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Semiconductors Parts begin by BF, Total parts = 484

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Part number: BF 1005
VDS (max) (V): 8
ID (max) (mA): 25
Ptot (max) (mW): 200
gfs (typ) (mS): 24
Gps (typ) (dB): 19
F (typ) (dB): 1.4
Cg1ss (typ) (pF): 2.1
Cdss (typ) (pF): 1.3
Delta Gps (typ) (dB): 50
Package: P-SOT-143 (SMD)

Part number: BF 1005S
VDS (max) (V): 8
ID (max) (mA): 25
Ptot (max) (mW): 200
gfs (typ) (mS): 30
Gps (typ) (dB): 19
F (typ) (dB): 1.6
Cg1ss (typ) (pF): 2.4
Cdss (typ) (pF): 1.3
Delta Gps (typ) (dB): 50
Package: P-SOT-143 (SMD)

Part number: BF 1009S
VDS (max) (V): 12
ID (max) (mA): 25
Ptot (max) (mW): 200
gfs (typ) (mS): 30
Gps (typ) (dB): 22
F (typ) (dB): 1.4
Cg1ss (typ) (pF): 2.1
Cdss (typ) (pF): 0.9
Delta Gps (typ) (dB): 50
Package: P-SOT-143 (SMD)

Part number: BF 1009SW
VDS (max) (V): 12
ID (max) (mA): 25
Ptot (max) (mW): 200
gfs (typ) (mS): 30
Gps (typ) (dB): 22
F (typ) (dB): 1.4
Cg1ss (typ) (pF): 2.1
Cdss (typ) (pF): 0.9
Delta Gps (typ) (dB): 50
Package: P-SOT-343 (SMD)

Part number: BF 1012S
VDS (max) (V): 16
ID (max) (mA): 25
Ptot (max) (mW): 200
gfs (typ) (mS): 30
Gps (typ) (dB): 22
F (typ) (dB): 1.4
Cg1ss (typ) (pF): 2.1
Cdss (typ) (pF): 0.9
Delta Gps (typ) (dB): 50
Package: P-SOT-143 (SMD)

Part number: BF 2030
VDS (max) (V): 8
ID (max) (mA): 20
Ptot (max) (mW): 200
gfs (typ) (mS): 31
Gps (typ) (dB): 23
F (typ) (dB): 1.5
Cg1ss (typ) (pF): 2.4
Cdss (typ) (pF): 1.3
Delta Gps (typ) (dB): 50
Package: P-SOT-143 (SMD)

Part number: BF 2030W
VDS (max) (V): 8
ID (max) (mA): 20
Ptot (max) (mW): 200
gfs (typ) (mS): 31
Gps (typ) (dB): 23
F (typ) (dB): 1.5
Cg1ss (typ) (pF): 2.4
Cdss (typ) (pF): 1.3
Delta Gps (typ) (dB): 50
Package: P-SOT-343 (SMD)

Part number: BF 2040
VDS (max) (V): 8
ID (max) (mA): 20
Ptot (max) (mW): 200
gfs (typ) (mS): 42
Gps (typ) (dB): 23
F (typ) (dB): 1.6
Cg1ss (typ) (pF): 2.9
Cdss (typ) (pF): 1.6
Delta Gps (typ) (dB): 50
Package: P-SOT-143 (SMD)

Part number: BF 2040W
VDS (max) (V): 8
ID (max) (mA): 20
Ptot (max) (mW): 200
gfs (typ) (mS): 42
Gps (typ) (dB): 23
F (typ) (dB): 1.6
Cg1ss (typ) (pF): 2.9
Cdss (typ) (pF): 1.6
Delta Gps (typ) (dB): 50
Package: P-SOT-343 (SMD)

Part number: BF 998
VDS (max) (V): 12
ID (max) (mA): 30
Ptot (max) (mW): 200
gfs (typ) (mS): 24
Gps (typ) (dB): 20
F (typ) (dB): 1
Cg1ss (typ) (pF): 2.1
Cdss (typ) (pF): 1.1
Delta Gps (typ) (dB): 0
Package: P-SOT-143 (SMD)

Part number: BF 998W
VDS (max) (V): 12
ID (max) (mA): 30
Ptot (max) (mW): 200
gfs (typ) (mS): 24
Gps (typ) (dB): 20
F (typ) (dB): 1
Cg1ss (typ) (pF): 2.1
Cdss (typ) (pF): 1.1
Delta Gps (typ) (dB): 40
Package: P-SOT-343 (SMD)

Part number: BF 999
VDS (max) (V): 20
ID (max) (mA): 30
Ptot (max) (mW): 200
gfs (typ) (mS): 16
Gps (typ) (dB): 25
F (typ) (dB): 1
Cg1ss (typ) (pF): 2.5
Cdss (typ) (pF): 1
Delta Gps (typ) (dB): 0
Package: P-SOT-23 (SMD)

Part number: BF1005R
VDS (max) (V): 5
ID (max) (mA): 0
Ptot (max) (mW): 0
gfs (typ) (mS): 24
Gps (typ) (dB): 19
F (typ) (dB): 1.4
Cg1ss (typ) (pF): 0
Cdss (typ) (pF): 0
Delta Gps (typ) (dB): 0
Package: P-SOT-143-R (SMD)

Part number: BF1005SR
VDS (max) (V): 5
ID (max) (mA): 0
Ptot (max) (mW): 0
gfs (typ) (mS): 30
Gps (typ) (dB): 20
F (typ) (dB): 1.4
Cg1ss (typ) (pF): 0
Cdss (typ) (pF): 0
Delta Gps (typ) (dB): 0
Package: P-SOT-143-R (SMD)

Part number: BF1009SR
VDS (max) (V): 9
ID (max) (mA): 0
Ptot (max) (mW): 0
gfs (typ) (mS): 30
Gps (typ) (dB): 22
F (typ) (dB): 1.4
Cg1ss (typ) (pF): 0
Cdss (typ) (pF): 0
Delta Gps (typ) (dB): 0
Package: P-SOT-143-R (SMD)

Part number: BF1012SR
VDS (max) (V): 12
ID (max) (mA): 0
Ptot (max) (mW): 0
gfs (typ) (mS): 30
Gps (typ) (dB): 22
F (typ) (dB): 1.4
Cg1ss (typ) (pF): 0
Cdss (typ) (pF): 0
Delta Gps (typ) (dB): 0
Package: P-SOT-143-R (SMD)

Part number: BF1100
Description: Dual-gate MOS-FETs

Part number: BF1100R
Description: Dual-gate MOS-FETs

Part number: BF1100WR
Description: Dual-gate MOS-FET

Part number: BF1101
Description: N-channel dual-gate MOS-FETs

Part number: BF1101R
Description: N-channel dual-gate MOS-FETs

Part number: BF1101WR
Description: N-channel dual-gate MOS-FETs

Part number: BF1102
Description: Dual N-channel dual gate MOS-FETs

Part number: BF1102R
Description: Dual N-channel dual gate MOS-FETs

Part number: BF1105
Description: N-channel dual-gate MOS-FETs

Part number: BF1105R
Description: N-channel dual-gate MOS-FETs

Part number: BF1105WR
Description: N-channel dual-gate MOS-FETs

Part number: BF1107
Description: N-channel single gate MOS-FETs

Part number: BF1108
Description: Silicon RF switches

Part number: BF1108R
Description: Silicon RF switches

Part number: BF1109
Description: N-channel dual-gate MOS-FETs

Part number: BF1109R
Description: N-channel dual-gate MOS-FETs

Part number: BF1109WR
Description: N-channel dual-gate MOS-FETs

Part number: BF1201
Description: N-channel dual-gate PoLo MOS-FETs

Part number: BF1201R
Description: N-channel dual-gate PoLo MOS-FETs

Part number: BF1201WR
Description: N-channel dual-gate PoLo MOS-FETs

Part number: BF1202
Description: N-channel dual-gate PoLo MOS-FETs

Part number: BF1202R
Description: N-channel dual-gate PoLo MOS-FETs

Part number: BF1202WR
Description: N-channel dual-gate PoLo MOS-FETs

Part number: BF1203
Description: Dual N-channel dual gate MOS-FET

Part number: BF1204
Description: Dual N-channel dual gate MOS-FET

Part number: BF199
Description: NPN medium frequency transistor

Part number: BF2030R
VDS (max) (V): 8
ID (max) (mA): 20
Ptot (max) (mW): 200
gfs (typ) (mS): 31
Gps (typ) (dB): 23
F (typ) (dB): 1.5
Cg1ss (typ) (pF): 2.4
Cdss (typ) (pF): 1.3
Delta Gps (typ) (dB): 50
Package: P-SOT-143-R (SMD)

Part number: BF2040R
VDS (max) (V): 8
ID (max) (mA): 20
Ptot (max) (mW): 200
gfs (typ) (mS): 42
Gps (typ) (dB): 23
F (typ) (dB): 1.6
Cg1ss (typ) (pF): 2.9
Cdss (typ) (pF): 1.6
Delta Gps (typ) (dB): 50
Package: P-SOT-143-R (SMD)

Part number: BF240
Description: NPN medium frequency transistor

Part number: BF245A
Description: N-channel silicon field-effect transistors

Part number: BF245B
Description: N-channel silicon field-effect transistors

Part number: BF245C
Description: N-channel silicon field-effect transistors

Part number: BF257
VCEO (V): 160
hFE min @ IC: 25
hFE max @ IC: -
IC (hFE) (mA): 30
VCE(sat) max @ IC/IB (V): 1
IC (VCE(sat) max) (mA): 30
IB (VCE(sat) max) (mA): 6
fT min (MHz): -
Ptot (mW): 1000
Package: TO-39

Part number: BF257CSM4
Package: LCC3
Polarity: NPN
VCEO: 160V
IC(cont): 0.1A
HFE(min): 25
HFE(max): -
@ VCE/IC: 10V, 30mA
FT: 90MHz
PD: 400mW

Part number: BF258
VCEO (V): 250
hFE min @ IC: 25
hFE max @ IC: -
IC (hFE) (mA): 30
VCE(sat) max @ IC/IB (V): 1
IC (VCE(sat) max) (mA): 30
IB (VCE(sat) max) (mA): 6
fT min (MHz): -
Ptot (mW): 1000
Package: TO-39

Part number: BF258CSM4
Package: LCC3
Polarity: NPN
VCEO: 250V
IC(cont): 0.1A
HFE(min): 25
HFE(max): -
@ VCE/IC: 10V, 30mA
FT: 90MHz
PD: 400mW

Part number: BF259
VCEO (V): 300
hFE min @ IC: 25
hFE max @ IC: -
IC (hFE) (mA): 30
VCE(sat) max @ IC/IB (V): 1
IC (VCE(sat) max) (mA): 30
IB (VCE(sat) max) (mA): 6
fT min (MHz): -
Ptot (mW): 1000
Package: TO-39

Part number: BF259CSM4
Package: LCC3
Polarity: NPN
VCEO: 300V
IC(cont): 0.1A
HFE(min): 25
HFE(max): -
@ VCE/IC: 10V, 30mA
FT: 90MHz
PD: 400mW

Part number: BF259L
Package: TO5
Polarity: NPN
VCEO: 300V
IC(cont): 0.1A
HFE(min): 25
HFE(max): -
@ VCE/IC: 10V, 30mA
FT: 90MHz
PD: 800mW

Part number: BF324
Description: PNP medium frequency transistor

Part number: BF337
Package: TO39
Polarity: NPN
VCEO: 200V
IC(cont): 0.1A
HFE(min): 20
HFE(max): -
@ VCE/IC: 10V, 30mA
FT: 80MHz
PD: 3W

Part number: BF338
Package: TO39
Polarity: NPN
VCEO: 225V
IC(cont): 0.1A
HFE(min): 20
HFE(max): -
@ VCE/IC: 10V, 30mA
FT: 80MHz
PD: 3W

Part number: BF3510TV
Voltage max (V): 1000
Current (A): 35
VF max @ rated current (V): 1.3
IR max @ 25°C (µA): 10
IFSM (A): 300
Tj max (°C): 150
Package: ISOTOP

Part number: BF355
Package: TO39
Polarity: NPN
VCEO: 225V
IC(cont): 0.1A
HFE(min): 20
HFE(max): -
@ VCE/IC: 30V, 80mA
FT: 80MHz
PD: 800mW

Part number: BF370
Description: NPN medium frequency transistor

Part number: BF393
Description: Transistor Silicon Plastic NPN
Packing: -
Type: -
V(BR)CEO Min(V): 300
V(BR)CEO Typ(V): -
V(BR)CBO Typ(V): -
VBE(sat) Max(V): -
VCE(sat) Max(V): .2
td(on) Max(ns): -
td(off) Max(ns): -
IC Max(mA): 500
fT Min(MHz): 50
fT Typ(MHz): -
hFE Min: 40
hFE Max: -
F(bar) Max: -
Polarity: NPN
Package: TO-226AE

Part number: BF393ZL1
Description: Transistor Silicon Plastic NPN
Packing: Tape and Ammunition Box
Type: -
V(BR)CEO Min(V): 300
V(BR)CEO Typ(V): -
V(BR)CBO Typ(V): -
VBE(sat) Max(V): -
VCE(sat) Max(V): .2
td(on) Max(ns): -
td(off) Max(ns): -
IC Max(mA): 500
fT Min(MHz): 50
fT Typ(MHz): -
hFE Min: 40
hFE Max: -
F(bar) Max: -
Polarity: NPN
Package: TO-226AE

Part number: BF420
Description: NPN high-voltage transistors

Part number: BF420RL1
Description: Silicon Plastic Transistor
Packing: Tape and Reel
Type: -
V(BR)CEO Min(V): -
V(BR)CEO Typ(V): -
V(BR)CBO Typ(V): -
VBE(sat) Max(V): -
VCE(sat) Max(V): -
td(on) Max(ns): -
td(off) Max(ns): -
IC Max(mA): -
fT Min(MHz): -
fT Typ(MHz): -
hFE Min: -
hFE Max: -
F(bar) Max: -
Polarity: -
Package: -

Part number: BF420ZL1
Description: Silicon Plastic Transistor
Packing: Tape and Ammunition Box
Type: -
V(BR)CEO Min(V): -
V(BR)CEO Typ(V): -
V(BR)CBO Typ(V): -
VBE(sat) Max(V): -
VCE(sat) Max(V): -
td(on) Max(ns): -
td(off) Max(ns): -
IC Max(mA): -
fT Min(MHz): -
fT Typ(MHz): -
hFE Min: -
hFE Max: -
F(bar) Max: -
Polarity: -
Package: -

Part number: BF421
Description: PNP high-voltage transistors

Part number: BF421L
Description: PNP high-voltage transistors

Part number: BF421ZL1
Description: Silicon Plastic Transistor
Packing: Tape and Ammunition Box
Type: -
V(BR)CEO Min(V): -
V(BR)CEO Typ(V): -
V(BR)CBO Typ(V): -
VBE(sat) Max(V): -
VCE(sat) Max(V): -
td(on) Max(ns): -
td(off) Max(ns): -
IC Max(mA): -
fT Min(MHz): -
fT Typ(MHz): -
hFE Min: -
hFE Max: -
F(bar) Max: -
Polarity: -
Package: -

Part number: BF422
Package: TO-92
VCBO (V): -250
VCEO (V): -250
IC (mA): -100
PC (mW): 625
hFE: 50~
VCE (V): -20
IC (mA): -25
VCE(sat) (V)max: -0.6
IC (mA): -30
IB (mA): -5

Part number: BF422L
Description: NPN high-voltage transistor

Part number: BF422RL1
Description: Transistor Silicon Plastic NPN
Packing: Tape and Reel
Type: -
V(BR)CEO Min(V): 250
V(BR)CEO Typ(V): -
V(BR)CBO Typ(V): -
VBE(sat) Max(V): -
VCE(sat) Max(V): 2
td(on) Max(ns): -
td(off) Max(ns): -
IC Max(mA): 500
fT Min(MHz): 60
fT Typ(MHz): -
hFE Min: 50
hFE Max: -
F(bar) Max: -
Polarity: NPN
Package: TO-226AA, (TO-92)

Part number: BF422ZL1
Description: Transistor Silicon Plastic NPN
Packing: Tape and Ammunition Box
Type: -
V(BR)CEO Min(V): 250
V(BR)CEO Typ(V): -
V(BR)CBO Typ(V): -
VBE(sat) Max(V): -
VCE(sat) Max(V): 2
td(on) Max(ns): -
td(off) Max(ns): -
IC Max(mA): 500
fT Min(MHz): 60
fT Typ(MHz): -
hFE Min: 50
hFE Max: -
F(bar) Max: -
Polarity: NPN
Package: TO-226AA, (TO-92)

Part number: BF423
Package: TO-92
VCBO (V): 250
VCEO (V): 250
IC (mA): 100
PC (mW): 625
hFE: 50-
VCE (V): 20
IC (mA): 25
VCE(sat) (V)max: 0.6
IC (mA): 30
IB (mA): 5

Part number: BF423L
Description: PNP high-voltage transistors

Part number: BF423ZL1
Description: Transistor Silicon Plastic PNP
Packing: Tape and Ammunition Box
Type: -
V(BR)CEO Min(V): 250
V(BR)CEO Typ(V): -
V(BR)CBO Typ(V): -
VBE(sat) Max(V): -
VCE(sat) Max(V): 2
td(on) Max(ns): -
td(off) Max(ns): -
IC Max(mA): 500
fT Min(MHz): 60
fT Typ(MHz): -
hFE Min: 50
hFE Max: -
F(bar) Max: -
Polarity: PNP
Package: TO-226AA, (TO-92)

Part number: BF450
Description: PNP medium frequency transistor

Part number: BF457
VCEO (V): 160
VCBO (V): 160
VCES (V): 160
IC (A): 0.3
Ptot (W): 12.5
Package: SOT-32
VCE(sat) @ IC/IB (V): 1
IC (VCE(sat)) (mA): 50
IB (VCE(sat)) (mA): 10

Part number: BF458
VCEO (V): 250
VCBO (V): 250
VCES (V): 250
IC (A): 0.3
Ptot (W): 12.5
Package: SOT-32
VCE(sat) @ IC/IB (V): 1
IC (VCE(sat)) (mA): 50
IB (VCE(sat)) (mA): 10

Part number: BF459
VCEO (V): 300
VCBO (V): 300
VCES (V): 300
IC (A): 0.3
Ptot (W): 12.5
Package: SOT-32
VCE(sat) @ IC/IB (V): 1
IC (VCE(sat)) (mA): 50
IB (VCE(sat)) (mA): 10

Part number: BF483
Description: NPN high-voltage transistors

Part number: BF485
Description: NPN high-voltage transistors

Part number: BF485PN
Description: NPN/PNP high voltage transistors

Part number: BF487
Description: NPN high-voltage transistors

Part number: BF488
Description: PNP high-voltage transistor

Part number: BF493S
Description: Transistor Silicon Plastic PNP
Packing: -
Type: -
V(BR)CEO Min(V): 350
V(BR)CEO Typ(V): -
V(BR)CBO Typ(V): -
VBE(sat) Max(V): -
VCE(sat) Max(V): 20
td(on) Max(ns): -
td(off) Max(ns): -
IC Max(mA): 500
fT Min(MHz): 50
fT Typ(MHz): -
hFE Min: 40
hFE Max: -
F(bar) Max: -
Polarity: PNP
Package: TO-226AE

Part number: BF493SRL1
Description: Transistor Silicon Plastic PNP
Packing: Tape and Reel
Type: -
V(BR)CEO Min(V): 350
V(BR)CEO Typ(V): -
V(BR)CBO Typ(V): -
VBE(sat) Max(V): -
VCE(sat) Max(V): 20
td(on) Max(ns): -
td(off) Max(ns): -
IC Max(mA): 500
fT Min(MHz): 50
fT Typ(MHz): -
hFE Min: 40
hFE Max: -
F(bar) Max: -
Polarity: PNP
Package: TO-226AE

Part number: BF493SZL1
Description: Transistor Silicon Plastic PNP
Packing: Tape and Ammunition Box
Type: -
V(BR)CEO Min(V): 350
V(BR)CEO Typ(V): -
V(BR)CBO Typ(V): -
VBE(sat) Max(V): -
VCE(sat) Max(V): 20
td(on) Max(ns): -
td(off) Max(ns): -
IC Max(mA): 500
fT Min(MHz): 50
fT Typ(MHz): -
hFE Min: 40
hFE Max: -
F(bar) Max: -
Polarity: PNP
Package: TO-226AE

Part number: BF510
Description: N-channel silicon field-effect transistors

Part number: BF511
Description: N-channel silicon field-effect transistors

Part number: BF512
Description: N-channel silicon field-effect transistors

Part number: BF513
Description: N-channel silicon field-effect transistors

Part number: BF517
Polarity: NPN
VCEO (max) (V): 15
IC (max) (mA): 25
Ptot (max) (mW): 280
fT (typ) (GHz): 2
F (typ) (dB): 2.5
Gma / Gms (typ) (dB): 0
|S21|² (typ) (dB): 0
IP3o (typ) (dBm): 0
P1dB (typ) (dBm): 0
Package: P-SOT-23 (SMD)