930,1990
Eff. (Typ) (%): 50
thetaJC (°C/W): 2.1
Die Technology: LDMOS
System Application: GSM1800, GSM1900, GSM EDGE,PCS TDMA
Package/Style: 465F/1


Part number: MRF18060A
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1805-1880
Pout (Watts): 60 CW
Test Signal: 1-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13/1805,1880
Eff. (Typ) (%): 45
thetaJC (°C/W): 0.97
Die Technology: LDMOS
System Application: GSM1800, GSM1900, GSM EDGE,PCS TDMA
Package/Style: 465/1


Part number: MRF18060ASR3
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1805-1880
Pout (Watts): 60 CW
Test Signal: 1-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13/1805,1880
Eff. (Typ) (%): 45
thetaJC (°C/W): 0.97
Die Technology: LDMOS
System Application: GSM1800, GSM1900, GSM EDGE,PCS TDMA
Package/Style: 465A/1


Part number: MRF18060B
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 60 CW
Test Signal: 1-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13/1930,1990
Eff. (Typ) (%): 45
thetaJC (°C/W): 0.97
Die Technology: LDMOS
System Application: GSM1800, GSM1900, GSM EDGE,PCS TDMA
Package/Style: 465/1


Part number: MRF18060BS
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 60 CW
Test Signal: 1-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13/1930,1990
Eff. (Typ) (%): 45
thetaJC (°C/W): 0.97
Die Technology: LDMOS
System Application: GSM1800, GSM1900, GSM EDGE,PCS TDMA
Package/Style: 465A/1


Part number: MRF18085A
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1805-1880
Pout (Watts): 85 CW
Test Signal: 1-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13/1805,1880
Eff. (Typ) (%): 53
thetaJC (°C/W): 0.64
Die Technology: LDMOS
System Application: GSM1800, GSM1900, GSM EDGE,PCS TDMA
Package/Style: 465/1


Part number: MRF18085AS
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1805-1880
Pout (Watts): 85 CW
Test Signal: 1-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13/1805,1880
Eff. (Typ) (%): 53
thetaJC (°C/W): 0.64
Die Technology: LDMOS
System Application: GSM1800, GSM1900, GSM EDGE,PCS TDMA
Package/Style: 465A/1


Part number: MRF18085B
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 85 CW
Test Signal: 1-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13/1930,1990
Eff. (Typ) (%): 52
thetaJC (°C/W): 0.64
Die Technology: LDMOS
System Application: GSM1800, GSM1900, GSM EDGE,PCS TDMA
Package/Style: 465/1


Part number: MRF18085BS
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 85 CW
Test Signal: 1-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13/1930,1990
Eff. (Typ) (%): 52
thetaJC (°C/W): 0.64
Die Technology: LDMOS
System Application: GSM1800, GSM1900, GSM EDGE,PCS TDMA
Package/Style: 465A/1


Part number: MRF18090A
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1805-1880
Pout (Watts): 90 CW
Test Signal: 1-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13.5/1805,1880
Eff. (Typ) (%): 52
thetaJC (°C/W): 0.7
Die Technology: LDMOS
System Application: GSM1800, GSM1900, GSM EDGE,PCS TDMA
Package/Style: 465B/1


Part number: MRF18090AS
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1805-1880
Pout (Watts): 90 CW
Test Signal: 1-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13.5/1805,1880
Eff. (Typ) (%): 52
thetaJC (°C/W): 0.7
Die Technology: LDMOS
System Application: GSM1800, GSM1900, GSM EDGE,PCS TDMA
Package/Style: 465C/1


Part number: MRF18090B
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 90 CW
Test Signal: 1-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13.5/1930,1990
Eff. (Typ) (%): 45
thetaJC (°C/W): 0.7
Die Technology: LDMOS
System Application: GSM1800, GSM1900, GSM EDGE,PCS TDMA
Package/Style: 465B/1


Part number: MRF18090BS
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 90 CW
Test Signal: 1-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13.5/1930,1990
Eff. (Typ) (%): 45
thetaJC (°C/W): 0.7
Die Technology: LDMOS
System Application: GSM1800, GSM1900, GSM EDGE,PCS TDMA
Package/Style: 465C/1


Part number: MRF182
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 945
Pout (Watts): 30 CW
Test Signal: -
Supply Voltage (Volts): 28
Gain–Typ/Freq. (dB/MHz): 14/945
Eff. (Typ) (%): 58
thetaJC (°C/W): 1.75
Class: AB
Die Technology: LDMOS
Package/Style: 360B/1


Part number: MRF182SR1
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 945
Pout (Watts): 30 CW
Test Signal: -
Supply Voltage (Volts): 28
Gain–Typ/Freq. (dB/MHz): -
Eff. (Typ) (%): 58
thetaJC (°C/W): -
Class: AB
Die Technology: LDMOS
Package/Style: 360C/1


Part number: MRF183
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 945
Pout (Watts): 45 PEP
Test Signal: -
Supply Voltage (Volts): 28
Gain–Typ/Freq. (dB/MHz): 13.5/945
Eff. (Typ) (%): 38
thetaJC (°C/W): 1.5
Class: AB
Die Technology: LDMOS
Package/Style: 360B/1


Part number: MRF183S
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 945
Pout (Watts): 45 PEP
Test Signal: -
Supply Voltage (Volts): 28
Gain–Typ/Freq. (dB/MHz): 13.5/945
Eff. (Typ) (%): 38
thetaJC (°C/W): 1.5
Class: AB
Die Technology: LDMOS
Package/Style: 360C/1


Part number: MRF184
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 945
Pout (Watts): 60 CW
Test Signal: -
Supply Voltage (Volts): 28
Gain–Typ/Freq. (dB/MHz): 13.5/945
Eff. (Typ) (%): 60
thetaJC (°C/W): 1.1
Class: AB
Die Technology: LDMOS
Package/Style: 360B/1


Part number: MRF184SR1
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 945
Pout (Watts): 60 CW
Test Signal: -
Supply Voltage (Volts): 28
Gain–Typ/Freq. (dB/MHz): 13.5/945
Eff. (Typ) (%): 60
thetaJC (°C/W): 1.1
Class: AB
Die Technology: LDMOS
Package/Style: 360C/1


Part number: MRF185
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 960
Pout (Watts): 85 CW
Test Signal: -
Supply Voltage (Volts): 28
Gain–Typ/Freq. (dB/MHz): 14/960
Eff. (Typ) (%): 53
thetaJC (°C/W): 0.7
Class: AB
Die Technology: LDMOS
Package/Style: 375B/2


Part number: MRF186
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 945
Pout (Watts): 120 PEP
Test Signal: -
Supply Voltage (Volts): 28
Gain–Typ/Freq. (dB/MHz): 12/945
Eff. (Typ) (%): 35
thetaJC (°C/W): 0.6
Class: AB
Die Technology: LDMOS
Package/Style: 375B/2


Part number: MRF187
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 880
Pout (Watts): 85 PEP
Test Signal: -
Supply Voltage (Volts): 26
Gain–Typ/Freq. (dB/MHz): 13/880
Eff. (Typ) (%): 33
thetaJC (°C/W): 0.7
Class: AB
Die Technology: LDMOS
Package/Style: 465/1


Part number: MRF187S
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 880
Pout (Watts): 85 PEP
Test Signal: -
Supply Voltage (Volts): 26
Gain–Typ/Freq. (dB/MHz): 13/880
Eff. (Typ) (%): 33
thetaJC (°C/W): 0.7
Class: AB
Die Technology: LDMOS
Package/Style: 465A/1


Part number: MRF19030
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 30 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13/1990
Eff. (Typ) (%): 36
thetaJC (°C/W): 2.1
Die Technology: LDMOS
System Application: 2–CH N–CDMA
Package/Style: 465E/1


Part number: MRF19030S
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 30 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13/1990
Eff. (Typ) (%): 36
thetaJC (°C/W): 2.1
Die Technology: LDMOS
System Application: 2–CH N–CDMA
Package/Style: 465F/1


Part number: MRF19045
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 9.5 AVG
Test Signal: N-CDMA
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 14.5/1990
Eff. (Typ) (%): 23.5
thetaJC (°C/W): 0.65
Die Technology: LDMOS
System Application: 2–CH N–CDMA
Package/Style: 465E/1


Part number: MRF19045S
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 9.5 AVG
Test Signal: N-CDMA
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 14.5/1990
Eff. (Typ) (%): 23.5
thetaJC (°C/W): 0.65
Die Technology: LDMOS
System Application: 2–CH N–CDMA
Package/Style: 465F/1


Part number: MRF19060
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 60 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 12.5/1990
Eff. (Typ) (%): 36
thetaJC (°C/W): 0.97
Die Technology: LDMOS
System Application: 2–CH N–CDMA
Package/Style: 465/1


Part number: MRF19060S
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 60 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 12.5/1990
Eff. (Typ) (%): 36
thetaJC (°C/W): 0.97
Die Technology: LDMOS
System Application: 2–CH N–CDMA
Package/Style: 465A/1


Part number: MRF19085
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 18 AVG
Test Signal: N–CDMA
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13/1990
Eff. (Typ) (%): 23
thetaJC (°C/W): 0.64
Die Technology: LDMOS
System Application: 2–CH N–CDMA
Package/Style: 465/1


Part number: MRF19085S
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 18 AVG
Test Signal: N–CDMA
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13/1990
Eff. (Typ) (%): 23
thetaJC (°C/W): 0.64
Die Technology: LDMOS
System Application: 2–CH N–CDMA
Package/Style: 465A/1


Part number: MRF19090
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 90 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 11.5/1990
Eff. (Typ) (%): 35
thetaJC (°C/W): 0.65
Die Technology: LDMOS
System Application: 2–CH N–CDMA
Package/Style: 465B/1


Part number: MRF19090S
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 90 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 11.5/1990
Eff. (Typ) (%): 35
thetaJC (°C/W): 0.65
Die Technology: LDMOS
System Application: 2–CH N–CDMA
Package/Style: 465C/1


Part number: MRF19120
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 120 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 11.7/1990
Eff. (Typ) (%): 34
thetaJC (°C/W): 0.45
Die Technology: LDMOS
System Application: 2–CH N–CDMA
Package/Style: 375D/2


Part number: MRF19120S
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 120 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 11.7/1990
Eff. (Typ) (%): 34
thetaJC (°C/W): 0.45
Die Technology: LDMOS
System Application: 2–CH N–CDMA
Package/Style: 375E/2


Part number: MRF19125
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 24 AVG
Test Signal: N-CDMA
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13.5/1990
Eff. (Typ) (%): 22
thetaJC (°C/W): 0.53
Die Technology: LDMOS
System Application: 2–CH N–CDMA
Package/Style: 465B/1


Part number: MRF19125S
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 1930-1990
Pout (Watts): 24 AVG
Test Signal: N-CDMA
Supply Voltage (Volts): 26
Class: AB
Gain–Typ/Freq. (dB/MHz): 13.5/1990
Eff. (Typ) (%): 22
thetaJC (°C/W): 0.53
Die Technology: LDMOS
System Application: 2–CH N–CDMA
Package/Style: 465C/1


Part number: MRF20030R
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2000
Pout (Watts): 30
Supply Voltage (Volts): 26
Class: AB
Gain–Min/Freq. (dB/MHz): 11/2000
thetaJC (°C/W): 1.4
Die Technology: Bipolar


Part number: MRF20060R
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2000
Pout (Watts): 60
Supply Voltage (Volts): 26
Class: AB
Gain–Min/Freq. (dB/MHz): 9.8/2000
thetaJC (°C/W): 0.7
Die Technology: Bipolar


Part number: MRF20060RS
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2000
Pout (Watts): 60
Supply Voltage (Volts): 26
Class: AB
Gain–Min/Freq. (dB/MHz): 9.8/2000
thetaJC (°C/W): 0.7
Die Technology: Bipolar


Part number: MRF21010
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 2110-2170
Pout (Watts): 10 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 13.5/2170
Eff. (Typ) (%): 35
thetaJC (°C/W): 5.5
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 360B/1


Part number: MRF21010S
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 2110-2170
Pout (Watts): 10 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 13.5/2170
Eff. (Typ) (%): 35
thetaJC (°C/W): 5.5
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 360C/1


Part number: MRF21030
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2110-2170
Pout (Watts): 30 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 13/2170
Eff. (Typ) (%): 33
thetaJC (°C/W): 2.1
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 465E/1


Part number: MRF21030S
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2110-2170
Pout (Watts): 30 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 13/2170
Eff. (Typ) (%): 33
thetaJC (°C/W): 2.1
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 465F/1


Part number: MRF21045
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2110-2170
Pout (Watts): 10 AVG
Test Signal: W-CDMA
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 15/2170
Eff. (Typ) (%): 23.5
thetaJC (°C/W): 1.65
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 465E/1


Part number: MRF21045S
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2110-2170
Pout (Watts): 10 AVG
Test Signal: W-CDMA
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 15/2170
Eff. (Typ) (%): 23.5
thetaJC (°C/W): 1.65
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 465F/1


Part number: MRF21060
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2110-2170
Pout (Watts): 60 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 12.5/2170
Eff. (Typ) (%): 34
thetaJC (°C/W): 1.02
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 465/1


Part number: MRF21060SR3
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2110-2170
Pout (Watts): 60 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 12.5/2170
Eff. (Typ) (%): 34
thetaJC (°C/W): 1.02
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 465A/1


Part number: MRF21085
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2110-2170
Pout (Watts): 19 AVG
Test Signal: W-CDMA
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 13.6/2170
Eff. (Typ) (%): 23
thetaJC (°C/W): 0.78
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 465/1


Part number: MRF21085S
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2110-2170
Pout (Watts): 19 AVG
Test Signal: W-CDMA
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 13.6/2170
Eff. (Typ) (%): 23
thetaJC (°C/W): 0.78
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 465A/1


Part number: MRF21090
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2110-2170
Pout (Watts): 90 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 11.7/2170
Eff. (Typ) (%): 33
thetaJC (°C/W): 0.65
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 465B/1


Part number: MRF21090S
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2110-2170
Pout (Watts): 90 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 11.7/2170
Eff. (Typ) (%): 33
thetaJC (°C/W): 0.65
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 465C/1


Part number: MRF21120
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2110-2170
Pout (Watts): 120 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 11.4/2170
Eff. (Typ) (%): 34.5
thetaJC (°C/W): 0.45
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 375D/2


Part number: MRF21120S
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2110-2170
Pout (Watts): 120 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 11.2/2170
Eff. (Typ) (%): 34.5
thetaJC (°C/W): 0.45
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 375E/2


Part number: MRF21125
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2110-2170
Pout (Watts): 20 AVG
Test Signal: W–CDMA
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 13/2170
Eff. (Typ) (%): 18
thetaJC (°C/W): 0.53
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 465B/1


Part number: MRF21125S
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2110-2170
Pout (Watts): 20 AVG
Test Signal: W–CDMA
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 13/2170
Eff. (Typ) (%): 18
thetaJC (°C/W): 0.53
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 465C/1


Part number: MRF21180
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2110-2170
Pout (Watts): 38 AVG
Test Signal: W–CDMA
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 12.1/2170
Eff. (Typ) (%): 22
thetaJC (°C/W): 0.46
Die Technology: LDMOS
System Application: 2–CH W–CDMA, UMTS
Package/Style: 375D/2


Part number: MRF21180S
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 2110-2170
Pout (Watts): 38 AVG
Test Signal: W-CDMA
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 12.1/2170
Eff. (Typ) (%): 22
thetaJC (°C/W): 0.46
Die Technology: LDMOS
System Application: 2-CH W-CDMA, UMTS
Package/Style: 375E/2


Part number: MRF275G
Package: 5.0
Min. Op. Freq. (MHz): 500.0
Max. Op. Freq. (MHz): 150.0
Pout (W): 10.0
Gain (dB): 50.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF275L
Package: 5.0
Min. Op. Freq. (MHz): 500.0
Max. Op. Freq. (MHz): 100.0
Pout (W): 8.8
Gain (dB): 55.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF281SR1
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 1930-2000
Pout (Watts): 4 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 26
Class: A, AB
Gain–Typ/Freq. (dB/MHz): 12.5/2000
Eff. (Typ) (%): 33
thetaJC (°C/W): 5.74
Die Technology: LDMOS
System Application: -
Package/Style: 458B/1


Part number: MRF281ZR1
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 1930-2000
Pout (Watts): 4 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 26
Class: A, AB
Gain–Typ/Freq. (dB/MHz): 12.5/2000
Eff. (Typ) (%): 33
thetaJC (°C/W): 5.74
Die Technology: LDMOS
System Application: -
Package/Style: 458C/1


Part number: MRF282SR1
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 1930-2000
Pout (Watts): 10 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 26
Class: A, AB
Gain–Typ/Freq. (dB/MHz): 11.5/2000
Eff. (Typ) (%): 28 (Min)
thetaJC (°C/W): 4.2
Die Technology: LDMOS
System Application: -
Package/Style: 458B/1


Part number: MRF282ZR1
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 1930-2000
Pout (Watts): 10 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 26
Class: A, AB
Gain–Typ/Freq. (dB/MHz): 11.5/2000
Eff. (Typ) (%): 28 (Min)
thetaJC (°C/W): 4.2
Die Technology: LDMOS
System Application: -
Package/Style: 458C/1


Part number: MRF284
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 1930-2000
Pout (Watts): 30 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 26
Class: A, AB
Gain–Typ/Freq. (dB/MHz): 10.5/2000
Eff. (Typ) (%): 35
thetaJC (°C/W): 2.0
Die Technology: LDMOS
System Application: -
Package/Style: 360B/1


Part number: MRF284SR1
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 1930-2000
Pout (Watts): 30 PEP
Test Signal: 2-Tone
Supply Voltage (Volts): 26
Class: A, AB
Gain–Typ/Freq. (dB/MHz): 10.5/2000
Eff. (Typ) (%): 35
thetaJC (°C/W): 2.0
Die Technology: LDMOS
System Application: -
Package/Style: 360C/1


Part number: MRF3104
Package: 1600.0
Min. Op. Freq. (MHz): 1640.0
Max. Op. Freq. (MHz): 0.5
Pout (W): 10.5
Gain (dB): -
Efficiency (%): 20.0
Vcc (V):


Part number: MRF313
Package: 100.0
Min. Op. Freq. (MHz): 400.0
Max. Op. Freq. (MHz): 1.0
Pout (W): 15.0
Gain (dB): 45.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF314
Package: 30.0
Min. Op. Freq. (MHz): 200.0
Max. Op. Freq. (MHz): 30.0
Pout (W): 10.0
Gain (dB): 50.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF316
Package: 30.0
Min. Op. Freq. (MHz): 200.0
Max. Op. Freq. (MHz): 80.0
Pout (W): 10.0
Gain (dB): 55.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF317
Package: 30.0
Min. Op. Freq. (MHz): 200.0
Max. Op. Freq. (MHz): 100.0
Pout (W): 9.0
Gain (dB): 55.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF321
Package: 150.0
Min. Op. Freq. (MHz): 400.0
Max. Op. Freq. (MHz): 10.0
Pout (W): 12.0
Gain (dB): 50.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF323
Package: 150.0
Min. Op. Freq. (MHz): 400.0
Max. Op. Freq. (MHz): 20.0
Pout (W): 10.0
Gain (dB): 50.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF327
Package: 225.0
Min. Op. Freq. (MHz): 400.0
Max. Op. Freq. (MHz): 80.0
Pout (W): 7.3
Gain (dB): 50.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF372
Matched/ UnMatched Frequency Band: M
Frequency Band (MHz): 470-860
Pout (Watts): 180 PEP
Supply Voltage (Volts): 32
Class: AB
Gain–Typ/Freq. (dB/MHz): 17/860
Eff. (Typ) (%): 36
thetaJC (°C/W): 0.5
IMD (dBc): -35
Die Technology: LDMOS
System Application: DTV Broadcast, GeneralCommunication Power Amplifiers 470 to 860 MHz
Package/Style: 375G/2


Part number: MRF373
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 470-1000
Pout (Watts): 60
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 14.7/860
Eff. (Typ) (%): 54
thetaJC (°C/W): 1.0
IMD (dBc): -
Die Technology: LDMOS
System Application: DTV Broadcast, GeneralCommunication Power Amplifiers 470 to 860 MHz
Package/Style: 360B/1


Part number: MRF373A
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 470-860
Pout (Watts): 75 CW
Supply Voltage (Volts): 32
Class: AB
Gain–Typ/Freq. (dB/MHz): 18.2/860
Eff. (Typ) (%): 60
thetaJC (°C/W): 0.89
IMD (dBc): -
Die Technology: LDMOS
System Application: DTV Broadcast, GeneralCommunication Power Amplifiers 470 to 860 MHz
Package/Style: 360B/1


Part number: MRF373AS
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 470-860
Pout (Watts): 75 CW
Supply Voltage (Volts): 32
Class: AB
Gain–Typ/Freq. (dB/MHz): 18.2/860
Eff. (Typ) (%): 60
thetaJC (°C/W): 0.63
IMD (dBc): -
Die Technology: LDMOS
System Application: DTV Broadcast, GeneralCommunication Power Amplifiers 470 to 860 MHz
Package/Style: 360C/1


Part number: MRF373S
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 470-1000
Pout (Watts): 60
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 14.7/860
Eff. (Typ) (%): 54
thetaJC (°C/W): 0.75
IMD (dBc): -
Die Technology: LDMOS
System Application: DTV Broadcast, GeneralCommunication Power Amplifiers 470 to 860 MHz
Package/Style: 360C/1


Part number: MRF374
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 470-1000
Pout (Watts): 100 PEP
Supply Voltage (Volts): 28
Class: AB
Gain–Typ/Freq. (dB/MHz): 13.5/860
Eff. (Typ) (%): 36
thetaJC (°C/W): 0.5
IMD (dBc): –31
Die Technology: LDMOS
System Application: DTV Broadcast, GeneralCommunication Power Amplifiers 470 to 860 MHz
Package/Style: 375F/2


Part number: MRF374A
Matched/ UnMatched Frequency Band: U
Frequency Band (MHz): 470-860
Pout (Watts): 130 PEP
Supply Voltage (Volts): 32
Class: AB
Gain–Typ/Freq. (dB/MHz): 17.3/860
Eff. (Typ) (%): 41
thetaJC (°C/W): 0.58
IMD (dBc): -31
Die Technology: LDMOS
System Application: DTV Broadcast, GeneralCommunication Power Amplifiers 470 to 860 MHz
Package/Style: 375F/2


Part number: MRF392
Package: 100.0
Min. Op. Freq. (MHz): 400.0
Max. Op. Freq. (MHz): 125.0
Pout (W): 10.0
Gain (dB): 55.0
Efficiency (%): 28.0
Vcc (V):


Part number: MRF393
Package: 100.0
Min. Op. Freq. (MHz): 500.0
Max. Op. Freq. (MHz): 100.0
Pout (W): 9.5
Gain (dB): 55.0
Efficiency (%): 28.0
Vcc (V):


 
 
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