Part number: BF543
VDS (max) (V): 20
ID (max) (mA): 30
Ptot (max) (mW): 200
gfs (typ) (mS): 12
Gps (typ) (dB): 22
F (typ) (dB): 1
Cg1ss (typ) (pF): 2.7
Cdss (typ) (pF): 0.9
Delta Gps (typ) (dB): 0
Package: P-SOT-23 (SMD)
|
Part number: BF545A
Description: N-channel silicon junction field-effect transistors
|
Part number: BF545B
Description: N-channel silicon junction field-effect transistors
|
Part number: BF545C
Description: N-channel silicon junction field-effect transistors
|
Part number: BF547
Description: NPN 1 GHz wideband transistor
|
Part number: BF547W
Description: NPN 1 GHz wideband transistor
|
Part number: BF550
Description: PNP medium frequency transistor
|
Part number: BF556A
Description: N-channel silicon junction field-effect transistors
|
Part number: BF556B
Description: N-channel silicon junction field-effect transistors
|
Part number: BF556C
Description: N-channel silicon junction field-effect transistors
|
Part number: BF569
Marking: LH
VCEO (V): 35
IC max (mA): 30
P tot@T amb [mW][°C]: 200@60
hFE@ICE @VCE [mA][V]: 60@3@10
fT@I C@V CE [MHz] [mA] [V]: 1000@3@10
Ccb@VCB@ f [pF][V] [MHz]: 0.3@10@
F@f@IC [dB] [MHz][mA]: 4.2@800@3
|
Part number: BF569R
Marking: LM
VCEO (V): 35
IC max (mA): 30
P tot@T amb [mW][°C]: 200@60
hFE@ICE @VCE [mA][V]: 60@3@10
fT@I C@V CE [MHz] [mA] [V]: 1000@3@10
Ccb@VCB@ f [pF][V] [MHz]: 0.3@10@
F@f@IC [dB] [MHz][mA]: 4.2@800@3
|
Part number: BF570
Description: NPN medium frequency transistor
|
Part number: BF579
Marking: G7
VCEO (V): 20
IC max (mA): 25
P tot@T amb [mW][°C]: 200@60
hFE@ICE @VCE [mA][V]: 50@10@10
fT@I C@V CE [MHz] [mA] [V]: 1750@10@10
Ccb@VCB@ f [pF][V] [MHz]: 0.55@10@
F@f@IC [dB] [MHz][mA]: 3.4@800@10
|
Part number: BF579R
Marking: GG
VCEO (V): 20
IC max (mA): 25
P tot@T amb [mW][°C]: 200@60
hFE@ICE @VCE [mA][V]: 50@10@10
fT@I C@V CE [MHz] [mA] [V]: 1750@10@10
Ccb@VCB@ f [pF][V] [MHz]: 0.55@10@
F@f@IC [dB] [MHz][mA]: 3.4@800@10
|
Part number: BF620
Description: NPN high-voltage transistors
|
Part number: BF621
Description: PNP high-voltage transistors
|
Part number: BF622
Description: NPN high-voltage transistors
|
Part number: BF623
Description: PNP high-voltage transistors
|
Part number: BF720
Description: NPN high-voltage transistors
|
Part number: BF722
Description: NPN high-voltage transistors
|
Part number: BF723
Description: PNP high-voltage transistor
|
Part number: BF747
Description: NPN 1 GHz wideband transistor
|
Part number: BF770A
Polarity: NPN
VCEO (max) (V): 12
IC (max) (mA): 50
Ptot (max) (mW): 300
fT (typ) (GHz): 6
F (typ) (dB): 3.3
Gma / Gms (typ) (dB): 8.5
|S21|² (typ) (dB): 6.5
IP3o (typ) (dBm): 0
P1dB (typ) (dBm): 0
Package: P-SOT-23 (SMD)
|
Part number: BF771
Polarity: NPN
VCEO (max) (V): -
IC (max) (mA): -
Ptot (max) (mW): -
fT (typ) (GHz): -
F (typ) (dB): -
Gma / Gms (typ) (dB): -
|S21|² (typ) (dB): -
IP3o (typ) (dBm): -
P1dB (typ) (dBm): -
Package: -
|
Part number: BF771W
Polarity: NPN
VCEO (max) (V): -
IC (max) (mA): -
Ptot (max) (mW): -
fT (typ) (GHz): -
F (typ) (dB): -
Gma / Gms (typ) (dB): -
|S21|² (typ) (dB): -
IP3o (typ) (dBm): -
P1dB (typ) (dBm): -
Package: -
|
Part number: BF772
Polarity: NPN
VCEO (max) (V): 12
IC (max) (mA): 80
Ptot (max) (mW): 580
fT (typ) (GHz): 8
F (typ) (dB): 2.1
Gma / Gms (typ) (dB): 11.5
|S21|² (typ) (dB): 8.5
IP3o (typ) (dBm): 0
P1dB (typ) (dBm): 0
Package: P-SOT-143 (SMD)
|
Part number: BF775
Polarity: NPN
VCEO (max) (V): 15
IC (max) (mA): 30
Ptot (max) (mW): 280
fT (typ) (GHz): 5.5
F (typ) (dB): 1.6
Gma / Gms (typ) (dB): 10.5
|S21|² (typ) (dB): 7.5
IP3o (typ) (dBm): 0
P1dB (typ) (dBm): 0
Package: P-SOT-23 (SMD)
|
Part number: BF799
Polarity: NPN
VCEO (max) (V): 20
IC (max) (mA): 35
Ptot (max) (mW): 280
fT (typ) (GHz): 1.1
F (typ) (dB): 3
Gma / Gms (typ) (dB): 0
|S21|² (typ) (dB): 0
IP3o (typ) (dBm): 0
P1dB (typ) (dBm): 0
Package: P-SOT-23 (SMD)
|
Part number: BF799W
Polarity: NPN
VCEO (max) (V): 20
IC (max) (mA): 35
Ptot (max) (mW): 280
fT (typ) (GHz): 1.1
F (typ) (dB): 3
Gma / Gms (typ) (dB): 0
|S21|² (typ) (dB): 0
IP3o (typ) (dBm): 0
P1dB (typ) (dBm): 0
Package: P-SOT-323 (SMD)
|
Part number: BF820
Description: NPN high voltage transistors
|
Part number: BF820W
Description: NPN high-voltage transistors
|
Part number: BF821
Description: PNP high voltage transistors
|
Part number: BF822
Description: NPN high voltage transistors
|
Part number: BF823
Description: PNP high voltage transistors
|
Part number: BF824
Description: PNP medium frequency transistor
|
Part number: BF824W
Description: PNP medium frequency transistor
|
Part number: BF840
Description: NPN medium frequency transistor
|
Part number: BF861A
Description: N-channel junction FETs
|
Part number: BF861B
Description: N-channel junction FETs
|
Part number: BF861C
Description: N-channel junction FETs
|
Part number: BF862
Description: N-channel junction FET
|
Part number: BF901
Description: Silicon n-channel dual gate MOS-FETs
|
Part number: BF901R
Description: Silicon n-channel dual gate MOS-FETs
|
Part number: BF904
Description: N-channel dual gate MOS-FETs
|
Part number: BF904R
Description: N-channel dual gate MOS-FETs
|
Part number: BF904WR
Description: N-channel dual-gate MOS-FET
|
Part number: BF908
Description: Dual-gate MOS-FETs
|
Part number: BF908R
Description: Dual-gate MOS-FETs
|
Part number: BF908WR
Description: N-channel dual-gate MOS-FET
|
Part number: BF909
Description: N-channel dual gate MOS-FETs
|
Part number: BF909R
Description: N-channel dual gate MOS-FETs
|
Part number: BF909WR
Description: N-channel dual-gate MOS-FET
|
Part number: BF961
Marking: BF961
VDS (V): 20
ID max (mA): 30
P tot@T amb [mW] [°C]: 200@60
|y21s|@I DS [mS]: 15@10
Gps (dB): 20
F@f [dB] [MHz]: 1.8@200
Cissg1 (pF): 3.7
C oss@f@I DSP@V DS [pF][MHz] [mA][V]: 1.6@1@4 to 20@15
|
Part number: BF964S
Marking: BF964S
VDS (V): 20
ID max (mA): 30
P tot@T amb [mW] [°C]: 200@60
|y21s|@I DS [mS]: 18.5@10
Gps (dB): 25
F@f [dB] [MHz]: 1.0@200
Cissg1 (pF): 2.5
C oss@f@I DSP@V DS [pF][MHz] [mA][V]: 1.0@1@4 to 18@15
|
Part number: BF966S
Marking: BF966S
VDS (V): 20
ID max (mA): 30
P tot@T amb [mW] [°C]: 200@60
|y21s|@I DS [mS]: 18.5@10
Gps (dB): 18
F@f [dB] [MHz]: 1.8@800
Cissg1 (pF): 2.2
C oss@f@I DSP@V DS [pF][MHz] [mA][V]: 0.8@1@4 to 18@15
|
Part number: BF970
Marking: BF970
VCEO (V): 35
IC max (mA): 30
P tot@T amb [mW][°C]: 300@60
hFE@ICE @VCE [mA][V]: 60@3@10
fT@I C@V CE [MHz] [mA] [V]: 1000@3@10
Ccb@VCB@ f [pF][V] [MHz]: 0.4@10@
F@f@IC [dB] [MHz][mA]: 4.2@800@3
|
Part number: BF979
Marking: BF979
VCEO (V): 20
IC max (mA): 50
P tot@T amb [mW][°C]: 300@60
hFE@ICE @VCE [mA][V]: 50@10@10
fT@I C@V CE [MHz] [mA] [V]: 1750@10@10
Ccb@VCB@ f [pF][V] [MHz]: 0.6@10@
F@f@IC [dB] [MHz][mA]: 3.4@800@10
|
Part number: BF988
Marking: BF988
VDS (V): 12
ID max (mA): 30
P tot@T amb [mW] [°C]: 200@60
|y21s|@I DS [mS]: 24@10
Gps (dB): 20
F@f [dB] [MHz]: 1.6@800
Cissg1 (pF): 2.1
C oss@f@I DSP@V DS [pF][MHz] [mA][V]: 1.05@1@4 to 18@8
|
Part number: BF989
Description: N-channel dual-gate MOS-FET
|
Part number: BF991
Description: N-channel dual-gate MOS-FET
|
Part number: BF992
Description: Silicon N-channel dual gate MOS-FET
|
Part number: BF994S
Description: N-channel dual-gate MOS-FET
|
Part number: BF995
Marking: MB
VDS (V): 20
ID max (mA): 30
P tot@T amb [mW] [°C]: 200@60
|y21s|@I DS [mS]: 15@10
Gps (dB): 20
F@f [dB] [MHz]: 1.8@200
Cissg1 (pF): 3.7
C oss@f@I DSP@V DS [pF][MHz] [mA][V]: 1.6@1@4 to 18@15
|
Part number: BF996S
Description: N-channel dual-gate MOS-FET
|
Part number: BF998
Description: Silicon N-channel dual-gate MOS-FETs
|
Part number: BF998R
VDS (max) (V): 8
ID (max) (mA): 0
Ptot (max) (mW): 0
gfs (typ) (mS): 24
Gps (typ) (dB): 28
F (typ) (dB): 1
Cg1ss (typ) (pF): 0
Cdss (typ) (pF): 0
Delta Gps (typ) (dB): 0
Package: P-SOT-143-R (SMD)
|
Part number: BF998RW
Marking: WMO
VDS (V): 12
ID max (mA): 30
P tot@T amb [mW] [°C]: 200@60
|y21s|@I DS [mS]: 24@10
Gps (dB): 20
F@f [dB] [MHz]: 1.5@800
Cissg1 (pF): 2.1
C oss@f@I DSP@V DS [pF][MHz] [mA][V]: 1.05@1@4 to 18@8
|
Part number: BF998WR
Description: N-channel dual-gate MOS-FET
|
Part number: BFC505
Description: NPN wideband cascode transistor
|
Part number: BFC520
Description: NPN wideband cascode transistor
|
Part number: BFE505
Description: NPN wideband differential transistor
|
Part number: BFE520
Description: NPN wideband differential transistor
|
Part number: BFG10
Description: NPN 2 GHz RF power transistor
|
Part number: BFG10W
Description: UHF power transistor
|
Part number: BFG11
Description: NPN 2 GHz RF power transistor
|
Part number: BFG11W
Description: NPN 2 GHz power transistor
|
Part number: BFG135
Description: NPN 7GHz wideband transistor
|
Part number: BFG135A
Polarity: NPN
VCEO (max) (V): 15
IC (max) (mA): 150
Ptot (max) (mW): 1000
fT (typ) (GHz): 6
F (typ) (dB): 3.7
Gma / Gms (typ) (dB): 9
|S21|² (typ) (dB): 4
IP3o (typ) (dBm): 38
P1dB (typ) (dBm): 0
Package: P-SOT-223 (SMD)
|
Part number: BFG16A
Description: NPN 2 GHz wideband transistor
|
Part number: BFG193
Polarity: NPN
VCEO (max) (V): -
IC (max) (mA): 30
Ptot (max) (mW): -
fT (typ) (GHz): -
F (typ) (dB): -
Gma / Gms (typ) (dB): -
|S21|² (typ) (dB): -
IP3o (typ) (dBm): -
P1dB (typ) (dBm): -
Package: -
|
Part number: BFG196
Polarity: NPN
VCEO (max) (V): 12
IC (max) (mA): 100
Ptot (max) (mW): 800
fT (typ) (GHz): 7.5
F (typ) (dB): 1.5
Gma / Gms (typ) (dB): 14
|S21|² (typ) (dB): 11.5
IP3o (typ) (dBm): 0
P1dB (typ) (dBm): 0
Package: P-SOT-223 (SMD)
|
Part number: BFG198
Description: NPN 8 GHz wideband transistor
|
Part number: BFG19S
Polarity: NPN
VCEO (max) (V): 15
IC (max) (mA): 100
Ptot (max) (mW): 1000
fT (typ) (GHz): 5.5
F (typ) (dB): 2.5
Gma / Gms (typ) (dB): 13.5
|S21|² (typ) (dB): 11
IP3o (typ) (dBm): 35
P1dB (typ) (dBm): 0
Package: P-SOT-223 (SMD)
|
Part number: BFG21W
Description: UHF power transistor
|
Part number: BFG235
Polarity: NPN
VCEO (max) (V): 15
IC (max) (mA): 300
Ptot (max) (mW): 2000
fT (typ) (GHz): 5.5
F (typ) (dB): 2.7
Gma / Gms (typ) (dB): 12
|S21|² (typ) (dB): 6
IP3o (typ) (dBm): 40
P1dB (typ) (dBm): 0
Package: P-SOT-223 (SMD)
|
Part number: BFG25A
Description: NPN 5 GHz wideband transistor
|
Part number: BFG31
Description: PNP 5 GHz wideband transistor
|
Part number: BFG35
Description: NPN 4 GHz wideband transistor
|
Part number: BFG403W
Description: NPN 17 GHz wideband transistor
|
Part number: BFG410W
Description: NPN 22 GHz wideband transistor
|
Part number: BFG425W
Description: NPN 25 GHz wideband transistor
|
Part number: BFG480W
Description: NPN wideband transistor
|
